KR100968100B1 - 고분자 화합물, 그 고분자 화합물을 함유하는 포토 레지스트 조성물, 및 레지스트 패턴 형성 방법 - Google Patents
고분자 화합물, 그 고분자 화합물을 함유하는 포토 레지스트 조성물, 및 레지스트 패턴 형성 방법 Download PDFInfo
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Abstract
[화학식 1]
(식 중, R1 은 산소, 질소, 황, 또는 할로겐 원자를 가져도 되는 탄소수 20 이하의 지방족 환식기이며, n 은 0 또는 1∼5 의 정수를 나타낸다.) 로 표시되는 산해리성 용해 억지기 (ii) 로 보호되어 있는 고분자 화합물을 사용한다.
Description
분자량 (Mw) | 분산도 (Mw/Mn) | 조성비 (x/y) | |
수지 6 | 8500 | - | - |
수지 7 | 10900 | 1.49 | 0.78/0.22 |
수지 8 | 13400 | 1.37 | 0.81/0.19 |
수지 9 | 10800 | 1.37 | 0.73/0.27 |
기판 | 유기 반사 방지막: AR-19 (시프레사 제조) |
레지스트막 두께 | 300㎚ |
노광기 | Nikon NSR-S302 (NA 0.60, 2/3 annular) |
베이크 조건 | PB:110℃ 의 90 초 |
PEB:90℃ 의 60 초 | |
현상 조건 | NMD-3 2.38% (도쿄 오카 공업사 제조) 의 30 초 |
해상력 (라인 앤드 스페이스) | 감도 (mJ/㎠) | |
수지 7 | 120nm | 15 |
수지 8 | 120nm | 15 |
수지 9 | 120nm | 14 |
기판 | 유기 반사 방지막:ARC29 (Brewer Science 사 제조) |
레지스트막 두께 | 300㎚ |
노광기 | Nikon NSR-S302 (NA 0.60, 2/3 annular) |
베이크 조건 | PB:110℃ 의 90 초 |
PEB:110℃ 의 90 초 | |
현상 조건 | NMD-3 2.38% (도쿄 오카 공업사 제조) 의 60 초 |
해상력 (라인 앤드 스페이스) | 감도 (mJ/㎠) | |
수지 2 | 120nm | 37 |
수지 3 | 120nm | 33 |
수지 4 | 120nm | 37 |
수지 5 | 120nm | 41 |
기판 | 유기 반사 방지막: AR-19 (시프레사 제조) |
막 두께 | 250㎚ |
노광기 | Nikon NSR-S302 (NA=0.60, 2/3 annular) |
베이크 조건 | PB:100℃/ 90 초 |
PEB:100℃/ 90 초 | |
현상 조건 | NMD-3 2.38% (도쿄 오카 공업사 제조) 로 23℃/ 60 초간 |
(A) 수지 | (B) 산 발생제 | (D)질소 합유 유기 화합물 | 유기 용제 | |
실시예 20 | 수지 11 (100 질량부) |
PAG1 (3 질량부) |
트리에탄올아민 (0.3 질량부) |
PGMEA (1250 질량부) |
실시예 21 | 수지 12 (100 질량부) |
PAG1 (3 질량부) |
트리에탄올아민 (0.3 질량부) |
PGMEA (1250 질량부) |
비교예 9 | 비교 수지 1 (100 질량부) |
PAG1 (3 질량부) |
트리에탄올아민 (0.3 질량부) |
PGMEA (1250 질량부) |
기판 | 8 인치 실리콘 웨이퍼 |
레지스트막 두께 | 200㎚ |
노광기 | 히타치 제작소 HL-800D (가속 전압 70kV) |
베이크 조건 | PB:120℃/ 90 초 |
PEB:120℃/ 60 초 | |
현상 조건 | NMD-3 2.38% (도쿄 오카 공업사 제조) 의 23℃/ 60 초간 |
해상력(㎚) (라인 앤드 스페이스) | 감도 (μC/㎠) | LER (nm) | |
실시예 20 | 90 | 70 | 7.2 |
실시예 21 | 90 | 59 | 8.2 |
비교예 9 | 160 | 114 | 8 |
반사 방지막 상단:재료 하단: 막 두께 |
레지스트막 두께 | 프리 베이크 (PAB) 조건 |
PEB 조건 | |
실시예 22 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 23 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 24 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 25 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 26 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 27 | ARC-2938nm | 225nm | 95℃/90 초 | 105℃/90 초 |
실시예 28 | ARC-2977nm | 250nm | 120℃/90 초 | 120℃/90 초 |
비교예 10 | ARC-2938nm | 225nm | 125℃/90 초 | 135℃/90 초 |
비교예 11 | ARC-2977nm | 250nm | 120℃/90 초 | 120℃/90 초 |
노광 여유도 (%) | |
실시예 22 | 16.0 |
실시예 23 | 15.9 |
실시예 24 | 16.8 |
실시예 25 | 13.1 |
실시예 26 | 15.5 |
실시예 27 | 13.4 |
비교예 10 | 12.7 |
LER (3σ)(nm) | |
실시예 28 | 4.8 |
비교예 11 | 9.3 |
Claims (4)
- 제 1 항에 있어서,
상기 친수성기가, 카르보닐기, 에스테르기, 알코올성 수산기, 에테르, 이미노기 및 아미노기로 이루어지는 군에서 선택되는 적어도 1 종인 고분자 화합물. - 산의 작용에 의해 알칼리 용해성이 변화하는 기재 수지 성분 (A) 과, 방사선의 조사에 의해 산을 발생시키는 산 발생제 (B) 를 함유하여 이루어지는 포토 레지스트 조성물로서,
상기 기재 수지 성분 (A) 이 제 1 항에 기재된 고분자 화합물인 포토 레지스트 조성물. - 제 3 항에 기재된 포토 레지스트 조성물을 사용하여 기판 상에 포토 레지스트막을 형성하는 공정과,
상기 포토 레지스트막을 노광하는 공정과,
노광된 상기 포토 레지스트막을 현상하여 레지스트 패턴을 형성하는 공정을 포함하는 레지스트 패턴 형성 방법.
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JPJP-P-2004-045522 | 2004-02-20 | ||
JP2004045522 | 2004-02-20 | ||
JPJP-P-2004-134585 | 2004-04-28 | ||
JP2004134585 | 2004-04-28 | ||
JP2004179475 | 2004-06-17 | ||
JPJP-P-2004-179475 | 2004-06-17 | ||
JP2004252474 | 2004-08-31 | ||
JPJP-P-2004-252474 | 2004-08-31 | ||
JP2004316960A JP2006096965A (ja) | 2004-02-20 | 2004-10-29 | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
JPJP-P-2004-316960 | 2004-10-29 |
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EP2433972A1 (en) | 2012-03-28 |
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US20080166655A1 (en) | 2008-07-10 |
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US7723007B2 (en) | 2010-05-25 |
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