KR101062986B1 - Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마 - Google Patents

Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마 Download PDF

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Publication number
KR101062986B1
KR101062986B1 KR1020057023921A KR20057023921A KR101062986B1 KR 101062986 B1 KR101062986 B1 KR 101062986B1 KR 1020057023921 A KR1020057023921 A KR 1020057023921A KR 20057023921 A KR20057023921 A KR 20057023921A KR 101062986 B1 KR101062986 B1 KR 101062986B1
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South Korea
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gate structure
slurry
gate
planarization
semiconductor device
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Expired - Fee Related
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KR1020057023921A
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English (en)
Korean (ko)
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KR20060020674A (ko
Inventor
크리스나슈리 아추싼
쉬블리 에스. 아흐메드
하이홍 왕
빈 유
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글로벌파운드리즈 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057023921A 2003-06-12 2004-06-05 Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마 Expired - Fee Related KR101062986B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/459,495 US6855607B2 (en) 2003-06-12 2003-06-12 Multi-step chemical mechanical polishing of a gate area in a FinFET
US10/459,495 2003-06-12
PCT/US2004/017724 WO2004112105A2 (en) 2003-06-12 2004-06-05 Multi-step chemical mechanical polishing of a gate area in a finfet

Publications (2)

Publication Number Publication Date
KR20060020674A KR20060020674A (ko) 2006-03-06
KR101062986B1 true KR101062986B1 (ko) 2011-09-07

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Application Number Title Priority Date Filing Date
KR1020057023921A Expired - Fee Related KR101062986B1 (ko) 2003-06-12 2004-06-05 Ｆｉｎｆｅｔ내의 게이트 영역의 다단계 화학 기계 연마

Country Status (8)

Country Link
US (2) US6855607B2 (https=)
JP (1) JP2007500456A (https=)
KR (1) KR101062986B1 (https=)
CN (1) CN1806318B (https=)
DE (1) DE112004001041B4 (https=)
GB (1) GB2419232B (https=)
TW (1) TWI353011B (https=)
WO (1) WO2004112105A2 (https=)

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US10153214B2 (en) 2016-01-15 2018-12-11 Samsung Electronics Co., Ltd. Patterning method and a method of fabricating a semiconductor device using the same

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US20040266115A1 (en) * 2003-06-25 2004-12-30 Bor-Wen Chan Method of making a gate electrode on a semiconductor device
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KR100655379B1 (ko) * 2005-11-25 2006-12-08 삼성전자주식회사 유효 출력 데이터 윈도우를 확장시킬 수 있는 출력회로,이를 구비한 반도체 메모리 장치, 및 유효 출력 데이터확장방법
CN101490822B (zh) * 2006-07-11 2011-03-16 Nxp股份有限公司 半导体器件及其制造方法
DE102006035667B4 (de) * 2006-07-31 2010-10-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Verbessern der Lithographieeigenschaften während der Gateherstellung in Halbleitern mit einer ausgeprägten Oberflächentopographie
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CN102117737B (zh) * 2009-12-30 2015-01-07 中国科学院微电子研究所 减小半导体器件中ler的方法及半导体器件
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US11037923B2 (en) * 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
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US10153214B2 (en) 2016-01-15 2018-12-11 Samsung Electronics Co., Ltd. Patterning method and a method of fabricating a semiconductor device using the same

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Publication number Publication date
US6855607B2 (en) 2005-02-15
DE112004001041B4 (de) 2010-04-29
WO2004112105A3 (en) 2005-02-24
US7125776B2 (en) 2006-10-24
GB2419232A (en) 2006-04-19
TWI353011B (en) 2011-11-21
KR20060020674A (ko) 2006-03-06
CN1806318B (zh) 2010-05-12
GB0526386D0 (en) 2006-02-08
DE112004001041T5 (de) 2006-04-20
JP2007500456A (ja) 2007-01-11
GB2419232B (en) 2007-01-17
TW200520081A (en) 2005-06-16
WO2004112105A2 (en) 2004-12-23
CN1806318A (zh) 2006-07-19
US20050118824A1 (en) 2005-06-02
US20040253775A1 (en) 2004-12-16

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