KR101138429B1 - 박막 트랜지스터 기판 및 그 제조방법 - Google Patents

박막 트랜지스터 기판 및 그 제조방법 Download PDF

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Publication number
KR101138429B1
KR101138429B1 KR1020050066864A KR20050066864A KR101138429B1 KR 101138429 B1 KR101138429 B1 KR 101138429B1 KR 1020050066864 A KR1020050066864 A KR 1020050066864A KR 20050066864 A KR20050066864 A KR 20050066864A KR 101138429 B1 KR101138429 B1 KR 101138429B1
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South Korea
Prior art keywords
data line
line
substrate
thin film
film transistor
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Expired - Lifetime
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KR1020050066864A
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English (en)
Korean (ko)
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KR20070012054A (ko
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서종현
오준학
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삼성전자주식회사
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Priority to KR1020050066864A priority Critical patent/KR101138429B1/ko
Priority to US11/355,765 priority patent/US20070018168A1/en
Priority to CNA2006100653732A priority patent/CN1901204A/zh
Priority to JP2006144575A priority patent/JP2007036196A/ja
Publication of KR20070012054A publication Critical patent/KR20070012054A/ko
Application granted granted Critical
Publication of KR101138429B1 publication Critical patent/KR101138429B1/ko
Assigned to 삼성디스플레이 주식회사 reassignment 삼성디스플레이 주식회사 권리의 전부이전등록 Assignors: 삼성전자주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020050066864A 2005-07-22 2005-07-22 박막 트랜지스터 기판 및 그 제조방법 Expired - Lifetime KR101138429B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050066864A KR101138429B1 (ko) 2005-07-22 2005-07-22 박막 트랜지스터 기판 및 그 제조방법
US11/355,765 US20070018168A1 (en) 2005-07-22 2006-02-16 Thin film transistor substrate, display device, and method of fabricating the same
CNA2006100653732A CN1901204A (zh) 2005-07-22 2006-03-23 薄膜晶体管基底、显示装置及其制造方法
JP2006144575A JP2007036196A (ja) 2005-07-22 2006-05-24 薄膜トランジスター基板及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050066864A KR101138429B1 (ko) 2005-07-22 2005-07-22 박막 트랜지스터 기판 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20070012054A KR20070012054A (ko) 2007-01-25
KR101138429B1 true KR101138429B1 (ko) 2012-04-26

Family

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KR1020050066864A Expired - Lifetime KR101138429B1 (ko) 2005-07-22 2005-07-22 박막 트랜지스터 기판 및 그 제조방법

Country Status (4)

Country Link
US (1) US20070018168A1 (https=)
JP (1) JP2007036196A (https=)
KR (1) KR101138429B1 (https=)
CN (1) CN1901204A (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070059668A (ko) * 2005-12-07 2007-06-12 엘지.필립스 엘시디 주식회사 액정표시장치
JP5521270B2 (ja) * 2007-02-21 2014-06-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、および薄膜トランジスタアレイを用いたアクティブマトリクス型ディスプレイ
CN102402090B (zh) * 2011-12-05 2014-05-14 深圳市华星光电技术有限公司 一种阵列基板及液晶显示装置、阵列基板的制造方法
KR102026927B1 (ko) * 2012-12-24 2019-10-01 엘지디스플레이 주식회사 구동부를 포함하는 표시장치
CN103474329A (zh) 2013-09-22 2013-12-25 京东方科技集团股份有限公司 一种膜层图案的制作方法
TWI581436B (zh) * 2014-06-16 2017-05-01 元太科技工業股份有限公司 基板結構及其製作方法
CN104516133B (zh) * 2015-01-27 2017-12-29 深圳市华星光电技术有限公司 阵列基板及该阵列基板的断线修补方法
KR102542186B1 (ko) * 2016-04-04 2023-06-13 삼성디스플레이 주식회사 표시 장치
CN110620154A (zh) * 2019-08-22 2019-12-27 合肥鑫晟光电科技有限公司 薄膜晶体管及其制备方法、阵列基板、显示面板及装置
CN112735281A (zh) * 2021-01-15 2021-04-30 武汉华星光电技术有限公司 显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990075413A (ko) * 1998-03-20 1999-10-15 윤종용 쌍 박막 트랜지스터를 적용한 액정 표시 장치용 박막 트랜지스터 기판
KR20020017992A (ko) * 2000-08-28 2002-03-07 마찌다 가쯔히꼬 액티브 매트릭스 기판, 그 제조방법 및 표시장치
KR20040107741A (ko) * 2003-06-12 2004-12-23 삼성전자주식회사 액정표시장치 및 그 리페어 방법
KR20050003739A (ko) * 2003-07-04 2005-01-12 김재훈 액정표시장치 및 이의 제조방법

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US4368523A (en) * 1979-12-20 1983-01-11 Tokyo Shibaura Denki Kabushiki Kaisha Liquid crystal display device having redundant pairs of address buses
FR2585167B1 (fr) * 1985-07-19 1993-05-07 Gen Electric Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince
JPH03245126A (ja) * 1990-02-23 1991-10-31 Hitachi Ltd 薄膜トランジスタパネル
US5715025A (en) * 1993-02-22 1998-02-03 Goldstar Co., Ltd. Active matrix for liquid crystal displays in which a data bus consists of two data subbuses and each data subbus is separated from an adjacent data bus by one display electrode
KR950703753A (ko) * 1993-07-13 1995-09-20 사또오 후미오 액티브 매트릭스형 표시소자
KR0139319B1 (ko) * 1994-11-14 1998-06-15 김광호 한 화소에 이중배선과 복수의 트랜지스터를 구비한 액정 표시 장치
JPH1039333A (ja) * 1996-07-19 1998-02-13 Sharp Corp アクティブマトリクス型表示装置およびその欠陥修正方法
JPH11288000A (ja) * 1998-04-06 1999-10-19 Hitachi Ltd 液晶表示装置
KR100289538B1 (ko) * 1998-05-20 2001-06-01 김순택 박막트랜지스터 액정표시소자의 배선 레이아웃
JP4118485B2 (ja) * 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100370800B1 (ko) * 2000-06-09 2003-02-05 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제작방법
JP2003107523A (ja) * 2001-09-28 2003-04-09 Hitachi Ltd 液晶表示装置
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Publication number Priority date Publication date Assignee Title
KR19990075413A (ko) * 1998-03-20 1999-10-15 윤종용 쌍 박막 트랜지스터를 적용한 액정 표시 장치용 박막 트랜지스터 기판
KR20020017992A (ko) * 2000-08-28 2002-03-07 마찌다 가쯔히꼬 액티브 매트릭스 기판, 그 제조방법 및 표시장치
KR20040107741A (ko) * 2003-06-12 2004-12-23 삼성전자주식회사 액정표시장치 및 그 리페어 방법
KR20050003739A (ko) * 2003-07-04 2005-01-12 김재훈 액정표시장치 및 이의 제조방법

Also Published As

Publication number Publication date
KR20070012054A (ko) 2007-01-25
CN1901204A (zh) 2007-01-24
US20070018168A1 (en) 2007-01-25
JP2007036196A (ja) 2007-02-08

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PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20250723

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION