JP4444428B2 - エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 - Google Patents

エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 Download PDF

Info

Publication number
JP4444428B2
JP4444428B2 JP2000019524A JP2000019524A JP4444428B2 JP 4444428 B2 JP4444428 B2 JP 4444428B2 JP 2000019524 A JP2000019524 A JP 2000019524A JP 2000019524 A JP2000019524 A JP 2000019524A JP 4444428 B2 JP4444428 B2 JP 4444428B2
Authority
JP
Japan
Prior art keywords
etching
interference
etching rate
calculated
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000019524A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001210625A (ja
JP2001210625A5 (https=
Inventor
陽平 山澤
義仁 大川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2000019524A priority Critical patent/JP4444428B2/ja
Priority to KR1020010003816A priority patent/KR100966391B1/ko
Priority to US09/769,307 priority patent/US6448094B2/en
Priority to TW090101667A priority patent/TW483066B/zh
Publication of JP2001210625A publication Critical patent/JP2001210625A/ja
Publication of JP2001210625A5 publication Critical patent/JP2001210625A5/ja
Priority to KR1020090065271A priority patent/KR100966390B1/ko
Application granted granted Critical
Publication of JP4444428B2 publication Critical patent/JP4444428B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2000019524A 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置 Expired - Fee Related JP4444428B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000019524A JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
KR1020010003816A KR100966391B1 (ko) 2000-01-28 2001-01-26 에칭 깊이 검출 방법
US09/769,307 US6448094B2 (en) 2000-01-28 2001-01-26 Method of detecting etching depth
TW090101667A TW483066B (en) 2000-01-28 2001-01-29 Method of detecting etching depth
KR1020090065271A KR100966390B1 (ko) 2000-01-28 2009-07-17 에칭 모니터 장치, 에칭 장치 및 에칭 깊이 검출 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000019524A JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009092532A Division JP4909372B2 (ja) 2009-04-06 2009-04-06 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP2009253423A Division JP5199981B2 (ja) 2009-11-04 2009-11-04 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Publications (3)

Publication Number Publication Date
JP2001210625A JP2001210625A (ja) 2001-08-03
JP2001210625A5 JP2001210625A5 (https=) 2007-03-22
JP4444428B2 true JP4444428B2 (ja) 2010-03-31

Family

ID=18546207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000019524A Expired - Fee Related JP4444428B2 (ja) 2000-01-28 2000-01-28 エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置

Country Status (4)

Country Link
US (1) US6448094B2 (https=)
JP (1) JP4444428B2 (https=)
KR (2) KR100966391B1 (https=)
TW (1) TW483066B (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0106686D0 (en) * 2001-03-19 2001-05-09 Keating Michael Method and system for determining engraved area volume
US7133137B2 (en) 2002-06-27 2006-11-07 Visx, Incorporated Integrated scanning and ocular tomography system and method
US6686270B1 (en) * 2002-08-05 2004-02-03 Advanced Micro Devices, Inc. Dual damascene trench depth monitoring
JP4500510B2 (ja) * 2003-06-05 2010-07-14 東京エレクトロン株式会社 エッチング量検出方法，エッチング方法，およびエッチング装置
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
JP2007027478A (ja) * 2005-07-19 2007-02-01 Sharp Corp エッチング方法およびエッチング装置
US7833381B2 (en) * 2005-08-18 2010-11-16 David Johnson Optical emission interferometry for PECVD using a gas injection hole
JP3938928B1 (ja) 2006-06-22 2007-06-27 株式会社コナミデジタルエンタテインメント 線形状処理装置、線形状処理方法、ならびに、プログラム
US20080078948A1 (en) * 2006-10-03 2008-04-03 Tokyo Electron Limited Processing termination detection method and apparatus
KR101073229B1 (ko) 2008-01-17 2011-10-12 도쿄엘렉트론가부시키가이샤 에칭량 산출 방법, 기억 매체 및 에칭량 산출 장치
JP5192850B2 (ja) * 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法
KR101493048B1 (ko) * 2009-02-27 2015-02-13 삼성전자주식회사 반도체 소자 측정 장치 및 이를 사용한 반도체 소자 측정 방법
US8778204B2 (en) * 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US20130273237A1 (en) * 2012-04-12 2013-10-17 David Johnson Method to Determine the Thickness of a Thin Film During Plasma Deposition
GB201916079D0 (en) 2019-11-05 2019-12-18 Spts Technologies Ltd Apparatus and method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
CN112291944B (zh) * 2020-10-27 2022-02-18 惠州市特创电子科技股份有限公司 线路板及其激光开窗方法
CN112490123B (zh) * 2020-11-20 2024-05-17 北京北方华创微电子装备有限公司 补充刻蚀方法、半导体刻蚀设备
GB202109722D0 (en) * 2021-07-06 2021-08-18 Oxford Instruments Nanotechnology Tools Ltd Method of etching or depositing a thin film
CN118782490B (zh) * 2024-09-12 2025-01-03 上海邦芯半导体科技有限公司 刻蚀深度检测装置、方法及反应处理设备
CN118859647B (zh) * 2024-09-13 2025-02-14 天津华慧芯科技集团有限公司 一种纳米压印母版的高精度测量方法
CN120491369B (zh) * 2025-07-16 2025-10-03 长春市华信科瑞光电技术有限公司 片上全光开关及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61152017A (ja) * 1984-12-26 1986-07-10 Hitachi Ltd エツチングモニタ装置
FR2616269B1 (fr) * 1987-06-04 1990-11-09 Labo Electronique Physique Dispositif de test pour la mise en oeuvre d'un procede de realisation de dispositifs semiconducteurs
JPH0223617A (ja) * 1988-07-13 1990-01-25 Mitsubishi Electric Corp 半導体基板ウェハの溝形成方法
JP2545948B2 (ja) * 1988-09-06 1996-10-23 富士通株式会社 エッチング装置
JP2742446B2 (ja) * 1989-05-23 1998-04-22 富士通株式会社 エッチングの方法および装置
US5395769A (en) * 1992-06-26 1995-03-07 International Business Machines Corporation Method for controlling silicon etch depth
JPH09129619A (ja) * 1995-08-31 1997-05-16 Toshiba Corp エッチング深さ測定装置
JPH1064884A (ja) 1996-08-13 1998-03-06 Fujitsu Ltd エッチング装置及びエッチング方法
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
JPH11261105A (ja) 1998-03-11 1999-09-24 Toshiba Corp 半導体発光素子

