KR101038548B1 - 웨이퍼 연삭 장치 및 웨이퍼 연삭 장치용 가공 품질 판정 방법 - Google Patents
웨이퍼 연삭 장치 및 웨이퍼 연삭 장치용 가공 품질 판정 방법 Download PDFInfo
- Publication number
- KR101038548B1 KR101038548B1 KR1020080109572A KR20080109572A KR101038548B1 KR 101038548 B1 KR101038548 B1 KR 101038548B1 KR 1020080109572 A KR1020080109572 A KR 1020080109572A KR 20080109572 A KR20080109572 A KR 20080109572A KR 101038548 B1 KR101038548 B1 KR 101038548B1
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- South Korea
- Prior art keywords
- wafer
- grinding
- thickness
- machining
- transfer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000003754 machining Methods 0.000 title claims abstract description 27
- 238000012546 transfer Methods 0.000 claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 238000012544 monitoring process Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 104
- 230000007547 defect Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
Claims (3)
- 연삭 수단을 이송하여 웨이퍼의 배면을 압박하여, 웨이퍼의 배면을 연삭하는 웨이퍼 연삭 장치용 가공 품질 판정 방법으로서,웨이퍼 연삭 공정을 모니터할 때에, 상기 연삭 수단의 이송량으로부터 상기 웨이퍼의 두께를 도출하는 동시에, 상기 웨이퍼의 두께를 실측하고,상기 연삭 수단의 이송량을 기초로 하는 웨이퍼 두께와 실측한 웨이퍼 두께를 비교하여, 상기 웨이퍼 연삭면의 가공 품질을 판정하고, 가공 불량으로 판정되는 경우에는 배면 연삭 공정을 정지시키는 명령이 발송되는 것을 특징으로 하는 웨이퍼 연삭 장치용 가공 품질 판정 방법.
- 제1항에 있어서, 접촉식 센서를 기초로 하는 접촉식 웨이퍼 두께 검출 수단에 의해 웨이퍼 두께를 검출하는 것을 특징으로 하는 웨이퍼 연삭 장치용 가공 품질 판정 방법.
- 웨이퍼 연삭 장치로서,웨이퍼를 파지하고 연삭하는 연삭 수단과;연삭 공정을 위해 연삭 수단을 이송하는 이송 수단과;웨이퍼의 두께를 실측하는 검출 수단과;상기 이송 수단에 의한 연삭 수단의 이송 위치를 모니터링하는 동시에, 상기 연삭 수단의 이송량을 계산하는 산술 수단과;상기 이송량을 기초로 하여, 이송량에 대응하는 웨이퍼의 두께를 도출하는 취득 수단과;이송량에 대응하는 웨이퍼 두께와 상기 검출 수단으로부터 전송된 실측된 웨이퍼 두께를 비교하여, 웨이퍼 연삭면의 가공 품질을 판정하고, 가공 불량으로 판정된 때에는 연삭 공정을 정지시키는 명령을 발송하는 가공 품질 판정 수단을 포함하는 것을 특징으로 하는 웨이퍼 연삭 가공 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2008-074009 | 2008-03-21 | ||
JP2008074009A JP5219569B2 (ja) | 2008-03-21 | 2008-03-21 | ウェーハ研削装置における加工良否判定方法およびウェーハ研削装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090101058A KR20090101058A (ko) | 2009-09-24 |
KR101038548B1 true KR101038548B1 (ko) | 2011-06-02 |
Family
ID=41060731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080109572A KR101038548B1 (ko) | 2008-03-21 | 2008-11-05 | 웨이퍼 연삭 장치 및 웨이퍼 연삭 장치용 가공 품질 판정 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8055374B2 (ko) |
JP (1) | JP5219569B2 (ko) |
KR (1) | KR101038548B1 (ko) |
DE (1) | DE102008060199A1 (ko) |
SG (1) | SG155825A1 (ko) |
TW (1) | TWI411030B (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5311858B2 (ja) * | 2008-03-27 | 2013-10-09 | 株式会社東京精密 | ウェーハの研削方法並びにウェーハ研削装置 |
JP5761943B2 (ja) * | 2010-03-25 | 2015-08-12 | 株式会社東京精密 | 仕上研削装置および仕上研削方法 |
JP6388545B2 (ja) * | 2015-01-16 | 2018-09-12 | 株式会社ディスコ | 被加工物の研削方法 |
JP6719825B2 (ja) * | 2016-10-12 | 2020-07-08 | 株式会社ディスコ | 研削装置及びウェーハの加工方法 |
JP7242141B2 (ja) * | 2019-06-24 | 2023-03-20 | 株式会社ディスコ | 被加工物の加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030071712A (ko) * | 2003-08-16 | 2003-09-06 | 이민웅 | 이차원 기반의 오프라인 매장식 삼차원 온라인 쇼핑몰운영 방법 및 그 시스템 |
