KR101066974B1 - 플라즈마처리장치 및 플라즈마처리방법 - Google Patents

플라즈마처리장치 및 플라즈마처리방법 Download PDF

Info

Publication number
KR101066974B1
KR101066974B1 KR1020090074177A KR20090074177A KR101066974B1 KR 101066974 B1 KR101066974 B1 KR 101066974B1 KR 1020090074177 A KR1020090074177 A KR 1020090074177A KR 20090074177 A KR20090074177 A KR 20090074177A KR 101066974 B1 KR101066974 B1 KR 101066974B1
Authority
KR
South Korea
Prior art keywords
focus ring
high frequency
ring
bias power
frequency bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090074177A
Other languages
English (en)
Korean (ko)
Other versions
KR20100138687A (ko
Inventor
겐지 마에다
겐에츠 요코가와
도모유키 다무라
가즈유키 히로자네
다카마사 이치노
Original Assignee
가부시키가이샤 히다치 하이테크놀로지즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 하이테크놀로지즈 filed Critical 가부시키가이샤 히다치 하이테크놀로지즈
Publication of KR20100138687A publication Critical patent/KR20100138687A/ko
Application granted granted Critical
Publication of KR101066974B1 publication Critical patent/KR101066974B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090074177A 2009-06-24 2009-08-12 플라즈마처리장치 및 플라즈마처리방법 Expired - Fee Related KR101066974B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-149772 2009-06-24
JP2009149772A JP5357639B2 (ja) 2009-06-24 2009-06-24 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20100138687A KR20100138687A (ko) 2010-12-31
KR101066974B1 true KR101066974B1 (ko) 2011-09-22

Family

ID=43379587

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090074177A Expired - Fee Related KR101066974B1 (ko) 2009-06-24 2009-08-12 플라즈마처리장치 및 플라즈마처리방법

Country Status (3)

