KR100970599B1 - 실시간 측광 보고 기능을 가진 이미지 센서 요소 또는 센서어레이를 위한 시스템 및 방법 - Google Patents
실시간 측광 보고 기능을 가진 이미지 센서 요소 또는 센서어레이를 위한 시스템 및 방법 Download PDFInfo
- Publication number
- KR100970599B1 KR100970599B1 KR1020087009532A KR20087009532A KR100970599B1 KR 100970599 B1 KR100970599 B1 KR 100970599B1 KR 1020087009532 A KR1020087009532 A KR 1020087009532A KR 20087009532 A KR20087009532 A KR 20087009532A KR 100970599 B1 KR100970599 B1 KR 100970599B1
- Authority
- KR
- South Korea
- Prior art keywords
- pixels
- pixel
- report
- exposure
- reports
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/64—Analogue/digital converters with intermediate conversion to phase of sinusoidal or similar periodical signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/51—Control of the gain
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Studio Devices (AREA)
- Analogue/Digital Conversion (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71930605P | 2005-09-21 | 2005-09-21 | |
| US71930405P | 2005-09-21 | 2005-09-21 | |
| US71930505P | 2005-09-21 | 2005-09-21 | |
| US60/719,305 | 2005-09-21 | ||
| US60/719,306 | 2005-09-21 | ||
| US60/719,304 | 2005-09-21 | ||
| US72789705P | 2005-10-18 | 2005-10-18 | |
| US60/727,897 | 2005-10-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080050515A KR20080050515A (ko) | 2008-06-05 |
| KR100970599B1 true KR100970599B1 (ko) | 2010-07-16 |
Family
ID=37889530
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087009556A Expired - Fee Related KR101152859B1 (ko) | 2005-09-21 | 2006-09-21 | 높은 동적 범위의 감지 센서 소자 또는 배열을 위한 시스템및 방법 |
| KR1020087009532A Expired - Fee Related KR100970599B1 (ko) | 2005-09-21 | 2006-09-21 | 실시간 측광 보고 기능을 가진 이미지 센서 요소 또는 센서어레이를 위한 시스템 및 방법 |
| KR1020087009542A Expired - Fee Related KR101003054B1 (ko) | 2005-09-21 | 2006-09-21 | 고 분해능 및 넓은 동작범위의 적분기 |
| KR1020087009554A Expired - Fee Related KR100972551B1 (ko) | 2005-09-21 | 2006-09-21 | 이득 제어 기능을 갖는 높은 동적 범위의 감지 센서 소자또는 배열을 위한 시스템 및 방법 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087009556A Expired - Fee Related KR101152859B1 (ko) | 2005-09-21 | 2006-09-21 | 높은 동적 범위의 감지 센서 소자 또는 배열을 위한 시스템및 방법 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087009542A Expired - Fee Related KR101003054B1 (ko) | 2005-09-21 | 2006-09-21 | 고 분해능 및 넓은 동작범위의 적분기 |
| KR1020087009554A Expired - Fee Related KR100972551B1 (ko) | 2005-09-21 | 2006-09-21 | 이득 제어 기능을 갖는 높은 동적 범위의 감지 센서 소자또는 배열을 위한 시스템 및 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US7800669B2 (enExample) |
| EP (4) | EP1938584A4 (enExample) |
| JP (4) | JP5059767B2 (enExample) |
| KR (4) | KR101152859B1 (enExample) |
| WO (4) | WO2007035860A2 (enExample) |
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| JP5059767B2 (ja) * | 2005-09-21 | 2012-10-31 | アール・ジェイ・エス・テクノロジー・インコーポレイテッド | 高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 |
| DE102007036973A1 (de) * | 2007-02-24 | 2008-09-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Pixelzelle, Verfahren zum Betreiben einer Pixelzelle, Verfahren zum Bestimmen einer Position eines Maximums einer Hüllkurve eines analogen amplituden-modulierten Signals, Vorrichtung zum Bestimmen einer Ladungsmenge, Vorrichtung und Verfahren zum Bestimmen einer Ladungsmenge auf einem kapazitiven Element, Vorrichtung und Verfahren und Setzen eines Schaltungsknotens auf eine vorbestimmte Spannung, Vorrichtung und Verfahren zum ladungsbasierten analog-/digital-Wandeln und Vorrichtung und Verfahren zur ladungsbasierten Signalverarbeitung |
| WO2010016449A1 (en) * | 2008-08-08 | 2010-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
| WO2011086829A1 (en) | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2012093387A2 (en) * | 2011-01-09 | 2012-07-12 | Emza Visual Sense Ltd. | Pixel design with temporal analysis capabilities for scene interpretation |
| US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
| WO2013123133A1 (en) * | 2012-02-14 | 2013-08-22 | Gentex Corporation | High dynamic range imager system |
| JP6041500B2 (ja) * | 2012-03-01 | 2016-12-07 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法、撮像システムの駆動方法 |
| US9210304B2 (en) | 2012-03-16 | 2015-12-08 | Empire Technology Development Llc | Low light adaptive imaging device |
| KR101895415B1 (ko) | 2012-03-27 | 2018-09-06 | 삼성전자주식회사 | 아날로그-디지털 변환 회로와 이를 포함하는 적산 회로 |
| US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
| US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
| US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
| US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
| US9347890B2 (en) | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| TWI611282B (zh) * | 2017-01-03 | 2018-01-11 | 友達光電股份有限公司 | 電源供應電路及電源供應方法 |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
| TWI840098B (zh) * | 2022-04-11 | 2024-04-21 | 義明科技股份有限公司 | 高感度的光感測器及其感測方法 |
| CN117490838B (zh) * | 2024-01-03 | 2024-03-19 | 成都善思微科技有限公司 | 一种高可靠性的平板探测器数据采集方法、系统及计算机 |
| CN120445398B (zh) * | 2025-07-02 | 2025-09-26 | 南京大学 | 基于复合介质栅双晶体管光敏探测器的感算一体方法 |
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| JP5059767B2 (ja) * | 2005-09-21 | 2012-10-31 | アール・ジェイ・エス・テクノロジー・インコーポレイテッド | 高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 |
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| US6809358B2 (en) * | 2002-02-05 | 2004-10-26 | E-Phocus, Inc. | Photoconductor on active pixel image sensor |
| KR20050055044A (ko) * | 2002-11-07 | 2005-06-10 | 롬 가부시키가이샤 | 에리어 이미지 센서 |
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