KR100948286B1 - 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 - Google Patents

매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 Download PDF

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Publication number
KR100948286B1
KR100948286B1 KR1020070007123A KR20070007123A KR100948286B1 KR 100948286 B1 KR100948286 B1 KR 100948286B1 KR 1020070007123 A KR1020070007123 A KR 1020070007123A KR 20070007123 A KR20070007123 A KR 20070007123A KR 100948286 B1 KR100948286 B1 KR 100948286B1
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South Korea
Prior art keywords
wafer
etching
supply
etchant
supply nozzles
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Korean (ko)
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KR20070078981A (ko
Inventor
사카에 코야타
토모히로 하시이
카츠히코 무라야마
카즈시게 타카이시
타케오 카토
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가부시키가이샤 섬코
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020070007123A 2006-01-31 2007-01-23 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법 Expired - Fee Related KR100948286B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00021899 2006-01-31
JP2006021899A JP4835175B2 (ja) 2006-01-31 2006-01-31 ウェーハの枚葉式エッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090002214A Division KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Publications (2)

Publication Number Publication Date
KR20070078981A KR20070078981A (ko) 2007-08-03
KR100948286B1 true KR100948286B1 (ko) 2010-03-17

Family

ID=38321003

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070007123A Expired - Fee Related KR100948286B1 (ko) 2006-01-31 2007-01-23 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법
KR1020090002214A Withdrawn KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020090002214A Withdrawn KR20090012364A (ko) 2006-01-31 2009-01-12 매엽식 웨이퍼 식각 장치 및 매엽식 웨이퍼 식각 방법

Country Status (3)

Country Link
US (1) US7906438B2 (enExample)
JP (1) JP4835175B2 (enExample)
KR (2) KR100948286B1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
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JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP2010003847A (ja) * 2008-06-19 2010-01-07 Sumco Corp 半導体ウェーハの製造方法
JP5026356B2 (ja) * 2008-06-26 2012-09-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP2010177541A (ja) * 2009-01-30 2010-08-12 Pre-Tech At:Kk Ｓｉウェーハの加工ダメージ除去方法
JP5389473B2 (ja) * 2009-03-03 2014-01-15 株式会社ディスコ スピンナ洗浄装置
KR101044009B1 (ko) * 2009-07-17 2011-06-24 세메스 주식회사 기판 표면을 선택적으로 에칭하기 위한 기판 처리 장치
JP5490659B2 (ja) * 2009-12-09 2014-05-14 東京エレクトロン株式会社 基板処理装置、基板処理方法及びこの基板処理方法を実行させるためのプログラムを記録した記録媒体
JP2012004294A (ja) * 2010-06-16 2012-01-05 Shibaura Mechatronics Corp 基板処理装置および基板処理方法
JP5807949B2 (ja) 2010-11-12 2015-11-10 国立大学法人東北大学 超高速ウェットエッチング装置
KR101308352B1 (ko) 2011-12-16 2013-09-17 주식회사 엘지실트론 매엽식 웨이퍼 에칭장치
US9079210B2 (en) * 2013-07-22 2015-07-14 Infineon Technologies Ag Methods for etching a workpiece, an apparatus configured to etch a workpiece, and a non-transitory computer readable medium
JP6311236B2 (ja) * 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
US9653338B2 (en) * 2013-12-23 2017-05-16 Kla-Tencor Corporation System and method for non-contact wafer chucking
JP6485904B2 (ja) * 2015-03-03 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US10403517B2 (en) 2015-02-18 2019-09-03 SCREEN Holdings Co., Ltd. Substrate processing apparatus
US10332761B2 (en) 2015-02-18 2019-06-25 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6504540B2 (ja) * 2015-02-25 2019-04-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6509583B2 (ja) * 2015-02-25 2019-05-08 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102356217B1 (ko) * 2015-05-14 2022-01-27 에이씨엠 리서치 (상하이) 인코포레이티드 기판 베벨 및 이면 보호를 위한 장치
JP2018147908A (ja) * 2015-07-27 2018-09-20 東京エレクトロン株式会社 基板処理方法および基板処理装置
TWI629720B (zh) * 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
US10269758B2 (en) * 2015-12-24 2019-04-23 Intel Corporation Systems and processes for measuring thickness values of semiconductor substrates
JP6845696B2 (ja) * 2016-02-25 2021-03-24 芝浦メカトロニクス株式会社 基板処理装置、基板処理方法及び基板の製造方法
WO2017192994A1 (en) * 2016-05-06 2017-11-09 Applied Materials, Inc. Wafer profiling for etching system
DE102017212887A1 (de) 2017-07-26 2019-01-31 Gebr. Schmid Gmbh Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung
KR101985756B1 (ko) * 2017-08-09 2019-06-04 세메스 주식회사 기판 처리 장치 및 방법
JP2020123676A (ja) * 2019-01-30 2020-08-13 信越半導体株式会社 エッチング方法
KR102826393B1 (ko) * 2024-07-31 2025-06-27 에프엔에스테크 주식회사 미세회로 패턴 형성용 에칭 장치

Citations (4)

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JPH10163161A (ja) 1996-11-27 1998-06-19 Toshiba Corp スピン処理装置
KR20030081607A (ko) * 2002-04-12 2003-10-22 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP2004140196A (ja) 2002-10-17 2004-05-13 Nec Electronics Corp 半導体装置の製造方法および基板洗浄装置
KR20050116303A (ko) * 2004-06-07 2005-12-12 동부아남반도체 주식회사 현상액 분사 장치

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JPH0322428A (ja) * 1989-06-19 1991-01-30 Nec Kyushu Ltd 半導体装置の製造装置
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
DE59406900D1 (de) * 1993-02-08 1998-10-22 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige Gegenstände
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TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JPH1145872A (ja) * 1997-07-25 1999-02-16 Shin Etsu Handotai Co Ltd 半導体基板の平坦化方法および平坦化装置
JPH11135464A (ja) 1997-10-30 1999-05-21 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
MY120464A (en) * 1997-12-09 2005-10-31 Shinetsu Handotai Kk Semiconductor wafer processing method and semiconductor wafers produced by the same
JPH11354489A (ja) * 1998-06-05 1999-12-24 Toshiba Corp 半導体製造装置及び半導体装置のエッチング方法
JP5134774B2 (ja) * 2006-01-16 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JPH10163161A (ja) 1996-11-27 1998-06-19 Toshiba Corp スピン処理装置
KR20030081607A (ko) * 2002-04-12 2003-10-22 한국디엔에스 주식회사 두께측정시스템이 구비된 회전식각장치
JP2004140196A (ja) 2002-10-17 2004-05-13 Nec Electronics Corp 半導体装置の製造方法および基板洗浄装置
KR20050116303A (ko) * 2004-06-07 2005-12-12 동부아남반도체 주식회사 현상액 분사 장치

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Publication number Publication date
US20070175863A1 (en) 2007-08-02
KR20070078981A (ko) 2007-08-03
JP4835175B2 (ja) 2011-12-14
JP2007207810A (ja) 2007-08-16
US7906438B2 (en) 2011-03-15
KR20090012364A (ko) 2009-02-03

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