KR100997180B1 - 에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물 - Google Patents

에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물 Download PDF

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Publication number
KR100997180B1
KR100997180B1 KR1020047017155A KR20047017155A KR100997180B1 KR 100997180 B1 KR100997180 B1 KR 100997180B1 KR 1020047017155 A KR1020047017155 A KR 1020047017155A KR 20047017155 A KR20047017155 A KR 20047017155A KR 100997180 B1 KR100997180 B1 KR 100997180B1
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KR
South Korea
Prior art keywords
substrate
plasma etch
composition
etch residue
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047017155A
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English (en)
Korean (ko)
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KR20040104622A (ko
Inventor
빈센트 쥐. 레온
미쉘 엘더킨
로렌스 페레라
Original Assignee
아치 스페셜티 케미칼즈, 인코포레이티드
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Publication of KR20040104622A publication Critical patent/KR20040104622A/ko
Application granted granted Critical
Publication of KR100997180B1 publication Critical patent/KR100997180B1/ko
Assigned to 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. reassignment 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 권리의 전부이전등록 Assignors: 아치 스페셜티 케미칼즈, 인코포레이티드
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
KR1020047017155A 2002-04-25 2003-04-24 에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물 Expired - Fee Related KR100997180B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37561302P 2002-04-25 2002-04-25
US60/375,613 2002-04-25
PCT/US2003/012486 WO2003091377A1 (en) 2002-04-25 2003-04-24 Non-corrosive cleaning compositions for removing etch residues

Publications (2)

Publication Number Publication Date
KR20040104622A KR20040104622A (ko) 2004-12-10
KR100997180B1 true KR100997180B1 (ko) 2010-11-29

Family

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Family Applications (1)

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KR1020047017155A Expired - Fee Related KR100997180B1 (ko) 2002-04-25 2003-04-24 에치 잔여물질을 제거하기 위한 비-부식성 세척 조성물

Country Status (8)

Country Link
US (1) US7935665B2 (https=)
EP (1) EP1501916B1 (https=)
JP (1) JP4634718B2 (https=)
KR (1) KR100997180B1 (https=)
AT (1) ATE434033T1 (https=)
DE (1) DE60328014D1 (https=)
TW (1) TWI297725B (https=)
WO (1) WO2003091377A1 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084070B1 (en) * 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
TWI365491B (en) * 2003-12-24 2012-06-01 Kao Corp Composition for cleaning semiconductor device
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
US7268071B2 (en) 2005-01-12 2007-09-11 Sony Corporation Dual damascene interconnections having low K layer with reduced damage arising from photoresist stripping
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
EP1721961B1 (en) * 2005-05-12 2009-04-22 The Procter and Gamble Company Liquid acidic hard surface cleaning composition
EP1721960A1 (en) 2005-05-12 2006-11-15 The Procter & Gamble Company Liquid acidic hard surface cleaning composition
KR101304622B1 (ko) * 2006-08-29 2013-09-05 동우 화인켐 주식회사 세정제 조성물
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP5232381B2 (ja) * 2006-11-28 2013-07-10 株式会社ネオス ノンリンス型水溶性洗浄剤組成物
US8178078B2 (en) 2008-06-13 2012-05-15 S.C. Johnson & Son, Inc. Compositions containing a solvated active agent suitable for dispensing as a compressed gas aerosol
CN102132385B (zh) * 2008-08-25 2015-02-18 大金工业株式会社 半导体干式工艺后的残渣除去液和使用该除去液的残渣除去方法
WO2010127943A1 (en) * 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
KR20110016418A (ko) 2009-08-11 2011-02-17 동우 화인켐 주식회사 레지스트 박리액 조성물 및 이를 이용한 레지스트의 박리방법
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
JP5513196B2 (ja) 2010-03-25 2014-06-04 富士フイルム株式会社 洗浄組成物及び半導体装置の製造方法
US20120090648A1 (en) * 2010-10-15 2012-04-19 United Microelectronics Corp. Cleaning method for semiconductor wafer and cleaning device for semiconductor wafer
KR101830170B1 (ko) * 2011-05-17 2018-02-21 삼성디스플레이 주식회사 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000319699A (ja) 1999-05-07 2000-11-21 Tama Kagaku Kogyo Kk 精密洗浄剤組成物

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003898A (en) 1960-08-10 1961-10-10 Dow Chemical Co Scale removal
US3166444A (en) 1962-04-26 1965-01-19 Lubrizol Corp Method for cleaning metal articles
US3696044A (en) 1970-07-02 1972-10-03 Atlas Chem Ind Sequestrant compositions
US4264418A (en) 1978-09-19 1981-04-28 Kilene Corp. Method for detersifying and oxide coating removal
CA1242130A (en) 1983-04-12 1988-09-20 Silverio M. Garcia Acidic compositions having ph values of less than about 1 and method for producing same
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5909742A (en) 1993-03-26 1999-06-08 Betzdearborn Inc. Metal cleaning method
US5977054A (en) * 1993-09-01 1999-11-02 The Procter & Gamble Company Mildly acidic hard surface cleaning compositions containing amine oxide detergent surfactants
JP2731730B2 (ja) 1993-12-22 1998-03-25 インターナショナル・ビジネス・マシーンズ・コーポレイション フォトレジストの除去方法
JPH07286172A (ja) * 1994-04-20 1995-10-31 Asahi Glass Co Ltd エッチング液およびエッチング方法
US6221823B1 (en) 1995-10-25 2001-04-24 Reckitt Benckiser Inc. Germicidal, acidic hard surface cleaning compositions
US6410494B2 (en) 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
TW416987B (en) 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
US6323168B1 (en) 1996-07-03 2001-11-27 Advanced Technology Materials, Inc. Post plasma ashing wafer cleaning formulation
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6265781B1 (en) 1996-10-19 2001-07-24 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers, methods for making metallization structures, and the structures resulting from these methods
US6268323B1 (en) 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
US6033993A (en) * 1997-09-23 2000-03-07 Olin Microelectronic Chemicals, Inc. Process for removing residues from a semiconductor substrate
US5977041A (en) 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
GB2329901A (en) 1997-09-30 1999-04-07 Reckitt & Colman Inc Acidic hard surface cleaning and disinfecting compositions
TW396446B (en) 1997-11-27 2000-07-01 Toshiba Corp Method for the production of a and a cleanser semiconductor device
US6231677B1 (en) 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
US6635562B2 (en) 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
JP3436346B2 (ja) 1998-09-16 2003-08-11 宏 徳武 衣料用洗剤組成物
US6147002A (en) 1999-05-26 2000-11-14 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
IL146733A (en) * 1999-05-26 2005-07-25 Air Prod & Chem Process for removing contaminant from a surface and composition useful therefor
US6361712B1 (en) 1999-10-15 2002-03-26 Arch Specialty Chemicals, Inc. Composition for selective etching of oxides over metals
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
US6231678B1 (en) 1999-12-30 2001-05-15 Alcoa Inc. Chemical delacquering process
US6419755B1 (en) 1999-12-30 2002-07-16 Alcoa Inc. Chemical delacquering process
US6498131B1 (en) * 2000-08-07 2002-12-24 Ekc Technology, Inc. Composition for cleaning chemical mechanical planarization apparatus
US6503334B2 (en) 2001-03-14 2003-01-07 Hydrochem Industrial Services, Inc. Forced mist cleaning of combustion turbines
US6627546B2 (en) 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6585826B2 (en) 2001-11-02 2003-07-01 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles
CN1441043A (zh) 2002-02-06 2003-09-10 希普利公司 清洁用组合物
JP2005535784A (ja) 2002-08-19 2005-11-24 伊默克化學科技股▲ふん▼有限公司 清浄液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000319699A (ja) 1999-05-07 2000-11-21 Tama Kagaku Kogyo Kk 精密洗浄剤組成物

Also Published As

Publication number Publication date
KR20040104622A (ko) 2004-12-10
ATE434033T1 (de) 2009-07-15
EP1501916A4 (en) 2005-09-14
US20030235996A1 (en) 2003-12-25
DE60328014D1 (de) 2009-07-30
TWI297725B (en) 2008-06-11
JP2005532423A (ja) 2005-10-27
TW200307742A (en) 2003-12-16
EP1501916B1 (en) 2009-06-17
WO2003091377A1 (en) 2003-11-06
JP4634718B2 (ja) 2011-02-16
US7935665B2 (en) 2011-05-03
EP1501916A1 (en) 2005-02-02

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