Country Link
US (1) US20100326957A1 (https=)
JP (1) JP5357639B2 (https=)
KR (1) KR101066974B1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140085568A (ko) * 2011-10-28 2014-07-07 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱에서 엣지 링의 열 관리
KR20170008138A (ko) * 2015-07-13 2017-01-23 램 리써치 코포레이션 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
KR20170062440A (ko) * 2014-09-30 2017-06-07 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
US8486221B2 (en) 2009-02-05 2013-07-16 Tokyo Electron Limited Focus ring heating method, plasma etching apparatus, and plasma etching method
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5732941B2 (ja) * 2011-03-16 2015-06-10 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6085079B2 (ja) * 2011-03-28 2017-02-22 東京エレクトロン株式会社 パターン形成方法、処理容器内の部材の温度制御方法、及び基板処理システム
JP5822578B2 (ja) * 2011-07-20 2015-11-24 東京エレクトロン株式会社 載置台温度制御装置及び基板処理装置
US20130107415A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
CN103377979B (zh) 2012-04-30 2016-06-08 细美事有限公司 调节板和具有该调节板的用于处理基板的装置
KR101974420B1 (ko) 2012-06-08 2019-05-02 세메스 주식회사 기판처리장치 및 방법
KR101955575B1 (ko) 2012-06-08 2019-03-08 세메스 주식회사 기판처리장치 및 방법
KR101974422B1 (ko) 2012-06-27 2019-05-02 세메스 주식회사 기판처리장치 및 방법
JP5982206B2 (ja) * 2012-07-17 2016-08-31 東京エレクトロン株式会社 下部電極、及びプラズマ処理装置
CN103972132B (zh) * 2013-01-24 2017-07-11 东京毅力科创株式会社 基板处理装置和载置台
JP6100564B2 (ja) * 2013-01-24 2017-03-22 東京エレクトロン株式会社 基板処理装置及び載置台
US9236305B2 (en) * 2013-01-25 2016-01-12 Applied Materials, Inc. Wafer dicing with etch chamber shield ring for film frame wafer applications
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5971144B2 (ja) * 2013-02-06 2016-08-17 東京エレクトロン株式会社 基板処理装置及び成膜方法
JP6173936B2 (ja) * 2013-02-28 2017-08-02 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102112368B1 (ko) 2013-02-28 2020-05-18 도쿄엘렉트론가부시키가이샤 탑재대 및 플라즈마 처리 장치
JP6027492B2 (ja) * 2013-05-22 2016-11-16 東京エレクトロン株式会社 エッチング方法及びエッチング装置
JP6224366B2 (ja) * 2013-07-12 2017-11-01 東京エレクトロン株式会社 支持部材及び基板処理装置
JP6083529B2 (ja) * 2013-09-02 2017-02-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
JP6442296B2 (ja) * 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
TWI603416B (zh) * 2014-07-08 2017-10-21 瓦特洛威電子製造公司 具有接合層之整合溫度感測技術的接合總成
US9530626B2 (en) * 2014-07-25 2016-12-27 Tokyo Electron Limited Method and apparatus for ESC charge control for wafer clamping
CN104269370B (zh) * 2014-09-01 2017-05-17 上海华力微电子有限公司 改善晶圆边缘缺陷的装置
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
SG11201703114QA (en) 2014-10-17 2017-06-29 Applied Materials Inc Cmp pad construction with composite material properties using additive manufacturing processes
JP5798677B2 (ja) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10109510B2 (en) * 2014-12-18 2018-10-23 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
US9909197B2 (en) * 2014-12-22 2018-03-06 Semes Co., Ltd. Supporting unit and substrate treating apparatus including the same
JP6346855B2 (ja) 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
JP6539113B2 (ja) 2015-05-28 2019-07-03 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
CN106856188B (zh) * 2015-12-08 2020-02-14 北京北方华创微电子装备有限公司 承载装置以及半导体加工设备
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10685862B2 (en) * 2016-01-22 2020-06-16 Applied Materials, Inc. Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
KR102604063B1 (ko) 2016-08-18 2023-11-21 삼성전자주식회사 정전 척 어셈블리 및 이를 포함하는 기판 처리 장치
US9922857B1 (en) 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
JP6340655B2 (ja) * 2017-01-10 2018-06-13 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6869034B2 (ja) * 2017-01-17 2021-05-12 東京エレクトロン株式会社 プラズマ処理装置
WO2018183245A1 (en) * 2017-03-31 2018-10-04 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
US10199252B2 (en) * 2017-06-30 2019-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal pad for etch rate uniformity
CN109216144B (zh) * 2017-07-03 2021-08-06 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
CN110770891B (zh) * 2017-10-30 2023-04-07 日本碍子株式会社 静电卡盘及其制法
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
CN115938902B (zh) * 2017-12-15 2024-10-29 朗姆研究公司 等离子体室中使用的环形结构和系统
JP7033907B2 (ja) * 2017-12-21 2022-03-11 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP7149068B2 (ja) 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
CN109994355B (zh) 2017-12-29 2021-11-02 中微半导体设备(上海)股份有限公司 一种具有低频射频功率分布调节功能的等离子反应器
KR20200039840A (ko) * 2018-01-22 2020-04-16 어플라이드 머티어리얼스, 인코포레이티드 전원식 에지 링을 이용한 프로세싱
US11848223B2 (en) 2018-02-20 2023-12-19 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device and method for producing electrostatic chuck device
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP7204350B2 (ja) * 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
US10847347B2 (en) * 2018-08-23 2020-11-24 Applied Materials, Inc. Edge ring assembly for a substrate support in a plasma processing chamber
KR20210042171A (ko) 2018-09-04 2021-04-16 어플라이드 머티어리얼스, 인코포레이티드 진보한 폴리싱 패드들을 위한 제형들
JP7140610B2 (ja) * 2018-09-06 2022-09-21 株式会社日立ハイテク プラズマ処理装置
JP7175160B2 (ja) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 基板処理装置
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング
JP7145042B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US11289310B2 (en) * 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
JP7254542B2 (ja) * 2019-02-01 2023-04-10 東京エレクトロン株式会社 載置台及び基板処理装置
KR102370471B1 (ko) * 2019-02-08 2022-03-03 주식회사 히타치하이테크 플라스마 처리 장치
JP2020155489A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
US11450545B2 (en) * 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
WO2020255319A1 (ja) 2019-06-20 2020-12-24 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
KR102200315B1 (ko) * 2019-07-29 2021-01-08 세메스 주식회사 기판 지지 장치 및 이를 포함하는 기판 처리 장치
JP7394556B2 (ja) * 2019-08-09 2023-12-08 東京エレクトロン株式会社 載置台及び基板処理装置
JP7365815B2 (ja) * 2019-08-09 2023-10-20 東京エレクトロン株式会社 載置台及び基板処理装置
CN112435912B (zh) * 2019-08-26 2023-09-29 中微半导体设备(上海)股份有限公司 等离子体处理装置
KR102335472B1 (ko) * 2019-09-04 2021-12-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
JP7373963B2 (ja) * 2019-10-01 2023-11-06 東京エレクトロン株式会社 基板支持器及びプラズマ処理装置
US12266511B2 (en) 2019-11-26 2025-04-01 Tokyo Electron Limited Substrate support and substrate processing apparatus
JP7563843B2 (ja) * 2019-11-26 2024-10-08 東京エレクトロン株式会社 載置台及び基板処理装置
US20210249233A1 (en) * 2019-12-18 2021-08-12 Hitachi High-Tech Corporation Plasma processing apparatus
JP7454961B2 (ja) * 2020-03-05 2024-03-25 東京エレクトロン株式会社 プラズマ処理装置
KR102827753B1 (ko) * 2020-04-07 2025-07-02 삼성디스플레이 주식회사 표시 장치의 제조방법
KR102495233B1 (ko) * 2020-07-03 2023-02-06 주식회사 동원파츠 정전척
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
JP7598225B2 (ja) * 2020-11-09 2024-12-11 日本放送協会 接合用治具、および接合方法
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
KR102889019B1 (ko) * 2020-11-25 2025-11-20 세메스 주식회사 에지 링 어셈블리 및 기판 처리 장치
CN114843165A (zh) * 2021-02-01 2022-08-02 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
CN115398602B (zh) * 2021-03-24 2025-02-21 株式会社日立高新技术 等离子处理装置以及等离子处理方法
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
JP7557429B2 (ja) * 2021-05-27 2024-09-27 東京エレクトロン株式会社 プラズマ処理装置
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
CN115565841B (zh) * 2021-07-02 2025-08-08 中微半导体设备(上海)股份有限公司 防止电弧放电的下电极组件、等离子体处理装置及方法
KR102895924B1 (ko) * 2021-07-28 2025-12-04 세메스 주식회사 기판 처리 장치
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
JPWO2023026908A1 (https=) * 2021-08-27 2023-03-02
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
JP7496343B2 (ja) * 2021-11-08 2024-06-06 日本碍子株式会社 ウエハ載置台
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
CN119013770B (zh) 2022-10-07 2025-11-14 东京毅力科创株式会社 基片处理系统和边缘环的安装方法
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法
CN120581420A (zh) * 2024-03-01 2025-09-02 北京北方华创微电子装备有限公司 射频聚焦装置、下电极结构及工艺腔室

