JP5059767B2 - 高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 - Google Patents
高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 Download PDFInfo
- Publication number
- JP5059767B2 JP5059767B2 JP2008532377A JP2008532377A JP5059767B2 JP 5059767 B2 JP5059767 B2 JP 5059767B2 JP 2008532377 A JP2008532377 A JP 2008532377A JP 2008532377 A JP2008532377 A JP 2008532377A JP 5059767 B2 JP5059767 B2 JP 5059767B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- phase
- output
- frequency
- photosensitive element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/64—Analogue/digital converters with intermediate conversion to phase of sinusoidal or similar periodical signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/71—Circuitry for evaluating the brightness variation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/51—Control of the gain
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Analogue/Digital Conversion (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71930605P | 2005-09-21 | 2005-09-21 | |
| US71930405P | 2005-09-21 | 2005-09-21 | |
| US71930505P | 2005-09-21 | 2005-09-21 | |
| US60/719,305 | 2005-09-21 | ||
| US60/719,306 | 2005-09-21 | ||
| US60/719,304 | 2005-09-21 | ||
| US72789705P | 2005-10-18 | 2005-10-18 | |
| US60/727,897 | 2005-10-18 | ||
| PCT/US2006/036794 WO2007035861A2 (en) | 2005-09-21 | 2006-09-21 | System and method for a high dynamic range sensitive sensor element or array |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009509475A JP2009509475A (ja) | 2009-03-05 |
| JP2009509475A5 JP2009509475A5 (enExample) | 2010-02-04 |
| JP5059767B2 true JP5059767B2 (ja) | 2012-10-31 |
Family
ID=37889530
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008532376A Expired - Fee Related JP4699524B2 (ja) | 2005-09-21 | 2006-09-21 | 測光およびリアルタイムのレポート能力を有する画像センサ素子またはアレイのためのシステムおよび方法 |
| JP2008532372A Active JP5242399B2 (ja) | 2005-09-21 | 2006-09-21 | ゲインを制御した高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 |
| JP2008532377A Expired - Fee Related JP5059767B2 (ja) | 2005-09-21 | 2006-09-21 | 高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 |
| JP2008532373A Expired - Fee Related JP4537483B2 (ja) | 2005-09-21 | 2006-09-21 | 高分解能および広ダイナミックレンジ積分器 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008532376A Expired - Fee Related JP4699524B2 (ja) | 2005-09-21 | 2006-09-21 | 測光およびリアルタイムのレポート能力を有する画像センサ素子またはアレイのためのシステムおよび方法 |
| JP2008532372A Active JP5242399B2 (ja) | 2005-09-21 | 2006-09-21 | ゲインを制御した高ダイナミックレンジ感度センサ素子またはアレイのためのシステムおよび方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008532373A Expired - Fee Related JP4537483B2 (ja) | 2005-09-21 | 2006-09-21 | 高分解能および広ダイナミックレンジ積分器 |
Country Status (5)
| Country | Link |
|---|---|
| US (5) | US7532145B2 (enExample) |
| EP (4) | EP1938584A4 (enExample) |
| JP (4) | JP4699524B2 (enExample) |
| KR (4) | KR100972551B1 (enExample) |
| WO (4) | WO2007035858A2 (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1938584A4 (en) * | 2005-09-21 | 2009-09-30 | Technology Inc Rjs | INTEGRATED WIDE DYNAMIC RANGE AND HIGH RESOLUTION |
| DE102007036973A1 (de) | 2007-02-24 | 2008-09-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Pixelzelle, Verfahren zum Betreiben einer Pixelzelle, Verfahren zum Bestimmen einer Position eines Maximums einer Hüllkurve eines analogen amplituden-modulierten Signals, Vorrichtung zum Bestimmen einer Ladungsmenge, Vorrichtung und Verfahren zum Bestimmen einer Ladungsmenge auf einem kapazitiven Element, Vorrichtung und Verfahren und Setzen eines Schaltungsknotens auf eine vorbestimmte Spannung, Vorrichtung und Verfahren zum ladungsbasierten analog-/digital-Wandeln und Vorrichtung und Verfahren zur ladungsbasierten Signalverarbeitung |
| WO2010016449A1 (en) * | 2008-08-08 | 2010-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
