KR101125025B1 - 발광소자 및 그 제조방법 - Google Patents

발광소자 및 그 제조방법 Download PDF

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Publication number
KR101125025B1
KR101125025B1 KR1020100071461A KR20100071461A KR101125025B1 KR 101125025 B1 KR101125025 B1 KR 101125025B1 KR 1020100071461 A KR1020100071461 A KR 1020100071461A KR 20100071461 A KR20100071461 A KR 20100071461A KR 101125025 B1 KR101125025 B1 KR 101125025B1
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South Korea
Prior art keywords
layer
light emitting
emitting device
electrode
semiconductor layer
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Expired - Fee Related
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KR1020100071461A
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English (en)
Korean (ko)
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KR20120012998A (ko
Inventor
정환희
이상열
송준오
최광기
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엘지이노텍 주식회사
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Priority to KR1020100071461A priority Critical patent/KR101125025B1/ko
Priority to EP11174943.8A priority patent/EP2410583B1/en
Priority to US13/189,226 priority patent/US8766300B2/en
Priority to JP2011160683A priority patent/JP2012028779A/ja
Priority to CN201110214298.2A priority patent/CN102347411B/zh
Publication of KR20120012998A publication Critical patent/KR20120012998A/ko
Application granted granted Critical
Publication of KR101125025B1 publication Critical patent/KR101125025B1/ko
Priority to US13/929,459 priority patent/US8872212B2/en
Priority to US14/500,311 priority patent/US9356195B2/en
Priority to US15/069,758 priority patent/US10141478B2/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

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  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)
KR1020100071461A 2010-07-23 2010-07-23 발광소자 및 그 제조방법 Expired - Fee Related KR101125025B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020100071461A KR101125025B1 (ko) 2010-07-23 2010-07-23 발광소자 및 그 제조방법
EP11174943.8A EP2410583B1 (en) 2010-07-23 2011-07-21 Reflective electrode configuration for a light emitting diode
JP2011160683A JP2012028779A (ja) 2010-07-23 2011-07-22 発光素子、これを含む発光素子パッケージ及び照明システム
US13/189,226 US8766300B2 (en) 2010-07-23 2011-07-22 Light emitting device, light emitting device package comprising the same and lighting system
CN201110214298.2A CN102347411B (zh) 2010-07-23 2011-07-25 发光器件、包括发光器件的发光器件封装以及照明系统
US13/929,459 US8872212B2 (en) 2010-07-23 2013-06-27 Light emitting device, light emitting device package comprising the same and lighting system
US14/500,311 US9356195B2 (en) 2010-07-23 2014-09-29 Light emitting device, light emitting device package comprising the same and lighting system
US15/069,758 US10141478B2 (en) 2010-07-23 2016-03-14 Structure of a reflective electrode and an OHMIC layer of a light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100071461A KR101125025B1 (ko) 2010-07-23 2010-07-23 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20120012998A KR20120012998A (ko) 2012-02-14
KR101125025B1 true KR101125025B1 (ko) 2012-03-27

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Country Link
US (4) US8766300B2 (enExample)
EP (1) EP2410583B1 (enExample)
JP (1) JP2012028779A (enExample)
KR (1) KR101125025B1 (enExample)
CN (1) CN102347411B (enExample)

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