KR100956467B1 - 플라즈마 처리 방법 - Google Patents

플라즈마 처리 방법 Download PDF

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KR100956467B1
KR100956467B1 KR1020087019543A KR20087019543A KR100956467B1 KR 100956467 B1 KR100956467 B1 KR 100956467B1 KR 1020087019543 A KR1020087019543 A KR 1020087019543A KR 20087019543 A KR20087019543 A KR 20087019543A KR 100956467 B1 KR100956467 B1 KR 100956467B1
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South Korea
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plasma
delete delete
treatment
supply
oxynitride film
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KR20080079339A (ko
Inventor
세이지 마츠야마
도시오 나카니시
시게노리 오자키
히카루 아다치
고이치 다카츠키
요시히로 사토
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도쿄엘렉트론가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020087019543A 2004-03-03 2005-03-02 플라즈마 처리 방법 Expired - Fee Related KR100956467B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00058945 2004-03-03
JP2004058945 2004-03-03
JP2004268236 2004-09-15
JPJP-P-2004-00268236 2004-09-15

Related Parent Applications (1)

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KR1020067017788A Division KR100956466B1 (ko) 2004-03-03 2005-03-02 플라즈마 처리 방법 및 컴퓨터 기억 매체

Publications (2)

Publication Number Publication Date
KR20080079339A KR20080079339A (ko) 2008-08-29
KR100956467B1 true KR100956467B1 (ko) 2010-05-07

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KR1020087019543A Expired - Fee Related KR100956467B1 (ko) 2004-03-03 2005-03-02 플라즈마 처리 방법
KR1020067017788A Expired - Fee Related KR100956466B1 (ko) 2004-03-03 2005-03-02 플라즈마 처리 방법 및 컴퓨터 기억 매체

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Country Status (7)

Country Link
US (3) US7723241B2 (cg-RX-API-DMAC7.html)
EP (1) EP1722406A1 (cg-RX-API-DMAC7.html)
JP (1) JP5101103B2 (cg-RX-API-DMAC7.html)
KR (2) KR100956467B1 (cg-RX-API-DMAC7.html)
CN (2) CN1926670B (cg-RX-API-DMAC7.html)
TW (1) TW200540992A (cg-RX-API-DMAC7.html)
WO (1) WO2005086215A1 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

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TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
EP1722406A1 (en) 2004-03-03 2006-11-15 Tokyo Electron Limited Plasma processing method and computer storing medium
US8247331B2 (en) * 2006-12-28 2012-08-21 Tokyo Electron Limited Method for forming insulating film and method for manufacturing semiconductor device
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
JP5390379B2 (ja) * 2007-05-29 2014-01-15 東京エレクトロン株式会社 プラズマ窒化処理におけるチャンバ内の前処理方法、プラズマ処理方法、および記憶媒体
JP5520455B2 (ja) * 2008-06-11 2014-06-11 東京エレクトロン株式会社 プラズマ処理装置
JP5357486B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
KR101851199B1 (ko) 2011-12-28 2018-04-25 삼성전자주식회사 질화된 게이트 절연층을 포함하는 반도체 소자 및 그 제조 방법
JP5490087B2 (ja) * 2011-12-28 2014-05-14 東京エレクトロン株式会社 マイクロ波加熱処理装置および処理方法
CN106159036A (zh) * 2015-04-13 2016-11-23 中兴通讯股份有限公司 一种硅基光电子系统的制备方法
JP2019009305A (ja) * 2017-06-26 2019-01-17 東京エレクトロン株式会社 プラズマ処理装置
CN112864007B (zh) * 2019-11-28 2022-04-12 长鑫存储技术有限公司 半导体结构的形成方法
TWI793744B (zh) * 2020-09-09 2023-02-21 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及程式

Citations (2)

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JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法

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JPH0627345B2 (ja) * 1988-11-18 1994-04-13 住友金属工業株式会社 プラズマプロセス装置
JPH08288271A (ja) * 1995-04-18 1996-11-01 Sony Corp 成膜方法およびこれに用いる成膜装置
US6143081A (en) 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
KR100537679B1 (ko) * 1996-07-12 2006-04-06 동경 엘렉트론 주식회사 성막장치 및 성막방법
KR200156080Y1 (ko) 1996-08-22 1999-09-01 유창근 의자용 유압실린더의 제어밸브몸통
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
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JP2002222941A (ja) * 2001-01-24 2002-08-09 Sony Corp Ｍｉｓ型半導体装置及びその製造方法
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JP2003077915A (ja) * 2001-09-04 2003-03-14 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法及びその形成装置
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP5101103B2 (ja) 2012-12-19
KR100956466B1 (ko) 2010-05-07
CN1926670A (zh) 2007-03-07
EP1722406A1 (en) 2006-11-15
US7897518B2 (en) 2011-03-01
JPWO2005086215A1 (ja) 2008-01-24
KR20080079339A (ko) 2008-08-29
CN102181819A (zh) 2011-09-14
US7723241B2 (en) 2010-05-25
TWI368945B (cg-RX-API-DMAC7.html) 2012-07-21
US20110124202A1 (en) 2011-05-26
WO2005086215A1 (ja) 2005-09-15
KR20060116030A (ko) 2006-11-13
TW200540992A (en) 2005-12-16
CN1926670B (zh) 2011-05-18
US20070059944A1 (en) 2007-03-15
US20100196627A1 (en) 2010-08-05
US8183165B2 (en) 2012-05-22

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Not in force date: 20140429

St.27 status event code: N-4-6-H10-H13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000