JP2009302206A - 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法 - Google Patents

露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP2009302206A
JP2009302206A JP2008153398A JP2008153398A JP2009302206A JP 2009302206 A JP2009302206 A JP 2009302206A JP 2008153398 A JP2008153398 A JP 2008153398A JP 2008153398 A JP2008153398 A JP 2008153398A JP 2009302206 A JP2009302206 A JP 2009302206A
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JP
Japan
Prior art keywords
exposure
value
substrate
values
exposure parameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008153398A
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English (en)
Japanese (ja)
Other versions
JP2009302206A5 (enExample
Inventor
Koichiro Tsujita
好一郎 辻田
Koji Mikami
晃司 三上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008153398A priority Critical patent/JP2009302206A/ja
Priority to EP09007004A priority patent/EP2133745A1/en
Priority to US12/480,660 priority patent/US8334968B2/en
Priority to TW98119233A priority patent/TWI467344B/zh
Priority to KR1020090051522A priority patent/KR101124919B1/ko
Publication of JP2009302206A publication Critical patent/JP2009302206A/ja
Publication of JP2009302206A5 publication Critical patent/JP2009302206A5/ja
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70458—Mix-and-match, i.e. multiple exposures of the same area using a similar type of exposure apparatus, e.g. multiple exposures using a UV apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008153398A 2008-06-11 2008-06-11 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法 Pending JP2009302206A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008153398A JP2009302206A (ja) 2008-06-11 2008-06-11 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
EP09007004A EP2133745A1 (en) 2008-06-11 2009-05-26 Method of and program for determining an exposure parameter, exposure method, and device manufacturing method
US12/480,660 US8334968B2 (en) 2008-06-11 2009-06-08 Recording medium storing program for determining exposure parameter, exposure method, and method of manufacturing device
TW98119233A TWI467344B (zh) 2008-06-11 2009-06-09 決定曝光參數的方法，曝光方法，製造元件的方法及記錄媒體
KR1020090051522A KR101124919B1 (ko) 2008-06-11 2009-06-10 노광 파라미터의 결정 방법, 노광 방법, 디바이스 제조 방법 및 기록 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008153398A JP2009302206A (ja) 2008-06-11 2008-06-11 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2009302206A true JP2009302206A (ja) 2009-12-24
JP2009302206A5 JP2009302206A5 (enExample) 2011-07-28

Family

ID=40935493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008153398A Pending JP2009302206A (ja) 2008-06-11 2008-06-11 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法

Country Status (5)

Country Link
US (1) US8334968B2 (enExample)
EP (1) EP2133745A1 (enExample)
JP (1) JP2009302206A (enExample)
KR (1) KR101124919B1 (enExample)
TW (1) TWI467344B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176119A (ja) * 2010-02-24 2011-09-08 Canon Inc 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム
JP2012038939A (ja) * 2010-08-06 2012-02-23 Canon Inc 評価方法、決定方法及びプログラム
JP2012074514A (ja) * 2010-09-28 2012-04-12 Canon Inc 決定方法、露光方法及びプログラム
JP2012094860A (ja) * 2010-10-22 2012-05-17 Asml Netherlands Bv リソグラフィプロセス、デバイス製造方法、リソグラフィ装置、コンピュータプログラム製品およびシミュレーション装置を最適化する方法
JP2014143432A (ja) * 2014-03-18 2014-08-07 Canon Inc 決定方法、露光方法及びプログラム
US9633429B2 (en) 2015-08-07 2017-04-25 Kabushiki Kaisha Toshiba Pattern outline extraction device, pattern outline extraction method, and computer program product