| KR101733755B1 (ko) | 2010-01-15 | 2017-05-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| EP2664130B1 (en) | 2011-01-09 | 2021-12-29 | Emza Visual Sense Ltd. | Pixel design with temporal analysis capabilities for scene interpretation |
| US10197501B2 (en) | 2011-12-12 | 2019-02-05 | Kla-Tencor Corporation | Electron-bombarded charge-coupled device and inspection systems using EBCCD detectors |
| US9041838B2 (en) | 2012-02-14 | 2015-05-26 | Gentex Corporation | High dynamic range imager system |
| JP6041500B2 (ja) * | 2012-03-01 | 2016-12-07 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法、撮像システムの駆動方法 |
| US9210304B2 (en) | 2012-03-16 | 2015-12-08 | Empire Technology Development Llc | Low light adaptive imaging device |
| KR101895415B1 (ko) | 2012-03-27 | 2018-09-06 | 삼성전자주식회사 | 아날로그-디지털 변환 회로와 이를 포함하는 적산 회로 |
| US9496425B2 (en) | 2012-04-10 | 2016-11-15 | Kla-Tencor Corporation | Back-illuminated sensor with boron layer |
| US9601299B2 (en) | 2012-08-03 | 2017-03-21 | Kla-Tencor Corporation | Photocathode including silicon substrate with boron layer |
| US9426400B2 (en) | 2012-12-10 | 2016-08-23 | Kla-Tencor Corporation | Method and apparatus for high speed acquisition of moving images using pulsed illumination |
| US9478402B2 (en) | 2013-04-01 | 2016-10-25 | Kla-Tencor Corporation | Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor |
| US9347890B2 (en) * | 2013-12-19 | 2016-05-24 | Kla-Tencor Corporation | Low-noise sensor and an inspection system using a low-noise sensor |
| US9748294B2 (en) | 2014-01-10 | 2017-08-29 | Hamamatsu Photonics K.K. | Anti-reflection layer for back-illuminated sensor |
| US9410901B2 (en) | 2014-03-17 | 2016-08-09 | Kla-Tencor Corporation | Image sensor, an inspection system and a method of inspecting an article |
| US9767986B2 (en) | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| US9860466B2 (en) | 2015-05-14 | 2018-01-02 | Kla-Tencor Corporation | Sensor with electrically controllable aperture for inspection and metrology systems |
| US10748730B2 (en) | 2015-05-21 | 2020-08-18 | Kla-Tencor Corporation | Photocathode including field emitter array on a silicon substrate with boron layer |
| US10462391B2 (en) | 2015-08-14 | 2019-10-29 | Kla-Tencor Corporation | Dark-field inspection using a low-noise sensor |
| US10778925B2 (en) | 2016-04-06 | 2020-09-15 | Kla-Tencor Corporation | Multiple column per channel CCD sensor architecture for inspection and metrology |
| US10313622B2 (en) | 2016-04-06 | 2019-06-04 | Kla-Tencor Corporation | Dual-column-parallel CCD sensor and inspection systems using a sensor |
| TWI611282B (zh) * | 2017-01-03 | 2018-01-11 | 友達光電股份有限公司 | 電源供應電路及電源供應方法 |
| US11114489B2 (en) | 2018-06-18 | 2021-09-07 | Kla-Tencor Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US10943760B2 (en) | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
| US11114491B2 (en) | 2018-12-12 | 2021-09-07 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor |
| US11848350B2 (en) | 2020-04-08 | 2023-12-19 | Kla Corporation | Back-illuminated sensor and a method of manufacturing a sensor using a silicon on insulator wafer |
| TWI840098B (zh) * | 2022-04-11 | 2024-04-21 | 義明科技股份有限公司 | 高感度的光感測器及其感測方法 |
| CN117490838B (zh) * | 2024-01-03 | 2024-03-19 | 成都善思微科技有限公司 | 一种高可靠性的平板探测器数据采集方法、系统及计算机 |
| CN120445398B (zh) * | 2025-07-02 | 2025-09-26 | 南京大学 | 基于复合介质栅双晶体管光敏探测器的感算一体方法 |
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-
2006
- 2006-09-21 EP EP06836131A patent/EP1938584A4/en not_active Ceased
- 2006-09-21 KR KR1020087009554A patent/KR100972551B1/ko not_active Expired - Fee Related
- 2006-09-21 US US11/533,859 patent/US7532145B2/en not_active Expired - Fee Related
- 2006-09-21 WO PCT/US2006/036785 patent/WO2007035858A2/en not_active Ceased
- 2006-09-21 JP JP2008532376A patent/JP4699524B2/ja not_active Expired - Fee Related
- 2006-09-21 JP JP2008532372A patent/JP5242399B2/ja active Active
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