KR101023034B1 - 절연체상 실리콘 구조 및 방법 - Google Patents

절연체상 실리콘 구조 및 방법 Download PDF

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KR101023034B1
KR101023034B1 KR1020047017791A KR20047017791A KR101023034B1 KR 101023034 B1 KR101023034 B1 KR 101023034B1 KR 1020047017791 A KR1020047017791 A KR 1020047017791A KR 20047017791 A KR20047017791 A KR 20047017791A KR 101023034 B1 KR101023034 B1 KR 101023034B1
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insulator
layer
semiconductor
epitaxial
forming
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KR20050007472A (ko
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크리스워크호벤
이보라이즈마커
찬탈아레나
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에이에스엠 아메리카, 인코포레이티드
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020047017791A 2002-05-07 2003-05-07 절연체상 실리콘 구조 및 방법 Expired - Lifetime KR101023034B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37886802P 2002-05-07 2002-05-07
US60/378,868 2002-05-07
US45501803P 2003-03-12 2003-03-12
US60/455,018 2003-03-12
PCT/US2003/014314 WO2003096385A2 (en) 2002-05-07 2003-05-07 Silicon-on-insulator structures and methods

Publications (2)

Publication Number Publication Date
KR20050007472A KR20050007472A (ko) 2005-01-18
KR101023034B1 true KR101023034B1 (ko) 2011-03-24

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KR1020047017791A Expired - Lifetime KR101023034B1 (ko) 2002-05-07 2003-05-07 절연체상 실리콘 구조 및 방법

Country Status (5)

Country Link
US (1) US7452757B2 (enExample)
EP (1) EP1502285A2 (enExample)
JP (1) JP4951202B2 (enExample)
KR (1) KR101023034B1 (enExample)
WO (1) WO2003096385A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR102871969B1 (ko) 2024-05-14 2025-10-15 연세대학교 산학협력단 결정성 채널층을 포함하는 반도체 소자 및 이의 제조방법

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