KR100948205B1 - 스퍼터링 장치 - Google Patents
스퍼터링 장치 Download PDFInfo
- Publication number
- KR100948205B1 KR100948205B1 KR1020020066246A KR20020066246A KR100948205B1 KR 100948205 B1 KR100948205 B1 KR 100948205B1 KR 1020020066246 A KR1020020066246 A KR 1020020066246A KR 20020066246 A KR20020066246 A KR 20020066246A KR 100948205 B1 KR100948205 B1 KR 100948205B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- target
- support
- film
- film formation
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (22)
- 복수개의 음극을 구비하고, 기판의 피성막면과 대향하는 위치에 중심축을 중심으로 회전할 수 있도록 설치되어 있고, 상기 중심축을 중심으로 회전함으로써 상기 복수개의 음극에 각각 설치된 타겟으로부터 상기 기판의 피성막면에 대향하는 타겟을 선택할수 있는 지지체와,상기 지지체의 주위를 둘러싸면서, 상기 기판의 피성막면과 대향하는 방향으로 개구부가 설치되어, 상기 지지체의 회전과 연동하여 회전할 수 있고 지지체와의 연동을 해제할 수 있는 쉴드를 구비하는 것을 특징으로 하는 스퍼터링 장치.
- 제1항에 있어서,상기 지지체 및 쉴드는 복수의 조로 편성되어 있는 것을 특징으로 하는 스퍼터링 장치.
- 제2항에 있어서,상기 지지체의 상호간의 거리를 조정하는 거리조정기구를 구비하는 것을 특징으로 하는 스퍼터링 장치.
- 제2항에 있어서,상기 지지체는, 상기 기판의 피성막면의 중심에 대향하는 위치와, 상기 기판의 피성막면의 주변에 대향하는 위치에 각각 설치되는 것을 특징으로 하는 스퍼터링 장치.
- 제2항 내지 제4항 중 어느 한 항에 있어서,상기 지지체와 쉴드는, 양측에 기판이 탑재된 트레이를 사이에 두고 대칭적으로 설치되는 것을 특징으로 하는 스퍼터링 장치.
- 제1항에 있어서,상기 지지체의 중심축이 상기 기판의 피성막면에 평행하는 것을 특징으로 하는 스퍼터링 장치.
- 제1항에 있어서,상기 기판의 피성막면에 대향하는 타겟의 피스퍼터링면과 상기 기판의 피성막면과의 사이의 대향 거리를 조정하는 거리 조정기구를 구비하고 있는 것을 특징으로 하는 스퍼터링 장치.
- 제1항에 있어서,상기 기판의 피성막면에 대향하고 있지 않은 쪽의 타겟을 클리닝 하는 클리닝 장치를 구비하고 있는 것을 특징으로 하는 스퍼터링 장치.
- 제1항에 있어서,상기 지지체의 단면 형상은, 삼각형, 사각형 및 오각형 이상의 다각형의 형상들로부터 선택된 1개의 형상으로 하는 것을 특징으로 하는 스퍼터링 장치.