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183038A (ja) 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
JP2006216822A (ja) 2005-02-04 2006-08-17 Hitachi High-Technologies Corp ウェハ処理装置およびウェハ処理方法
KR100889433B1 (ko) 2006-03-22 2009-03-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066007B2 (ja) * 1998-06-24 2000-07-17 株式会社日立製作所 プラズマ処理装置およびプラズマ処理方法
US20040261945A1 (en) * 2002-10-02 2004-12-30 Ensinger Kunststofftechnoligie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
JP2006319043A (ja) * 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
JP2007258500A (ja) * 2006-03-24 2007-10-04 Hitachi High-Technologies Corp 基板支持装置
JP2008251866A (ja) * 2007-03-30 2008-10-16 Hitachi High-Technologies Corp プラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183038A (ja) 1998-12-14 2000-06-30 Hitachi Ltd プラズマ処理装置
JP2006216822A (ja) 2005-02-04 2006-08-17 Hitachi High-Technologies Corp ウェハ処理装置およびウェハ処理方法
KR100889433B1 (ko) 2006-03-22 2009-03-23 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140085568A (ko) * 2011-10-28 2014-07-07 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱에서 엣지 링의 열 관리
KR102042612B1 (ko) * 2011-10-28 2019-11-08 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱에서 엣지 링의 열 관리
KR20170062440A (ko) * 2014-09-30 2017-06-07 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
KR102233920B1 (ko) 2014-09-30 2021-03-30 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
KR20170008138A (ko) * 2015-07-13 2017-01-23 램 리써치 코포레이션 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
KR102570642B1 (ko) 2015-07-13 2023-08-23 램 리써치 코포레이션 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
KR20230127181A (ko) * 2015-07-13 2023-08-31 램 리써치 코포레이션 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝
KR102749806B1 (ko) 2015-07-13 2025-01-03 램 리써치 코포레이션 에지-국부화된 이온 궤적 제어 및 플라즈마 동작을 통한 선단 에지 시스 및 웨이퍼 프로파일 튜닝

Also Published As

Publication number Publication date
JP5357639B2 (ja) 2013-12-04
KR20100138687A (ko) 2010-12-31
JP2011009351A (ja) 2011-01-13
US20100326957A1 (en) 2010-12-30

Similar Documents

Publication Publication Date Title
KR101066974B1 (ko) 플라즈마처리장치 및 플라즈마처리방법
JP7662489B2 (ja) 極めて均一性が高い加熱基板支持アセンブリ
CN115244679B (zh) 基板处理腔室中的处理套件的鞘与温度控制
US8520360B2 (en) Electrostatic chuck with wafer backside plasma assisted dechuck
JP6717985B2 (ja) ガス孔に開口縮小プラグを有する大電力静電チャック
US9412555B2 (en) Lower electrode assembly of plasma processing chamber
US8696862B2 (en) Substrate mounting table, substrate processing apparatus and substrate temperature control method
US20100203736A1 (en) Plasma Processing Method
KR102702944B1 (ko) 프로세스 키트의 시스 및 온도 제어
US20080090417A1 (en) Upper electrode backing member with particle reducing features
US20200395197A1 (en) Adjustable thermal break in a substrate support
JP2019500751A (ja) 静電チャック機構および半導体処理装置
CN1950545A (zh) 包括喷头电极和加热器的用于等离子处理的设备
US20090242133A1 (en) Electrode structure and substrate processing apparatus
US12074014B2 (en) Electrostatic chuck and processing apparatus
US11011405B2 (en) Apparatus for supporting substrate having gas supply hole and method of manufacturing same
KR102905674B1 (ko) 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
JP2005347400A (ja) 静電吸着装置およびプラズマ処理装置
KR20110083979A (ko) 플라즈마 처리 장치
KR102940415B1 (ko) 지지 유닛 및 기판 처리 장치
US11482444B2 (en) High temperature micro-zone electrostatic chuck
KR102956349B1 (ko) 포커스 링 및 이를 포함하는 기판 처리 장치
CN114695047A (zh) 静电吸盘、下电极组件及等离子体处理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140826

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150820

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170823

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180904

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190829

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230917

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230917

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000