TW200531116A - Cathode base plate and its manufacture method - Google Patents
Cathode base plate and its manufacture method Download PDFInfo
- Publication number
- TW200531116A TW200531116A TW094104346A TW94104346A TW200531116A TW 200531116 A TW200531116 A TW 200531116A TW 094104346 A TW094104346 A TW 094104346A TW 94104346 A TW94104346 A TW 94104346A TW 200531116 A TW200531116 A TW 200531116A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- emitter
- hole
- gate
- gate electrode
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 63
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000003054 catalyst Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000009413 insulation Methods 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 7
- 230000004888 barrier function Effects 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052770 Uranium Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000001552 radio frequency sputter deposition Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 description 5
- 239000002041 carbon nanotube Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002121 nanofiber Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/481—Electron guns using field-emission, photo-emission, or secondary-emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004056624A JP4456891B2 (ja) | 2004-03-01 | 2004-03-01 | カソード基板及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200531116A true TW200531116A (en) | 2005-09-16 |
| TWI359436B TWI359436B (enExample) | 2012-03-01 |
Family
ID=35031716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094104346A TW200531116A (en) | 2004-03-01 | 2005-02-15 | Cathode base plate and its manufacture method |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20050230750A1 (enExample) |
| JP (1) | JP4456891B2 (enExample) |
| KR (1) | KR101121195B1 (enExample) |
| CN (1) | CN100477060C (enExample) |
| TW (1) | TW200531116A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4833639B2 (ja) * | 2005-11-09 | 2011-12-07 | 株式会社アルバック | カソード基板及びその作製方法、並びに表示素子及びその作製方法 |
| JP4755898B2 (ja) * | 2005-12-28 | 2011-08-24 | 株式会社アルバック | カソード基板の作製方法及び表示素子の作製方法 |
| CN102034664A (zh) * | 2009-09-30 | 2011-04-27 | 清华大学 | 场发射阴极结构及场发射显示器 |
| DE102010000895B4 (de) * | 2010-01-14 | 2018-12-27 | Robert Bosch Gmbh | Verfahren zum Herstellen eines Durchkontaktes eines Halbleiterbauelements mit einem umgebenden ringförmigen Isolationsgraben und entsprechendes Halbleiterbauelement |
| EP2602830A4 (en) | 2010-08-05 | 2017-03-22 | Fujitsu Limited | Method for manufacturing semiconductor device and method for growing graphene |
| CN101908457B (zh) * | 2010-08-27 | 2012-05-23 | 清华大学 | 金属栅网及场发射装置和场发射显示器 |
| CN105374654B (zh) * | 2014-08-25 | 2018-11-06 | 同方威视技术股份有限公司 | 电子源、x射线源、使用了该x射线源的设备 |
| US10658144B2 (en) * | 2017-07-22 | 2020-05-19 | Modern Electron, LLC | Shadowed grid structures for electrodes in vacuum electronics |
| CN110767519B (zh) * | 2019-10-21 | 2022-03-04 | 中国电子科技集团公司第十二研究所 | 一种场发射电子源结构及其形成方法、电子源、微波管 |
| CN114525498B (zh) * | 2022-03-07 | 2022-11-01 | 苏州迈为科技股份有限公司 | 下垂罩板及带有该下垂罩板的pecvd设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3252545B2 (ja) * | 1993-07-21 | 2002-02-04 | ソニー株式会社 | 電界放出型カソードを用いたフラットディスプレイ |
| US5621272A (en) * | 1995-05-30 | 1997-04-15 | Texas Instruments Incorporated | Field emission device with over-etched gate dielectric |
| US5710483A (en) * | 1996-04-08 | 1998-01-20 | Industrial Technology Research Institute | Field emission device with micromesh collimator |
| FR2756969B1 (fr) * | 1996-12-06 | 1999-01-08 | Commissariat Energie Atomique | Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source |
| JP3740295B2 (ja) * | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | カーボンナノチューブデバイス、その製造方法及び電子放出素子 |
| JP2000260299A (ja) * | 1999-03-09 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 冷電子放出素子及びその製造方法 |
| JP2001256884A (ja) * | 2000-03-10 | 2001-09-21 | Sony Corp | 冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法 |
| US6448701B1 (en) * | 2001-03-09 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned integrally gated nanofilament field emitter cell and array |
| JP2002334673A (ja) * | 2001-05-09 | 2002-11-22 | Hitachi Ltd | 表示装置 |
-
2004
- 2004-03-01 JP JP2004056624A patent/JP4456891B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-15 TW TW094104346A patent/TW200531116A/zh not_active IP Right Cessation
- 2005-02-22 KR KR1020050014324A patent/KR101121195B1/ko not_active Expired - Fee Related
- 2005-02-28 US US11/066,562 patent/US20050230750A1/en not_active Abandoned
- 2005-03-01 CN CNB2005100518261A patent/CN100477060C/zh not_active Expired - Fee Related
-
2009
- 2009-08-10 US US12/538,354 patent/US20090325452A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP4456891B2 (ja) | 2010-04-28 |
| KR20060043044A (ko) | 2006-05-15 |
| KR101121195B1 (ko) | 2012-03-23 |
| JP2005251430A (ja) | 2005-09-15 |
| US20090325452A1 (en) | 2009-12-31 |
| CN100477060C (zh) | 2009-04-08 |
| CN1664972A (zh) | 2005-09-07 |
| TWI359436B (enExample) | 2012-03-01 |
| US20050230750A1 (en) | 2005-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |