KR101124919B1 - 노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체 - Google Patents

노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체 Download PDF

Info

Publication number
KR101124919B1
KR101124919B1 KR1020090051522A KR20090051522A KR101124919B1 KR 101124919 B1 KR101124919 B1 KR 101124919B1 KR 1020090051522 A KR1020090051522 A KR 1020090051522A KR 20090051522 A KR20090051522 A KR 20090051522A KR 101124919 B1 KR101124919 B1 KR 101124919B1
Authority
KR
South Korea
Prior art keywords
value
exposure
exposure parameter
substrate
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090051522A
Other languages
English (en)
Korean (ko)
Other versions
KR20090129360A (ko
Inventor
고우이찌로 쯔지따
고지 미까미
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20090129360A publication Critical patent/KR20090129360A/ko
Application granted granted Critical
Publication of KR101124919B1 publication Critical patent/KR101124919B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090051522A 2008-06-11 2009-06-10 노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체 Expired - Fee Related KR101124919B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008153398A JP2009302206A (ja) 2008-06-11 2008-06-11 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JPJP-P-2008-153398 2008-06-11

Publications (2)

Publication Number Publication Date
KR20090129360A KR20090129360A (ko) 2009-12-16
KR101124919B1 true KR101124919B1 (ko) 2012-04-12

Family

ID=40935493

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090051522A Expired - Fee Related KR101124919B1 (ko) 2008-06-11 2009-06-10 노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체

Country Status (5)

Country Link
US (1) US8334968B2 (enExample)
EP (1) EP2133745A1 (enExample)
JP (1) JP2009302206A (enExample)
KR (1) KR101124919B1 (enExample)
TW (1) TWI467344B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5574749B2 (ja) 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP5539097B2 (ja) * 2010-08-06 2014-07-02 キヤノン株式会社 評価方法、決定方法及びプログラム
JP5539140B2 (ja) * 2010-09-28 2014-07-02 キヤノン株式会社 決定方法、露光方法、プログラム及びコンピュータ
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
NL2007477A (en) 2010-10-22 2012-04-24 Asml Netherlands Bv Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus.
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
TWI551205B (zh) * 2013-06-20 2016-09-21 欣興電子股份有限公司 曝光圖像補償方法
JP5681309B2 (ja) * 2014-03-18 2015-03-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP6418606B2 (ja) 2015-08-07 2018-11-07 東芝メモリ株式会社 パターン輪郭抽出装置、パターン輪郭抽出方法およびパターン輪郭抽出プログラム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219154A1 (en) 2002-05-22 2003-11-27 Medvedeva Marina M. Quality measurement of an aerial image
US20070032896A1 (en) * 2005-08-05 2007-02-08 Brion Technologies, Inc. Method for lithography model calibration

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3339174B2 (ja) * 1993-11-08 2002-10-28 ソニー株式会社 フォトマスクの製造方法、露光方法及び半導体装置の製造方法
JP4352498B2 (ja) * 1999-03-26 2009-10-28 ソニー株式会社 パターン露光方法とこれに用いる処理装置
US6401236B1 (en) * 1999-04-05 2002-06-04 Micron Technology Inc. Method to eliminate side lobe printing of attenuated phase shift
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
TWI289878B (en) * 2001-08-30 2007-11-11 United Microelectronics Corp Aggressive optical proximity correction method
AU2003303356A1 (en) * 2002-12-30 2004-07-22 Koninklijke Philips Electronics N.V. Determining lithographic parameters to optimise a process window
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7342646B2 (en) * 2004-01-30 2008-03-11 Asml Masktools B.V. Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model
US7434195B2 (en) * 2004-09-14 2008-10-07 Asml Masktools B.V. Method for performing full-chip manufacturing reliability checking and correction
JP2006303175A (ja) * 2005-04-20 2006-11-02 Toshiba Corp 照明輝度分布の規定方法
JP4690795B2 (ja) * 2005-06-28 2011-06-01 株式会社東芝 半導体装置の製造方法
JP4336671B2 (ja) * 2005-07-15 2009-09-30 キヤノン株式会社 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
KR100958714B1 (ko) * 2005-08-08 2010-05-18 브라이언 테크놀로지스, 인코포레이티드 리소그래피 공정의 포커스-노광 모델을 생성하는 시스템 및방법
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7378202B2 (en) * 2006-02-21 2008-05-27 Mentor Graphics Corporation Grid-based resist simulation
JP2008041710A (ja) * 2006-08-01 2008-02-21 Fujitsu Ltd 照明光学装置、露光方法及び設計方法
US7512927B2 (en) * 2006-11-02 2009-03-31 International Business Machines Corporation Printability verification by progressive modeling accuracy
US8056022B2 (en) * 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219154A1 (en) 2002-05-22 2003-11-27 Medvedeva Marina M. Quality measurement of an aerial image
US20070032896A1 (en) * 2005-08-05 2007-02-08 Brion Technologies, Inc. Method for lithography model calibration

