KR100966391B1 - 에칭 깊이 검출 방법 - Google Patents

에칭 깊이 검출 방법 Download PDF

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Publication number
KR100966391B1
KR100966391B1 KR1020010003816A KR20010003816A KR100966391B1 KR 100966391 B1 KR100966391 B1 KR 100966391B1 KR 1020010003816 A KR1020010003816 A KR 1020010003816A KR 20010003816 A KR20010003816 A KR 20010003816A KR 100966391 B1 KR100966391 B1 KR 100966391B1
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South Korea
Prior art keywords
etching
interference
depth
interference waveform
etch
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Expired - Lifetime
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KR1020010003816A
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English (en)
Korean (ko)
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KR20010078097A (ko
Inventor
야마자와요헤이
오오카와요시히토
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도쿄엘렉트론가부시키가이샤
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Publication of KR20010078097A publication Critical patent/KR20010078097A/ko
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020010003816A 2000-01-28 2001-01-26 에칭 깊이 검출 방법 Expired - Lifetime KR100966391B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000019524A JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP2000-019524 2000-01-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090065271A Division KR100966390B1 (ko) 2000-01-28 2009-07-17 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법

Publications (2)

Publication Number Publication Date
KR20010078097A KR20010078097A (ko) 2001-08-20
KR100966391B1 true KR100966391B1 (ko) 2010-06-28

Family

ID=18546207

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020010003816A Expired - Lifetime KR100966391B1 (ko) 2000-01-28 2001-01-26 에칭 깊이 검출 방법
KR1020090065271A Expired - Lifetime KR100966390B1 (ko) 2000-01-28 2009-07-17 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020090065271A Expired - Lifetime KR100966390B1 (ko) 2000-01-28 2009-07-17 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법

Country Status (4)

Country Link
US (1) US6448094B2 (https=)
JP (1) JP4444428B2 (https=)
KR (2) KR100966391B1 (https=)
TW (1) TW483066B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0106686D0 (en) * 2001-03-19 2001-05-09 Keating Michael Method and system for determining engraved area volume
US7133137B2 (en) 2002-06-27 2006-11-07 Visx, Incorporated Integrated scanning and ocular tomography system and method
US6686270B1 (en) * 2002-08-05 2004-02-03 Advanced Micro Devices, Inc. Dual damascene trench depth monitoring
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
JP2007027478A (ja) * 2005-07-19 2007-02-01 Sharp Corp エッチング方法およびエッチング装置
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP3938928B1 (ja) 2006-06-22 2007-06-27 株式会社コナミデジタルエンタテインメント 線形状処理装置、線形状処理方法、ならびに、プログラム
US20080078948A1 (en) * 2006-10-03 2008-04-03 Tokyo Electron Limited Processing termination detection method and apparatus
KR101073229B1 (ko) 2008-01-17 2011-10-12 도쿄엘렉트론가부시키가이샤 에칭량 산출 방법, 기억 매체 및 에칭량 산출 장치
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101493048B1 (ko) * 2009-02-27 2015-02-13 삼성전자주식회사 반도체 소자 측정 장치 및 이를 사용한 반도체 소자 측정 방법
US8778204B2 (en) * 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US20130273237A1 (en) * 2012-04-12 2013-10-17 David Johnson Method to Determine the Thickness of a Thin Film During Plasma Deposition
GB201916079D0 (en) 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN112291944B (zh) * 2020-10-27 2022-02-18 惠州市特创电子科技股份有限公司 线路板及其激光开窗方法
CN112490123B (zh) * 2020-11-20 2024-05-17 北京北方华创微电子装备有限公司 补充刻蚀方法、半导体刻蚀设备
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
CN118782490B (zh) * 2024-09-12 2025-01-03 上海邦芯半导体科技有限公司 刻蚀深度检测装置、方法及反应处理设备
CN118859647B (zh) * 2024-09-13 2025-02-14 天津华慧芯科技集团有限公司 一种纳米压印母版的高精度测量方法
CN120491369B (zh) * 2025-07-16 2025-10-03 长春市华信科瑞光电技术有限公司 片上全光开关及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152017A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd エツチングモニタ装置
FR2616269B1 (fr) * 1987-06-04 1990-11-09 Labo Electronique Physique Dispositif de test pour la mise en oeuvre d'un procede de realisation de dispositifs semiconducteurs
JPH0223617A (ja) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp 半導体基板ウェハの溝形成方法
JP2545948B2 (ja) * 1988-09-06 1996-10-23 富士通株式会社 エッチング装置
JP2742446B2 (ja) * 1989-05-23 1998-04-22 富士通株式会社 エッチングの方法および装置
US5395769A (en) * 1992-06-26 1995-03-07 International Business Machines Corporation Method for controlling silicon etch depth
JPH09129619A (ja) * 1995-08-31 1997-05-16 Toshiba Corp エッチング深さ測定装置
JPH1064884A (ja) 1996-08-13 1998-03-06 Fujitsu Ltd エッチング装置及びエッチング方法
JPH11261105A (ja) 1998-03-11 1999-09-24 Toshiba Corp 半導体発光素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置

Also Published As

Publication number Publication date
KR20090084801A (ko) 2009-08-05
US6448094B2 (en) 2002-09-10
JP4444428B2 (ja) 2010-03-31
JP2001210625A (ja) 2001-08-03
TW483066B (en) 2002-04-11
KR100966390B1 (ko) 2010-06-28
US20010010939A1 (en) 2001-08-02
KR20010078097A (ko) 2001-08-20

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