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00339827 | 2001-11-05 | ||
JP2001339827A JP2003147519A (ja) | 2001-11-05 | 2001-11-05 | スパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030038384A KR20030038384A (ko) | 2003-05-16 |
KR100948205B1 true KR100948205B1 (ko) | 2010-03-16 |
Family
ID=19154119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020066246A KR100948205B1 (ko) | 2001-11-05 | 2002-10-29 | 스퍼터링 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6800183B2 (ko) |
JP (1) | JP2003147519A (ko) |
KR (1) | KR100948205B1 (ko) |
CN (1) | CN1285755C (ko) |
TW (1) | TW573037B (ko) |
Families Citing this family (51)
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JP3965479B2 (ja) * | 2003-07-28 | 2007-08-29 | 株式会社エフ・ティ・エスコーポレーション | 箱型対向ターゲット式スパッタ装置及び化合物薄膜の製造方法 |
JP2008505842A (ja) | 2004-07-12 | 2008-02-28 | 日本板硝子株式会社 | 低保守コーティング |
EP1626432A1 (de) * | 2004-08-10 | 2006-02-15 | Applied Films GmbH & Co. KG | Magnetronsputtereinrichtung, Zylinderkathode und Verfahren zur Aufbringung von dünnen Schichten aus unterschiedlichen Materialien auf einem Substrat |
JP2006134603A (ja) * | 2004-11-02 | 2006-05-25 | Bridgestone Corp | 触媒構造体及びそれを用いた固体高分子型燃料電池用膜電極接合体 |
US7923114B2 (en) | 2004-12-03 | 2011-04-12 | Cardinal Cg Company | Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films |
US8092660B2 (en) | 2004-12-03 | 2012-01-10 | Cardinal Cg Company | Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films |
JP5265926B2 (ja) * | 2005-02-16 | 2013-08-14 | スリーエム イノベイティブ プロパティズ カンパニー | 燃料電池触媒 |
EP1905865B1 (en) * | 2005-07-19 | 2014-04-09 | Ulvac, Inc. | Sputtering apparatus and method for manufacturing transparent conducting film |
WO2007124291A2 (en) | 2006-04-19 | 2007-11-01 | Cardinal Cg Company | Opposed functional coatings having comparable single surface reflectances |
KR101213888B1 (ko) * | 2006-05-08 | 2012-12-18 | 엘지디스플레이 주식회사 | 스퍼터링 장치, 그 구동 방법 및 이를 이용한 패널 제조방법 |
KR101275924B1 (ko) * | 2006-05-22 | 2013-06-14 | 엘지디스플레이 주식회사 | 스퍼터링 장치, 그 구동 방법 및 이를 이용한 패널 제조방법 |
US20080011599A1 (en) | 2006-07-12 | 2008-01-17 | Brabender Dennis M | Sputtering apparatus including novel target mounting and/or control |
US8425741B2 (en) * | 2006-07-20 | 2013-04-23 | Aviza Technology Limited | Ion deposition apparatus having rotatable carousel for supporting a plurality of targets |
KR101147484B1 (ko) * | 2007-01-26 | 2012-05-22 | 가부시끼가이샤 오오사까 신꾸우기끼 세이사꾸쇼 | 스퍼터링 방법 및 스퍼터링 장치 |
TWI383059B (zh) * | 2007-02-12 | 2013-01-21 | Hon Hai Prec Ind Co Ltd | 濺鍍式鍍膜裝置及方法 |
US8864958B2 (en) * | 2007-03-13 | 2014-10-21 | Jds Uniphase Corporation | Method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index |
TWI392756B (zh) * | 2007-06-29 | 2013-04-11 | Hon Hai Prec Ind Co Ltd | 濺鍍用承載裝置 |
WO2009036263A2 (en) | 2007-09-14 | 2009-03-19 | Cardinal Cg Company | Low-maintenance coating technology |
JP4633816B2 (ja) * | 2008-03-31 | 2011-02-16 | 株式会社フェローテック | ターゲット交換式プラズマ発生装置 |
JP4691131B2 (ja) * | 2008-04-28 | 2011-06-01 | キヤノンアネルバ株式会社 | スパッタ成膜方法、電子素子の製造方法、スパッタ装置 |
US20100018855A1 (en) * | 2008-07-24 | 2010-01-28 | Seagate Technology Llc | Inline co-sputter apparatus |
JP5334984B2 (ja) * | 2008-10-16 | 2013-11-06 | 株式会社アルバック | スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法 |
JP5411481B2 (ja) * | 2008-10-22 | 2014-02-12 | 国立大学法人東北大学 | マグネトロンスパッタ装置 |
JP5289035B2 (ja) * | 2008-12-24 | 2013-09-11 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US10586689B2 (en) * | 2009-07-31 | 2020-03-10 | Guardian Europe S.A.R.L. | Sputtering apparatus including cathode with rotatable targets, and related methods |
