GB2419232B - Multi-step chemical mechanical polishing of a gate area in a finfet - Google Patents

Multi-step chemical mechanical polishing of a gate area in a finfet

Info

Publication number
GB2419232B
GB2419232B GB0526386A GB0526386A GB2419232B GB 2419232 B GB2419232 B GB 2419232B GB 0526386 A GB0526386 A GB 0526386A GB 0526386 A GB0526386 A GB 0526386A GB 2419232 B GB2419232 B GB 2419232B
Authority
GB
United Kingdom
Prior art keywords
finfet
mechanical polishing
chemical mechanical
gate area
step chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0526386A
Other languages
English (en)
Other versions
GB2419232A (en
GB0526386D0 (en
Inventor
Krishnashree Achuthan
Shibly S Ahmed
Haihong Wang
Bin Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0526386D0 publication Critical patent/GB0526386D0/en
Publication of GB2419232A publication Critical patent/GB2419232A/en
Application granted granted Critical
Publication of GB2419232B publication Critical patent/GB2419232B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0243—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/959—Mechanical polishing of wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
GB0526386A 2003-06-12 2004-06-05 Multi-step chemical mechanical polishing of a gate area in a finfet Expired - Fee Related GB2419232B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/459,495 US6855607B2 (en) 2003-06-12 2003-06-12 Multi-step chemical mechanical polishing of a gate area in a FinFET
PCT/US2004/017724 WO2004112105A2 (en) 2003-06-12 2004-06-05 Multi-step chemical mechanical polishing of a gate area in a finfet

Publications (3)

Publication Number Publication Date
GB0526386D0 GB0526386D0 (en) 2006-02-08
GB2419232A GB2419232A (en) 2006-04-19
GB2419232B true GB2419232B (en) 2007-01-17

Family

ID=33510825

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0526386A Expired - Fee Related GB2419232B (en) 2003-06-12 2004-06-05 Multi-step chemical mechanical polishing of a gate area in a finfet

Country Status (8)

Country Link
US (2) US6855607B2 (https=)
JP (1) JP2007500456A (https=)
KR (1) KR101062986B1 (https=)
CN (1) CN1806318B (https=)
DE (1) DE112004001041B4 (https=)
GB (1) GB2419232B (https=)
TW (1) TWI353011B (https=)
WO (1) WO2004112105A2 (https=)

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CN101490822B (zh) * 2006-07-11 2011-03-16 Nxp股份有限公司 半导体器件及其制造方法
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CN102117737B (zh) * 2009-12-30 2015-01-07 中国科学院微电子研究所 减小半导体器件中ler的方法及半导体器件
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US9006107B2 (en) 2012-03-11 2015-04-14 United Microelectronics Corp. Patterned structure of semiconductor device and fabricating method thereof
US9142649B2 (en) 2012-04-23 2015-09-22 United Microelectronics Corp. Semiconductor structure with metal gate and method of fabricating the same
US11037923B2 (en) * 2012-06-29 2021-06-15 Intel Corporation Through gate fin isolation
US8501636B1 (en) 2012-07-24 2013-08-06 United Microelectronics Corp. Method for fabricating silicon dioxide layer
US9064931B2 (en) 2012-10-11 2015-06-23 United Microelectronics Corp. Semiconductor structure having contact plug and metal gate transistor and method of making the same
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KR102003276B1 (ko) 2013-02-14 2019-07-24 삼성전자 주식회사 반도체 소자 제조 방법
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CN104051248B (zh) * 2013-03-13 2017-03-22 中芯国际集成电路制造(上海)有限公司 栅极的形成方法
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Also Published As

Publication number Publication date
US6855607B2 (en) 2005-02-15
DE112004001041B4 (de) 2010-04-29
WO2004112105A3 (en) 2005-02-24
US7125776B2 (en) 2006-10-24
KR101062986B1 (ko) 2011-09-07
GB2419232A (en) 2006-04-19
TWI353011B (en) 2011-11-21
KR20060020674A (ko) 2006-03-06
CN1806318B (zh) 2010-05-12
GB0526386D0 (en) 2006-02-08
DE112004001041T5 (de) 2006-04-20
JP2007500456A (ja) 2007-01-11
TW200520081A (en) 2005-06-16
WO2004112105A2 (en) 2004-12-23
CN1806318A (zh) 2006-07-19
US20050118824A1 (en) 2005-06-02
US20040253775A1 (en) 2004-12-16

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Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20110605