KR20060043044A - 캐소드 기판 및 그 제작 방법 - Google Patents
캐소드 기판 및 그 제작 방법 Download PDFInfo
- Publication number
- KR20060043044A KR20060043044A KR1020050014324A KR20050014324A KR20060043044A KR 20060043044 A KR20060043044 A KR 20060043044A KR 1020050014324 A KR1020050014324 A KR 1020050014324A KR 20050014324 A KR20050014324 A KR 20050014324A KR 20060043044 A KR20060043044 A KR 20060043044A
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- Prior art keywords
- insulating layer
- emitter
- hole
- opening
- electrode layer
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001552 radio frequency sputter deposition Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002041 carbon nanotube Substances 0.000 description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
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- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
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- 238000000206 photolithography Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
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- 238000007740 vapor deposition Methods 0.000 description 2
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- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- OKJMLYFJRFYBPS-UHFFFAOYSA-J tetraazanium;cerium(4+);tetrasulfate Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OKJMLYFJRFYBPS-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
Claims (6)
- 처리기판 상에 차례로 적층한 캐소드 전극층, 절연층 및 게이트 전극층을 구비하고, 이 절연층에 형성한 홀의 저부에 에미터를 마련함과 아울러, 상기 게이트 전극층에 게이트홀 개구부를 형성한 캐소드 기판에 있어서, 상기 게이트홀 개구부를 상기 절연층의 홀의 개구 면적보다 작은 면적을 가지는 복수개의 개구로 구성하고, 각 개구를 에미터에 대향하여 절연층의 홀 바로 위에 밀집시킨 것을 특징으로 하는 캐소드 기판.
- 청구항 1에 있어서,상기 각 개구의 개구 면적 및 개수의 적어도 하나를 증감시키어, 삼극 전계 방출 소자를 구성하기 위하여 대향하여 배치되는 애노드 기판으로의 전하 주입 효율을 변화시키도록 한 것을 특징으로 하는 캐소드 기판.
- 청구항 1 또는 청구항 2에 있어서,상기 에미터를 카본계 에미터 재료로 구성하되, 이 카본계 에미터 재료는 촉매층 상에 성장된 것을 특징으로 하는 캐소드 기판.
- 청구항 1 내지 청구항 3 중 어느 하나의 캐소드 기판을 제작하는 방법에 있어서,처리 기판상에, 캐소드 전극층, 절연층 및 게이트 전극층을 차례로 적층하고,이 게이트 전극층 상에, 게이트홀 개구부를 형성하기 위한 레지스트 패턴을 마련한 후, 식각에 의해 복수개의 개구로 된 게이트홀 개구부를 형성하고,이 게이트홀 개구부를 통해 깊이 방향 및 폭 방향으로 동시에 절연층을 식각하여 하나의 홀을 형성함으로써 이 홀 바로 위에 게이트홀 개구부의 각 개구를 밀집시키고,홀의 저부에 에미터를 마련하는 것을 특징으로 하는 캐소드 기판을 제작하는 방법.
- 청구항 4에 있어서,상기 에미터를 카본계 에미터 재료로 구성하되, 이 카본계 에미터 재료를 성장시킬 때에 촉매로서 작용하는 촉매층을 절연층의 아래 쪽에 미리 형성하는 것을 특징으로 하는 캐소드 기판을 제작하는 방법.