Also Published As

Publication number Publication date
TWI467344B (zh) 2015-01-01
KR20090129360A (ko) 2009-12-16
TW201003331A (en) 2010-01-16
US8334968B2 (en) 2012-12-18
JP2009302206A (ja) 2009-12-24
US20090310116A1 (en) 2009-12-17
EP2133745A1 (en) 2009-12-16

Similar Documents

Publication Publication Date Title
KR101124919B1 (ko) 노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체
CN110622069B (zh) 用于预测器件制造工艺的良率的方法
KR100920857B1 (ko) 레지스트 패턴 형상 예측 방법, 레지스트 패턴 형상을예측하는 프로그램을 기억한 컴퓨터 판독가능한 기록 매체및 레지스트 패턴 형상을 예측하는 컴퓨터
TWI571701B (zh) 偵測微影熱點的方法
TWI442254B (zh) 決定將形貌變化影響模型化之光學微影製程模型之方法及設備
CN101258498A (zh) 用于形成光刻工艺的焦点曝光模型的系统和方法
KR100494964B1 (ko) 반도체 디바이스의 레이아웃 패턴을 시뮬레이션하는리소그래피 프로세스 마진 평가 장치
US7966580B2 (en) Process-model generation method, computer program product, and pattern correction method
CN114563928A (zh) 一种套刻标记的优化筛选方法、装置、设备、存储介质及程序产品
US7207030B2 (en) Method for improving a simulation model of photolithographic projection
US20100166289A1 (en) Feature-quantity extracting method, designed-circuit-pattern verifying method, and computer program product
US20220357672A1 (en) Method for inferring a processing parameter such as focus and associated apparatuses and manufacturing method
KR100878613B1 (ko) 노광방법
US11579535B2 (en) Method of determining the contribution of a processing apparatus to a substrate parameter
KR101175341B1 (ko) 리소그래피 시스템에서 조명기의 조도 프로파일을 결정하는 장치 및 그 제조방법
JP2005250360A (ja) マスクパターンの検証装置および検証方法
JP3583622B2 (ja) レジストパターン予測方法
EP3913435A1 (en) Configuration of an imputer model
EP4139749A1 (en) Configuration of an imputer model
CN113189851B (zh) 基于bfgs拟牛顿-内点算法的光刻机匹配方法
CN119472183B (zh) 光源掩膜协同优化iro模型的确定方法、装置及设备
JP2005049460A (ja) レジストパターン作成方法、レジストパターン作成装置、フォトマスクの設計方法及びフォトマスク
KR20250140548A (ko) 예상 임계 치수를 통한 결함 확률 모델링에 의한 실패율 예측의 정확도 개선
KR20250137613A (ko) 포커스 메트롤로지 방법 및 연계된 메트롤로지 디바이스
WO2025098704A1 (en) Focus metrology method and method for designing a focus target for focus metrology

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20150127

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160121

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20170125

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20180125

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20190222

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20200218

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20210301

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20210301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000