KR100949561B1 - 연마 패드 - Google Patents
연마 패드 Download PDFInfo
- Publication number
- KR100949561B1 KR100949561B1 KR1020087004863A KR20087004863A KR100949561B1 KR 100949561 B1 KR100949561 B1 KR 100949561B1 KR 1020087004863 A KR1020087004863 A KR 1020087004863A KR 20087004863 A KR20087004863 A KR 20087004863A KR 100949561 B1 KR100949561 B1 KR 100949561B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- molecular weight
- polishing pad
- polyurethane resin
- resin foam
- Prior art date
Links
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/36—Hydroxylated esters of higher fatty acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2101/00—Manufacture of cellular products
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polyurethanes Or Polyureas (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
Description
Claims (14)
- 미세 기포를 가지는 폴리우레탄 수지 발포체로 형성되는 연마층을 가지는 연마 패드에 있어서, 상기 폴리우레탄 수지 발포체의 원료 성분인 고분자량 폴리올 성분은 수평균 분자량 550∼800의 소수성 고분자량 폴리올 A 및 수평균 분자량 950∼1300의 소수성 고분자량 폴리올 B를 A/B=10/90∼50/50의 중량비로 함유하는 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 고분자량 폴리올 성분과 이소시아네이트 성분을 함유하여 형성되는 이소시아네이트 말단 프리폴리머와 쇄연장제의 반응 경화체인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 소수성 고분자량 폴리올 A와 이소시아네이트 성분을 함유하여 이루어지는 이소시아네이트 말단 프리폴리머 A와 소수성 고분자량 폴리올 B와 이소시아네이트 성분을 함유하여 이루어지는 이소시아네이트 말단 프리폴리머 B와 쇄연장제의 반응 경화체인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 소수성 고분자량 폴리올 A 및 B가 폴리테트라메틸렌글리콜인 것을 특징으로 하는 연마 패드.
- 제2항에 있어서,상기 쇄연장제가 방향족 디아민인 것을 특징으로 하는 연마 패드.
- 제5항에 있어서,상기 방향족 디아민이 비할로겐계 방향족 디아민인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 수산기를 가지지 않은 실리콘계 비이온 계면활성제를 0.05중량% 이상 5중량% 미만 함유하는 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 비중이 0.7∼0.88인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 아스카 D 경도가 45∼60도인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 인장 강도가 15∼25MPa인 것을 특징으로 하는 연마 패드.
- 제1항에 있어서,상기 폴리우레탄 수지 발포체는 인장 파단 신도가 50∼150%인 것을 특징으로 하는 연마 패드.
- 삭제
- 제1항 내지 제11항 중 어느 한 항에 기재된 연마 패드를 사용하여 반도체 웨이퍼의 표면을 연마하는 반도체 웨이퍼의 연마 방법.
- 제13항에 있어서, 연마 패드 표면을 드레싱 속도 6∼17㎛/min의 조건으로 드레싱 하면서 반도체 웨이퍼의 표면을 연마하는 반도체 웨이퍼의 연마 방법.
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JP2005249046A JP4884725B2 (ja) | 2005-08-30 | 2005-08-30 | 研磨パッド |
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JP (1) | JP4884725B2 (ko) |
KR (1) | KR100949561B1 (ko) |
CN (1) | CN101253022B (ko) |
TW (1) | TW200709896A (ko) |
WO (1) | WO2007026569A1 (ko) |
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WO2006095591A1 (ja) * | 2005-03-08 | 2006-09-14 | Toyo Tire & Rubber Co., Ltd. | 研磨パッド及びその製造方法 |
KR100949560B1 (ko) | 2005-05-17 | 2010-03-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
JP5031236B2 (ja) * | 2006-01-10 | 2012-09-19 | 東洋ゴム工業株式会社 | 研磨パッド |
CN101489721B (zh) * | 2006-08-28 | 2014-06-18 | 东洋橡胶工业株式会社 | 抛光垫 |
JP5008927B2 (ja) | 2006-08-31 | 2012-08-22 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5078000B2 (ja) | 2007-03-28 | 2012-11-21 | 東洋ゴム工業株式会社 | 研磨パッド |
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US20130017762A1 (en) * | 2011-07-15 | 2013-01-17 | Infineon Technologies Ag | Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine |
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CN101253022B (zh) | 2010-05-26 |
US8309466B2 (en) | 2012-11-13 |
CN101253022A (zh) | 2008-08-27 |
JP2007061928A (ja) | 2007-03-15 |
JP4884725B2 (ja) | 2012-02-29 |
KR20080031486A (ko) | 2008-04-08 |
US20090104850A1 (en) | 2009-04-23 |
WO2007026569A1 (ja) | 2007-03-08 |
TWI295609B (ko) | 2008-04-11 |
TW200709896A (en) | 2007-03-16 |
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