JP2005342841A (ja) | 2004-06-03 | 2005-12-15 | Renesas Technology Corp | 研磨装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4316313C1 (de) * | 1993-05-15 | 1994-12-08 | Alexander Bromme | Verfahren und Anordnung zur Qualitätsüberwachung des Schleifprozesses |
JPH074460U (ja) * | 1993-06-22 | 1995-01-24 | 鐘紡株式会社 | 封凾機のテープ貼り不良検出装置 |
AU4673797A (en) * | 1996-10-04 | 1998-04-24 | Exclusive Design Company, Inc. | A method and system for controlling chemical mechanical polishing thickness removal |
SG97860A1 (en) * | 1999-03-05 | 2003-08-20 | Ebara Corp | Polishing apparatus |
US6159075A (en) * | 1999-10-13 | 2000-12-12 | Vlsi Technology, Inc. | Method and system for in-situ optimization for semiconductor wafers in a chemical mechanical polishing process |
JP2001198794A (ja) * | 2000-01-21 | 2001-07-24 | Ebara Corp | 研磨装置 |
JP4687838B2 (ja) | 2000-04-04 | 2011-05-25 | 株式会社ディスコ | 半導体チップの製造方法 |
JP4721574B2 (ja) | 2001-08-29 | 2011-07-13 | 株式会社ディスコ | 研削装置の原点位置設定機構 |
US7037184B2 (en) * | 2003-01-22 | 2006-05-02 | Raytech Innovation Solutions, Llc | Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same |
JP2003338479A (ja) * | 2002-05-20 | 2003-11-28 | Tokyo Seimitsu Co Ltd | 半導体ウェーハの加工装置 |
JP4338458B2 (ja) * | 2003-06-30 | 2009-10-07 | コマツ工機株式会社 | 研削加工装置及び研削加工方法 |
US7150673B2 (en) | 2004-07-09 | 2006-12-19 | Ebara Corporation | Method for estimating polishing profile or polishing amount, polishing method and polishing apparatus |
JP4576503B2 (ja) * | 2004-07-30 | 2010-11-10 | 株式会社不二越 | 平面研削方法 |
JP4712555B2 (ja) | 2005-12-28 | 2011-06-29 | 株式会社ディスコ | 研磨装置 |
JP2007301665A (ja) | 2006-05-10 | 2007-11-22 | Disco Abrasive Syst Ltd | 研削ホイールおよびその製造方法 |
JP4913481B2 (ja) | 2006-06-12 | 2012-04-11 | 株式会社ディスコ | ウエーハ研削装置 |
DE102007015503B4 (de) * | 2007-03-30 | 2013-03-21 | Globalfoundries Inc. | Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch Berücksichtigung zonenspezifischer Substratdaten |
-
2008
- 2008-03-21 JP JP2008074009A patent/JP5219569B2/ja not_active Expired - Fee Related
- 2008-10-31 SG SG200808159-8A patent/SG155825A1/en unknown
- 2008-11-05 KR KR1020080109572A patent/KR101038548B1/ko active IP Right Grant
- 2008-11-11 TW TW097143537A patent/TWI411030B/zh not_active IP Right Cessation
- 2008-12-03 DE DE102008060199A patent/DE102008060199A1/de not_active Ceased
-
2009
- 2009-02-12 US US12/370,454 patent/US8055374B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030071712A (ko) * | 2003-08-16 | 2003-09-06 | 이민웅 | 이차원 기반의 오프라인 매장식 삼차원 온라인 쇼핑몰운영 방법 및 그 시스템 |
JP2005342841A (ja) | 2004-06-03 | 2005-12-15 | Renesas Technology Corp | 研磨装置 |
Also Published As
Publication number | Publication date |
---|---|
JP5219569B2 (ja) | 2013-06-26 |
KR20090101058A (ko) | 2009-09-24 |
JP2009231475A (ja) | 2009-10-08 |
TW200941569A (en) | 2009-10-01 |
TWI411030B (zh) | 2013-10-01 |
US8055374B2 (en) | 2011-11-08 |
DE102008060199A1 (de) | 2009-10-15 |
SG155825A1 (en) | 2009-10-29 |
US20090239448A1 (en) | 2009-09-24 |
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