CN100477060C - 阴极基板及其制造方法 - Google Patents

阴极基板及其制造方法 Download PDF

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Publication number
CN100477060C
CN100477060C CNB2005100518261A CN200510051826A CN100477060C CN 100477060 C CN100477060 C CN 100477060C CN B2005100518261 A CNB2005100518261 A CN B2005100518261A CN 200510051826 A CN200510051826 A CN 200510051826A CN 100477060 C CN100477060 C CN 100477060C
Authority
CN
China
Prior art keywords
emitter
hole
electrode layer
insulating barrier
cathode base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100518261A
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English (en)
Chinese (zh)
Other versions
CN1664972A (zh
Inventor
中野美尚
平川正明
三浦治
村上裕彦
冈坂谦介
小岛智明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AIHATSUSHINA Co Ltd
Original Assignee
AIHATSUSHINA Co Ltd
Ulvac Seimaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AIHATSUSHINA Co Ltd, Ulvac Seimaku KK filed Critical AIHATSUSHINA Co Ltd
Publication of CN1664972A publication Critical patent/CN1664972A/zh
Application granted granted Critical
Publication of CN100477060C publication Critical patent/CN100477060C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
    • H01J29/48—Electron guns
    • H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
CNB2005100518261A 2004-03-01 2005-03-01 阴极基板及其制造方法 Expired - Fee Related CN100477060C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004056624 2004-03-01
JP2004056624A JP4456891B2 (ja) 2004-03-01 2004-03-01 カソード基板及びその作製方法

Publications (2)

Publication Number Publication Date
CN1664972A CN1664972A (zh) 2005-09-07
CN100477060C true CN100477060C (zh) 2009-04-08

Family

ID=35031716

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100518261A Expired - Fee Related CN100477060C (zh) 2004-03-01 2005-03-01 阴极基板及其制造方法

Country Status (5)

Country Link
US (2) US20050230750A1 (enExample)
JP (1) JP4456891B2 (enExample)
KR (1) KR101121195B1 (enExample)
CN (1) CN100477060C (enExample)
TW (1) TW200531116A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833639B2 (ja) * 2005-11-09 2011-12-07 株式会社アルバック カソード基板及びその作製方法、並びに表示素子及びその作製方法
JP4755898B2 (ja) * 2005-12-28 2011-08-24 株式会社アルバック カソード基板の作製方法及び表示素子の作製方法
CN102034664A (zh) * 2009-09-30 2011-04-27 清华大学 场发射阴极结构及场发射显示器
DE102010000895B4 (de) * 2010-01-14 2018-12-27 Robert Bosch Gmbh Verfahren zum Herstellen eines Durchkontaktes eines Halbleiterbauelements mit einem umgebenden ringförmigen Isolationsgraben und entsprechendes Halbleiterbauelement
EP2602830A4 (en) 2010-08-05 2017-03-22 Fujitsu Limited Method for manufacturing semiconductor device and method for growing graphene
CN101908457B (zh) * 2010-08-27 2012-05-23 清华大学 金属栅网及场发射装置和场发射显示器
CN105374654B (zh) * 2014-08-25 2018-11-06 同方威视技术股份有限公司 电子源、x射线源、使用了该x射线源的设备
US10658144B2 (en) * 2017-07-22 2020-05-19 Modern Electron, LLC Shadowed grid structures for electrodes in vacuum electronics
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管
CN114525498B (zh) * 2022-03-07 2022-11-01 苏州迈为科技股份有限公司 下垂罩板及带有该下垂罩板的pecvd设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296632A (zh) * 1999-03-09 2001-05-23 松下电器产业株式会社 场发射器件,其制造方法及使用它的显示器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3252545B2 (ja) * 1993-07-21 2002-02-04 ソニー株式会社 電界放出型カソードを用いたフラットディスプレイ
US5621272A (en) * 1995-05-30 1997-04-15 Texas Instruments Incorporated Field emission device with over-etched gate dielectric
US5710483A (en) * 1996-04-08 1998-01-20 Industrial Technology Research Institute Field emission device with micromesh collimator
FR2756969B1 (fr) * 1996-12-06 1999-01-08 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
JP3740295B2 (ja) * 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP2001256884A (ja) * 2000-03-10 2001-09-21 Sony Corp 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
US6448701B1 (en) * 2001-03-09 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Self-aligned integrally gated nanofilament field emitter cell and array
JP2002334673A (ja) * 2001-05-09 2002-11-22 Hitachi Ltd 表示装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1296632A (zh) * 1999-03-09 2001-05-23 松下电器产业株式会社 场发射器件,其制造方法及使用它的显示器件

Also Published As

Publication number Publication date
JP4456891B2 (ja) 2010-04-28
KR20060043044A (ko) 2006-05-15
TW200531116A (en) 2005-09-16
KR101121195B1 (ko) 2012-03-23
JP2005251430A (ja) 2005-09-15
US20090325452A1 (en) 2009-12-31
CN1664972A (zh) 2005-09-07
TWI359436B (enExample) 2012-03-01
US20050230750A1 (en) 2005-10-20

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Free format text: FORMER OWNER: ULVAC SEIMAKU KK

Effective date: 20120329

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20120329

Address after: Kanagawa, Japan

Patentee after: Aihatsushina Co., Ltd.

Address before: Kanagawa, Japan

Co-patentee before: Ulvac Seimaku KK

Patentee before: Aihatsushina Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090408

Termination date: 20210301