KR101118834B1 - 노광 장치 및 이를 이용한 반도체 장치의 제조 방법 - Google Patents

노광 장치 및 이를 이용한 반도체 장치의 제조 방법 Download PDF

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Publication number
KR101118834B1
KR101118834B1 KR1020117014358A KR20117014358A KR101118834B1 KR 101118834 B1 KR101118834 B1 KR 101118834B1 KR 1020117014358 A KR1020117014358 A KR 1020117014358A KR 20117014358 A KR20117014358 A KR 20117014358A KR 101118834 B1 KR101118834 B1 KR 101118834B1
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KR
South Korea
Prior art keywords
mask
film
wafer
photoresist
semiconductor wafer
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Expired - Fee Related
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KR1020117014358A
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English (en)
Korean (ko)
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KR20110091015A (ko
Inventor
요시히코 오카모토
마사미 오기타
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요시히코 오카모토
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Application filed by 요시히코 오카모토 filed Critical 요시히코 오카모토
Publication of KR20110091015A publication Critical patent/KR20110091015A/ko
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Publication of KR101118834B1 publication Critical patent/KR101118834B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/975—Substrate or mask aligning feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/976—Temporary protective layer

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117014358A 2004-02-09 2005-02-04 노광 장치 및 이를 이용한 반도체 장치의 제조 방법 Expired - Fee Related KR101118834B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004031528 2004-02-09
JPJP-P-2004-031528 2004-02-09
PCT/JP2005/001669 WO2005076322A1 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067018448A Division KR101118787B1 (ko) 2004-02-09 2005-02-04 노광 장치 및 이를 이용한 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20110091015A KR20110091015A (ko) 2011-08-10
KR101118834B1 true KR101118834B1 (ko) 2012-03-21

Family

ID=34836053

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117014358A Expired - Fee Related KR101118834B1 (ko) 2004-02-09 2005-02-04 노광 장치 및 이를 이용한 반도체 장치의 제조 방법
KR1020067018448A Expired - Fee Related KR101118787B1 (ko) 2004-02-09 2005-02-04 노광 장치 및 이를 이용한 반도체 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020067018448A Expired - Fee Related KR101118787B1 (ko) 2004-02-09 2005-02-04 노광 장치 및 이를 이용한 반도체 장치의 제조 방법

Country Status (4)

Country Link
US (2) US8048614B2 (https=)
JP (2) JP4529141B2 (https=)
KR (2) KR101118834B1 (https=)
WO (1) WO2005076322A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450769B2 (ja) * 2005-06-16 2010-04-14 富士フイルム株式会社 画像処理装置、画像描画装置及びシステム
JP6474655B2 (ja) * 2014-09-30 2019-02-27 エイブリック株式会社 レチクル透過率測定方法、投影露光装置および投影露光方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
WO2001002908A1 (en) * 1999-06-30 2001-01-11 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2001117213A (ja) 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS63295350A (ja) 1987-05-26 1988-12-01 Ozen Corp シ−ト重複検知装置
JPH0216717A (ja) * 1988-07-05 1990-01-19 Nikon Corp パターン投影装置
JPH03137511A (ja) 1989-10-24 1991-06-12 Nkk Corp 二重管式連通管
JPH0852997A (ja) 1991-03-29 1996-02-27 Masaki Kawasaki 積層板構造の象嵌模様入り製品及びその製造方法
US5391441A (en) * 1992-02-21 1995-02-21 Hitachi, Ltd. Exposure mask and method of manufacture thereof
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6184083B1 (en) * 1997-06-30 2001-02-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JPH11260686A (ja) * 1998-03-11 1999-09-24 Toshiba Corp 露光方法
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000183346A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
JP3495983B2 (ja) * 2000-12-28 2004-02-09 キヤノン株式会社 マスク及び投影露光装置
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
CN101727021A (zh) * 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
WO2001002908A1 (en) * 1999-06-30 2001-01-11 Hitachi, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2001117213A (ja) 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法

Also Published As

Publication number Publication date
KR20110091015A (ko) 2011-08-10
US20070117409A1 (en) 2007-05-24
KR101118787B1 (ko) 2012-03-20
US8048614B2 (en) 2011-11-01
US20110229824A1 (en) 2011-09-22
JP4529141B2 (ja) 2010-08-25
WO2005076322A1 (ja) 2005-08-18
JP2010153922A (ja) 2010-07-08
KR20070019705A (ko) 2007-02-15
JPWO2005076322A1 (ja) 2008-02-21

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