Also Published As

Publication number Publication date
KR20090084801A (ko) 2009-08-05
US6448094B2 (en) 2002-09-10
JP2001210625A (ja) 2001-08-03
TW483066B (en) 2002-04-11
KR100966391B1 (ko) 2010-06-28
KR100966390B1 (ko) 2010-06-28
US20010010939A1 (en) 2001-08-02
KR20010078097A (ko) 2001-08-20

Similar Documents

Publication Publication Date Title
JP4444428B2 (ja) エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP5199981B2 (ja) エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP6231370B2 (ja) 消耗量測定装置、温度測定装置、消耗量測定方法、温度測定方法及び基板処理システム
JP5891006B2 (ja) 光干渉システム、基板処理装置及び計測方法
JP2001210625A5 (https=)
KR102330413B1 (ko) 온도 측정 방법, 기판 처리 시스템 및 기판 처리 장치에 배치되는 부재
EP0841682A2 (en) Method of detecting end point of plasma processing and apparatus for the same
CN101313308A (zh) 用于监测基板处理的神经网络方法和设备
JP2001085388A (ja) 終点検出方法
JP4909372B2 (ja) エッチング深さの検出方法並びにエッチングモニター装置及びエッチング装置
JP4224028B2 (ja) 改善された高速フ−リエ変換を利用した膜厚の測定装置及び方法
JPH11354509A (ja) プラズマエッチングの終点検出方法及びプラズマエッチング装置
JP2003173896A (ja) 異常放電検出装置、異常放電検出方法、及び、プラズマ処理装置
JP2001093885A (ja) エッチング監視装置
JP7755553B2 (ja) 分析装置、分析方法及び分析用プログラム
TW202201465A (zh) 電漿處理裝置及電漿處理方法
JPH0494533A (ja) 被エッチング膜の膜厚検出方法、膜厚検出装置及びエッチング装置
JP2002520836A (ja) 改良されたプロセスモニタ方法
JPH10325708A (ja) エッチング深さ測定方法及びその装置
KR20020077753A (ko) 박막 두께 변화율 산출 및 공정조건 모니터링 장치
KR100812744B1 (ko) 플라즈마처리장치 및 플라즈마처리방법
JP2000002660A (ja) 高周波グロー放電発光分光分析における膜厚計算方法
JPH0521395A (ja) エツチング終点の検出方法
JP2002365318A (ja) 波形解析装置およびこれを用いたプラズマ処理装置
JP2012156456A (ja) 基板処理装置および基板処理の終了時点を検出する方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090123

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090203

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090406

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091104

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20091124

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100112

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100114

R150 Certificate of patent or registration of utility model

Ref document number: 4444428

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees