JP2021513003A - マグネトロンスパッタリング装置の磁石集合体 - Google Patents
マグネトロンスパッタリング装置の磁石集合体 Download PDFInfo
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- JP2021513003A JP2021513003A JP2020542163A JP2020542163A JP2021513003A JP 2021513003 A JP2021513003 A JP 2021513003A JP 2020542163 A JP2020542163 A JP 2020542163A JP 2020542163 A JP2020542163 A JP 2020542163A JP 2021513003 A JP2021513003 A JP 2021513003A
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- Prior art keywords
- electromagnet
- target
- permanent magnet
- yoke
- magnet assembly
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0205—Magnetic circuits with PM in general
- H01F7/021—Construction of PM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】一実施形態によれば、マグネトロンスパッタリング装置の磁石集合体は、ヨークと、前記ヨーク上に配置し、前記ヨークに垂直な方向を基準にして互いに異なる刺激を有する電磁石と、前記ヨーク上に前記電磁石から離隔して配置し、前記電磁石と反対に形成された刺激を有し、前記電磁石の少なくとも一部を囲む永久磁石を含む。
【選択図】図2
Description
Claims (7)
- ヨークと、
前記ヨーク上に配置し、前記ヨークに垂直な方向を基準にして互いに異なる刺激を有する電磁石と、
前記ヨーク上に前記電磁石から離隔して配置し、前記電磁石の少なくとも一部を取り囲む永久磁石とを、
含む、マグネトロンスパッタリング装置の磁石集合体。 - 前記永久磁石は、前記ヨークに平行な方向に開口されている馬蹄形状を有し、
前記電磁石は、前記永久磁石の内側に備えられる、請求項1に記載のマグネトロンスパッタリング装置の磁石集合体。 - 前記永久磁石は逆「コ」状を有する、請求項2に記載のマグネトロンスパッタリング装置の磁石集合体。
- 前記電磁石に印加される電力が変化することにより、前記マグネトロンスパッタリング装置のターゲット上で垂直磁場がゼロである位置が移動する、請求項2に記載のマグネトロンスパッタリング装置の磁石集合体。
- 前記電磁石は、
前記ヨーク上に固定され、前記永久磁石内側に備えられるコアと、
前記コアに取り巻かれるコイルとを、
含む、請求項4に記載のマグネトロンスパッタリング装置の磁石集合体。 - 前記コイルに印加される電力を変化させる制御部をさらに含む、請求項5に記載のマグネトロンスパッタリング装置の磁石集合体。
- 前記電磁石から前記永久磁石の中央部までの距離は、前記電磁石から前記永久磁石の側部までの距離と同一であるか、より大きい、請求項1に記載のマグネトロンスパッタリング装置の磁石集合体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0017451 | 2018-02-13 | ||
KR1020180017451A KR102420329B1 (ko) | 2018-02-13 | 2018-02-13 | 마그네트론 스퍼터링 장치의 자석 집합체 |
PCT/KR2019/001559 WO2019160273A1 (ko) | 2018-02-13 | 2019-02-08 | 마그네트론 스퍼터링 장치의 자석 집합체 |
Publications (2)
Publication Number | Publication Date |
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JP2021513003A true JP2021513003A (ja) | 2021-05-20 |
JP7301857B2 JP7301857B2 (ja) | 2023-07-03 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020542163A Active JP7301857B2 (ja) | 2018-02-13 | 2019-02-08 | マグネトロンスパッタリング装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7301857B2 (ja) |
KR (1) | KR102420329B1 (ja) |
CN (1) | CN111373505A (ja) |
TW (1) | TWI809039B (ja) |
WO (1) | WO2019160273A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114507848A (zh) * | 2022-01-21 | 2022-05-17 | 纳诺精机(大连)有限公司 | 提高铝锡铜合金镀膜溅射速率的方法 |
KR20230147450A (ko) | 2022-04-14 | 2023-10-23 | 한국전기연구원 | 대면적 박막 스퍼터링 장치 및 이를 이용한 대면적 박막 증착방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583975A (ja) * | 1981-06-29 | 1983-01-10 | Hitachi Ltd | スパツタリングによる成膜方法及びその装置 |
JPH02111874A (ja) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | スパッタリング方法 |
JP2013524016A (ja) * | 2010-04-02 | 2013-06-17 | ヌボサン, インコーポレイテッド | 回転式マグネトロンのための標的利用改善 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0525625A (ja) * | 1991-02-17 | 1993-02-02 | Ulvac Japan Ltd | マグネトロンスパツタカソード |
US5364518A (en) * | 1991-05-28 | 1994-11-15 | Leybold Aktiengesellschaft | Magnetron cathode for a rotating target |
KR100369276B1 (ko) * | 2000-09-05 | 2003-01-24 | 아이티엠 주식회사 | 마그네트론 스퍼터링 장치의 타겟 표면에 형성되는 자기장위치를 가변시켜 다양한 화합물 박막 조성을 얻는 방법 |
KR100529915B1 (ko) * | 2003-08-12 | 2005-11-22 | 엘지전자 주식회사 | 마그네트론 스퍼터링 장치 및 그 동작방법 |
JP2006161062A (ja) * | 2004-12-02 | 2006-06-22 | Shin Meiwa Ind Co Ltd | マグネトロンスパッタリング成膜装置及びその電極構造 |
DE102005019101A1 (de) * | 2005-04-25 | 2006-10-26 | Steag Hama Tech Ag | Verfahren und Vorrichtung zum Beschichten von Substraten |
WO2008059814A1 (fr) * | 2006-11-17 | 2008-05-22 | Ulvac, Inc. | Electrode de pulvérisation de magnétron et dispositif de pulvérisation muni de l'électrode de pulvérisation de magnétron |
JP4509097B2 (ja) * | 2006-12-26 | 2010-07-21 | 日立金属株式会社 | マグネトロンスパッタリング用磁気回路 |
JP5025334B2 (ja) * | 2007-05-28 | 2012-09-12 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置 |
JP5461264B2 (ja) * | 2010-03-25 | 2014-04-02 | キヤノンアネルバ株式会社 | マグネトロンスパッタリング装置、及び、スパッタリング方法 |
KR20140003570A (ko) * | 2011-01-24 | 2014-01-09 | 히타치 긴조쿠 가부시키가이샤 | 마그네트론 스퍼터링용 자장 발생 장치 |
JP5850713B2 (ja) * | 2011-11-11 | 2016-02-03 | 株式会社アルバック | マグネトロンスパッタリング装置及びマグネトロンスパッタリング方法 |
KR101341433B1 (ko) * | 2012-04-19 | 2013-12-13 | 주식회사 에스에프에이 | 마그네트론 스퍼터링 장치 |
JP2016160522A (ja) * | 2015-03-05 | 2016-09-05 | 日立金属株式会社 | ターゲット |
CN206308414U (zh) * | 2016-12-27 | 2017-07-07 | 上海子创镀膜技术有限公司 | 一种提高靶材利用率的新型平面阴极 |
CN107083537B (zh) * | 2017-05-02 | 2019-10-01 | 三河市衡岳真空设备有限公司 | 新型高靶材利用率平面磁控溅射阴极 |
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- 2018-02-13 KR KR1020180017451A patent/KR102420329B1/ko active IP Right Grant
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2019
- 2019-02-08 CN CN201980005902.5A patent/CN111373505A/zh active Pending
- 2019-02-08 WO PCT/KR2019/001559 patent/WO2019160273A1/ko active Application Filing
- 2019-02-08 JP JP2020542163A patent/JP7301857B2/ja active Active
- 2019-02-12 TW TW108104541A patent/TWI809039B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583975A (ja) * | 1981-06-29 | 1983-01-10 | Hitachi Ltd | スパツタリングによる成膜方法及びその装置 |
JPH02111874A (ja) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | スパッタリング方法 |
JP2013524016A (ja) * | 2010-04-02 | 2013-06-17 | ヌボサン, インコーポレイテッド | 回転式マグネトロンのための標的利用改善 |
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Publication number | Publication date |
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WO2019160273A1 (ko) | 2019-08-22 |
TW201941255A (zh) | 2019-10-16 |
JP7301857B2 (ja) | 2023-07-03 |
KR102420329B1 (ko) | 2022-07-14 |
KR20190097699A (ko) | 2019-08-21 |
TWI809039B (zh) | 2023-07-21 |
CN111373505A (zh) | 2020-07-03 |
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