CN102549190A (zh) * | 2009-08-26 | 2012-07-04 | 佳能安内华股份有限公司 | 成膜设备 |
KR20130059384A (ko) | 2010-06-25 | 2013-06-05 | 캐논 아네르바 가부시키가이샤 | 스퍼터링 장치, 박막증착 방법 및 컨트롤 디바이스 |
EP2591491A1 (en) * | 2010-07-09 | 2013-05-15 | OC Oerlikon Balzers AG | Magnetron sputtering apparatus |
JP5570359B2 (ja) * | 2010-09-10 | 2014-08-13 | キヤノンアネルバ株式会社 | ロータリージョイント、及びスパッタリング装置 |
JP5975653B2 (ja) * | 2011-01-25 | 2016-08-23 | Hoya株式会社 | マスクブランク製造用スパッタリング装置及び表示装置用マスクブランクの製造方法並びに表示装置用マスクの製造方法 |
KR20170104160A (ko) * | 2011-04-26 | 2017-09-14 | 가부시키가이샤 아루박 | 캐소드 유닛 |
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JP6224677B2 (ja) * | 2012-05-09 | 2017-11-01 | シーゲイト テクノロジー エルエルシーSeagate Technology LLC | スパッタリング装置 |
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EP3061127A1 (de) * | 2013-10-24 | 2016-08-31 | Meyer Burger (Germany) AG | Multimagnetronanordnung |
JP6313250B2 (ja) * | 2015-03-11 | 2018-04-18 | 東芝メモリ株式会社 | 半導体製造装置 |
JP6209286B2 (ja) * | 2015-03-20 | 2017-10-04 | 芝浦メカトロニクス株式会社 | 成膜装置及び成膜ワーク製造方法 |
CN105154837B (zh) * | 2015-10-16 | 2017-10-27 | 京东方科技集团股份有限公司 | 一种溅镀设备的靶材更换装置及溅镀设备 |
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DE102018115516A1 (de) * | 2017-06-28 | 2019-01-03 | Solayer Gmbh | Sputtervorrichtung und Sputterverfahren zur Beschichtung von dreidimensional geformten Substratoberflächen |
US10718048B2 (en) * | 2017-06-30 | 2020-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Target structure of physical vapor deposition |
CN111684101B (zh) * | 2018-02-06 | 2023-02-17 | 佳能安内华股份有限公司 | 基板处理装置以及基板处理方法 |
CN108411268A (zh) * | 2018-05-03 | 2018-08-17 | 广东鼎泰高科精工科技有限公司 | 一种可旋转换靶的靶座结构 |
JP2019210517A (ja) * | 2018-06-05 | 2019-12-12 | 株式会社アルバック | スパッタリング装置及び成膜方法 |
GB2588937B (en) * | 2019-11-15 | 2023-01-04 | Dyson Technology Ltd | Sputter deposition |
CN113621929B (zh) * | 2020-05-08 | 2023-04-11 | 武汉光谷创元电子有限公司 | 微波器件的制造设备和制造方法 |
WO2022078592A1 (en) * | 2020-10-14 | 2022-04-21 | Applied Materials, Inc. | Sputter deposition source, deposition apparatus and method of coating a substrate |
JP2022108909A (ja) * | 2021-01-14 | 2022-07-27 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
JP2023027480A (ja) * | 2021-08-17 | 2023-03-02 | 株式会社東芝 | プラズマ源及びスイッチ装置 |
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2001
- 2001-11-05 JP JP2001339827A patent/JP2003147519A/ja active Pending
-
2002
- 2002-09-27 CN CNB021435375A patent/CN1285755C/zh not_active Expired - Fee Related
- 2002-10-23 TW TW91124501A patent/TW573037B/zh not_active IP Right Cessation
- 2002-10-25 US US10/280,035 patent/US6800183B2/en not_active Expired - Lifetime
- 2002-10-29 KR KR1020020066246A patent/KR100948205B1/ko active IP Right Grant
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JPH05171441A (ja) * | 1991-12-17 | 1993-07-09 | Nippon Sheet Glass Co Ltd | スパッタリング装置 |
JPH06122971A (ja) * | 1992-10-12 | 1994-05-06 | Nikon Corp | スパッタリング方法および該方法を用いて作成可能なオーバーライト可能な光磁気記録媒体 |
JPH11209872A (ja) * | 1998-01-22 | 1999-08-03 | Nec Corp | スパッタリング装置及びスパッタリング方法 |
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Also Published As
Publication number | Publication date |
---|---|
TW573037B (en) | 2004-01-21 |
KR20030038384A (ko) | 2003-05-16 |
US20030085122A1 (en) | 2003-05-08 |
CN1417372A (zh) | 2003-05-14 |
US6800183B2 (en) | 2004-10-05 |
JP2003147519A (ja) | 2003-05-21 |
CN1285755C (zh) | 2006-11-22 |
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