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
TWI551205B (zh) * 2013-06-20 2016-09-21 欣興電子股份有限公司 曝光圖像補償方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277426A (ja) * 1999-03-26 2000-10-06 Sony Corp パターン露光方法とこれに用いる処理装置
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
JP2006303175A (ja) * 2005-04-20 2006-11-02 Toshiba Corp 照明輝度分布の規定方法
JP2007027418A (ja) * 2005-07-15 2007-02-01 Canon Inc 露光方法
JP2007158328A (ja) * 2005-11-30 2007-06-21 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2008041710A (ja) * 2006-08-01 2008-02-21 Fujitsu Ltd 照明光学装置、露光方法及び設計方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3339174B2 (ja) * 1993-11-08 2002-10-28 ソニー株式会社 フォトマスクの製造方法、露光方法及び半導体装置の製造方法
US6401236B1 (en) * 1999-04-05 2002-06-04 Micron Technology Inc. Method to eliminate side lobe printing of attenuated phase shift
TWI289878B (en) * 2001-08-30 2007-11-11 United Microelectronics Corp Aggressive optical proximity correction method
US7035446B2 (en) * 2002-05-22 2006-04-25 Lsi Logic Corporation Quality measurement of an aerial image
CN1732412A (zh) * 2002-12-30 2006-02-08 皇家飞利浦电子股份有限公司 确定最佳工艺窗口的最佳工艺设定的方法,该最佳工艺窗口优化了确定光刻工艺最佳工艺窗口的工艺性能
US7030966B2 (en) * 2003-02-11 2006-04-18 Asml Netherlands B.V. Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US7342646B2 (en) * 2004-01-30 2008-03-11 Asml Masktools B.V. Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model
TWI362568B (en) * 2004-09-14 2012-04-21 Asml Masktools Bv A method for performing full-chip manufacturing reliability checking and correction
JP4690795B2 (ja) * 2005-06-28 2011-06-01 株式会社東芝 半導体装置の製造方法
US7488933B2 (en) * 2005-08-05 2009-02-10 Brion Technologies, Inc. Method for lithography model calibration
US7747978B2 (en) * 2005-08-08 2010-06-29 Asml Netherlands B.V. System and method for creating a focus-exposure model of a lithography process
US7378202B2 (en) * 2006-02-21 2008-05-27 Mentor Graphics Corporation Grid-based resist simulation
US7512927B2 (en) * 2006-11-02 2009-03-31 International Business Machines Corporation Printability verification by progressive modeling accuracy
US8056022B2 (en) * 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
JP2009302206A (ja) * 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277426A (ja) * 1999-03-26 2000-10-06 Sony Corp パターン露光方法とこれに用いる処理装置
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
JP2006303175A (ja) * 2005-04-20 2006-11-02 Toshiba Corp 照明輝度分布の規定方法
JP2007027418A (ja) * 2005-07-15 2007-02-01 Canon Inc 露光方法
JP2007158328A (ja) * 2005-11-30 2007-06-21 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2008041710A (ja) * 2006-08-01 2008-02-21 Fujitsu Ltd 照明光学装置、露光方法及び設計方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176119A (ja) * 2010-02-24 2011-09-08 Canon Inc 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム
US9036897B2 (en) 2010-02-24 2015-05-19 Canon Kabushiki Kaisha Storage medium storing computer program for determining at least one of exposure condition and mask pattern
JP2012038939A (ja) * 2010-08-06 2012-02-23 Canon Inc 評価方法、決定方法及びプログラム
JP2012074514A (ja) * 2010-09-28 2012-04-12 Canon Inc 決定方法、露光方法及びプログラム
TWI448836B (zh) * 2010-09-28 2014-08-11 Canon Kk 決定方法、曝光方法、和儲存媒介
JP2012094860A (ja) * 2010-10-22 2012-05-17 Asml Netherlands Bv リソグラフィプロセス、デバイス製造方法、リソグラフィ装置、コンピュータプログラム製品およびシミュレーション装置を最適化する方法
US9170502B2 (en) 2010-10-22 2015-10-27 Asml Netherlands B.V. Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus
JP2014143432A (ja) * 2014-03-18 2014-08-07 Canon Inc 決定方法、露光方法及びプログラム
US9633429B2 (en) 2015-08-07 2017-04-25 Kabushiki Kaisha Toshiba Pattern outline extraction device, pattern outline extraction method, and computer program product

Also Published As

Publication number Publication date
TWI467344B (zh) 2015-01-01
TW201003331A (en) 2010-01-16
EP2133745A1 (en) 2009-12-16
US8334968B2 (en) 2012-12-18
KR101124919B1 (ko) 2012-04-12
KR20090129360A (ko) 2009-12-16
US20090310116A1 (en) 2009-12-17

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