KR101121195B1 - 캐소드 기판 및 그 제작 방법 - Google Patents

캐소드 기판 및 그 제작 방법 Download PDF

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Publication number
KR101121195B1
KR101121195B1 KR1020050014324A KR20050014324A KR101121195B1 KR 101121195 B1 KR101121195 B1 KR 101121195B1 KR 1020050014324 A KR1020050014324 A KR 1020050014324A KR 20050014324 A KR20050014324 A KR 20050014324A KR 101121195 B1 KR101121195 B1 KR 101121195B1
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KR
South Korea
Prior art keywords
insulating layer
emitter
opening
hole
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050014324A
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English (en)
Korean (ko)
Other versions
KR20060043044A (ko
Inventor
하루히사 나카노
마사키 히라가와
오사무 미우라
히로히코 무라카미
켄수케 오카사카
토모아키 코지마
Original Assignee
가부시키가이샤 알박
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Publication date
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Publication of KR20060043044A publication Critical patent/KR20060043044A/ko
Application granted granted Critical
Publication of KR101121195B1 publication Critical patent/KR101121195B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
KR1020050014324A 2004-03-01 2005-02-22 캐소드 기판 및 그 제작 방법 Expired - Fee Related KR101121195B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004056624A JP4456891B2 (ja) 2004-03-01 2004-03-01 カソード基板及びその作製方法
JPJP-P-2004-00056624 2004-03-01

Publications (2)

Publication Number Publication Date
KR20060043044A KR20060043044A (ko) 2006-05-15
KR101121195B1 true KR101121195B1 (ko) 2012-03-23

Family

ID=35031716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050014324A Expired - Fee Related KR101121195B1 (ko) 2004-03-01 2005-02-22 캐소드 기판 및 그 제작 방법

Country Status (5)

Country Link
US (2) US20050230750A1 (enExample)
JP (1) JP4456891B2 (enExample)
KR (1) KR101121195B1 (enExample)
CN (1) CN100477060C (enExample)
TW (1) TW200531116A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833639B2 (ja) * 2005-11-09 2011-12-07 株式会社アルバック カソード基板及びその作製方法、並びに表示素子及びその作製方法
JP4755898B2 (ja) * 2005-12-28 2011-08-24 株式会社アルバック カソード基板の作製方法及び表示素子の作製方法
CN102034664A (zh) * 2009-09-30 2011-04-27 清华大学 场发射阴极结构及场发射显示器
DE102010000895B4 (de) * 2010-01-14 2018-12-27 Robert Bosch Gmbh Verfahren zum Herstellen eines Durchkontaktes eines Halbleiterbauelements mit einem umgebenden ringförmigen Isolationsgraben und entsprechendes Halbleiterbauelement
EP2602830A4 (en) 2010-08-05 2017-03-22 Fujitsu Limited Method for manufacturing semiconductor device and method for growing graphene
CN101908457B (zh) * 2010-08-27 2012-05-23 清华大学 金属栅网及场发射装置和场发射显示器
CN105374654B (zh) * 2014-08-25 2018-11-06 同方威视技术股份有限公司 电子源、x射线源、使用了该x射线源的设备
US10658144B2 (en) * 2017-07-22 2020-05-19 Modern Electron, LLC Shadowed grid structures for electrodes in vacuum electronics
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管
CN114525498B (zh) * 2022-03-07 2022-11-01 苏州迈为科技股份有限公司 下垂罩板及带有该下垂罩板的pecvd设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001256884A (ja) * 2000-03-10 2001-09-21 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3252545B2 (ja) * 1993-07-21 2002-02-04 ソニー株式会社 電界放出型カソードを用いたフラットディスプレイ
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
US5710483A (en) * 1996-04-08 1998-01-20 Industrial Technology Research Institute Field emission device with micromesh collimator
FR2756969B1 (fr) * 1996-12-06 1999-01-08 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
JP3740295B2 (ja) * 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP2000260299A (ja) * 1999-03-09 2000-09-22 Matsushita Electric Ind Co Ltd 冷電子放出素子及びその製造方法
US6448701B1 (en) * 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
JP2002334673A (ja) * 2001-05-09 2002-11-22 Hitachi Ltd 表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001256884A (ja) * 2000-03-10 2001-09-21 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法

Also Published As

Publication number Publication date
JP4456891B2 (ja) 2010-04-28
KR20060043044A (ko) 2006-05-15
TW200531116A (en) 2005-09-16
JP2005251430A (ja) 2005-09-15
US20090325452A1 (en) 2009-12-31
CN100477060C (zh) 2009-04-08
CN1664972A (zh) 2005-09-07
TWI359436B (enExample) 2012-03-01
US20050230750A1 (en) 2005-10-20

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