- 청구항 4에 있어서,상기 에미터를 카본계 에미터 재료로 구성하되, 이 카본계 에미터 재료를 성장시킬 때에 촉매로서 작용하는 촉매층을, 절연층의 식각 후에, 리프트 오프법에 따라 형성하고, 화학기상증착법에 의해 홀 저부에 카본계 에미터를 성장하거나, 혹은 프린트법에 의해 카본계 에미터를 도포하는 것을 특징으로 하는 캐소드 기판을 제작하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00056624 | 2004-03-01 | ||
JP2004056624A JP4456891B2 (ja) | 2004-03-01 | 2004-03-01 | カソード基板及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060043044A true KR20060043044A (ko) | 2006-05-15 |
KR101121195B1 KR101121195B1 (ko) | 2012-03-23 |
Family
ID=35031716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050014324A KR101121195B1 (ko) | 2004-03-01 | 2005-02-22 | 캐소드 기판 및 그 제작 방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20050230750A1 (ko) |
JP (1) | JP4456891B2 (ko) |
KR (1) | KR101121195B1 (ko) |
CN (1) | CN100477060C (ko) |
TW (1) | TW200531116A (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4833639B2 (ja) * | 2005-11-09 | 2011-12-07 | 株式会社アルバック | カソード基板及びその作製方法、並びに表示素子及びその作製方法 |
JP4755898B2 (ja) * | 2005-12-28 | 2011-08-24 | 株式会社アルバック | カソード基板の作製方法及び表示素子の作製方法 |
CN102034664A (zh) * | 2009-09-30 | 2011-04-27 | 清华大学 | 场发射阴极结构及场发射显示器 |
DE102010000895B4 (de) * | 2010-01-14 | 2018-12-27 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Durchkontaktes eines Halbleiterbauelements mit einem umgebenden ringförmigen Isolationsgraben und entsprechendes Halbleiterbauelement |
JP5590125B2 (ja) * | 2010-08-05 | 2014-09-17 | 富士通株式会社 | 半導体装置の製造方法 |
CN101908457B (zh) * | 2010-08-27 | 2012-05-23 | 清华大学 | 金属栅网及场发射装置和场发射显示器 |
US10658144B2 (en) * | 2017-07-22 | 2020-05-19 | Modern Electron, LLC | Shadowed grid structures for electrodes in vacuum electronics |
CN110767519B (zh) * | 2019-10-21 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
CN114525498B (zh) * | 2022-03-07 | 2022-11-01 | 苏州迈为科技股份有限公司 | 下垂罩板及带有该下垂罩板的pecvd设备 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3252545B2 (ja) * | 1993-07-21 | 2002-02-04 | ソニー株式会社 | 電界放出型カソードを用いたフラットディスプレイ |
US5621272A (en) * | 1995-05-30 | 1997-04-15 | Texas Instruments Incorporated | Field emission device with over-etched gate dielectric |
US5710483A (en) * | 1996-04-08 | 1998-01-20 | Industrial Technology Research Institute | Field emission device with micromesh collimator |
FR2756969B1 (fr) * | 1996-12-06 | 1999-01-08 | Commissariat Energie Atomique | Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source |
JP3740295B2 (ja) * | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
JP2000260299A (ja) * | 1999-03-09 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 冷電子放出素子及びその製造方法 |
JP2001256884A (ja) * | 2000-03-10 | 2001-09-21 | Sony Corp | 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 |
US6448701B1 (en) * | 2001-03-09 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned integrally gated nanofilament field emitter cell and array |
JP2002334673A (ja) * | 2001-05-09 | 2002-11-22 | Hitachi Ltd | 表示装置 |
-
2004
- 2004-03-01 JP JP2004056624A patent/JP4456891B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-15 TW TW094104346A patent/TW200531116A/zh not_active IP Right Cessation
- 2005-02-22 KR KR1020050014324A patent/KR101121195B1/ko active IP Right Grant
- 2005-02-28 US US11/066,562 patent/US20050230750A1/en not_active Abandoned
- 2005-03-01 CN CNB2005100518261A patent/CN100477060C/zh not_active Expired - Fee Related
-
2009
- 2009-08-10 US US12/538,354 patent/US20090325452A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2005251430A (ja) | 2005-09-15 |
CN100477060C (zh) | 2009-04-08 |
JP4456891B2 (ja) | 2010-04-28 |
CN1664972A (zh) | 2005-09-07 |
US20090325452A1 (en) | 2009-12-31 |
KR101121195B1 (ko) | 2012-03-23 |
TW200531116A (en) | 2005-09-16 |
TWI359436B (ko) | 2012-03-01 |
US20050230750A1 (en) | 2005-10-20 |
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