JP7301857B2 - マグネトロンスパッタリング装置 - Google Patents
マグネトロンスパッタリング装置 Download PDFInfo
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- JP7301857B2 JP7301857B2 JP2020542163A JP2020542163A JP7301857B2 JP 7301857 B2 JP7301857 B2 JP 7301857B2 JP 2020542163 A JP2020542163 A JP 2020542163A JP 2020542163 A JP2020542163 A JP 2020542163A JP 7301857 B2 JP7301857 B2 JP 7301857B2
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- JP
- Japan
- Prior art keywords
- target
- electromagnet
- permanent magnet
- substrate
- yoke
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0205—Magnetic circuits with PM in general
- H01F7/021—Construction of PM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/06—Electromagnets; Actuators including electromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (3)
- スパッタされる表面を有するターゲットと、
前記ターゲットの表面とは反対側に対向して配置され、第1の軸方向に長手であり、前記第1の軸方向とは直交する第2の軸方向に短手であるプレート形状のヨークと、
第1の磁極を前記ターゲットに向けて前記ヨーク上に配置された馬蹄形状である第1の永久磁石と、
前記第1の磁極とは異なる第2の磁極を前記ターゲットに向けて前記ヨーク上に配置された第2の永久磁石と、前記第2の永久磁石に取り巻かれるコイルと、を有し、前記馬蹄形状である第1の永久磁石の内側に配置される電磁石と
を有し、前記第1の磁極と前記第2の磁極とによって磁場が前記ターゲットの表面で形成される磁石集合体と、
前記コイルに印加される電力を変化させることにより、前記磁場のうち前記ターゲット表面とは垂直である垂直磁場がゼロである位置を前記ターゲットの表面内で移動させる制御部と
を具備するマグネトロンスパッタリング装置。 - 前記第1の永久磁石は逆「コ」状を有する、請求項1に記載のマグネトロンスパッタリング装置。
- 前記第1の永久磁石は、前記第2の軸方向に平行な中央部と、前記中央部の両端から前記第1の軸方向に延びる側部と、を有し、
前記電磁石から前記中央部までの距離は、前記電磁石から前記側部までの距離と同一であるか、より大きい、請求項1に記載のマグネトロンスパッタリング装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0017451 | 2018-02-13 | ||
KR1020180017451A KR102420329B1 (ko) | 2018-02-13 | 2018-02-13 | 마그네트론 스퍼터링 장치의 자석 집합체 |
PCT/KR2019/001559 WO2019160273A1 (ko) | 2018-02-13 | 2019-02-08 | 마그네트론 스퍼터링 장치의 자석 집합체 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021513003A JP2021513003A (ja) | 2021-05-20 |
JP7301857B2 true JP7301857B2 (ja) | 2023-07-03 |
Family
ID=67619986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020542163A Active JP7301857B2 (ja) | 2018-02-13 | 2019-02-08 | マグネトロンスパッタリング装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7301857B2 (ja) |
KR (1) | KR102420329B1 (ja) |
CN (1) | CN111373505A (ja) |
TW (1) | TWI809039B (ja) |
WO (1) | WO2019160273A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114507848A (zh) * | 2022-01-21 | 2022-05-17 | 纳诺精机(大连)有限公司 | 提高铝锡铜合金镀膜溅射速率的方法 |
KR20230147450A (ko) | 2022-04-14 | 2023-10-23 | 한국전기연구원 | 대면적 박막 스퍼터링 장치 및 이를 이용한 대면적 박막 증착방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013524016A (ja) | 2010-04-02 | 2013-06-17 | ヌボサン, インコーポレイテッド | 回転式マグネトロンのための標的利用改善 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS583975A (ja) * | 1981-06-29 | 1983-01-10 | Hitachi Ltd | スパツタリングによる成膜方法及びその装置 |
JPH02111874A (ja) * | 1988-10-20 | 1990-04-24 | Fuji Photo Film Co Ltd | スパッタリング方法 |
JPH0525625A (ja) * | 1991-02-17 | 1993-02-02 | Ulvac Japan Ltd | マグネトロンスパツタカソード |
US5364518A (en) * | 1991-05-28 | 1994-11-15 | Leybold Aktiengesellschaft | Magnetron cathode for a rotating target |
KR100369276B1 (ko) * | 2000-09-05 | 2003-01-24 | 아이티엠 주식회사 | 마그네트론 스퍼터링 장치의 타겟 표면에 형성되는 자기장위치를 가변시켜 다양한 화합물 박막 조성을 얻는 방법 |
KR100529915B1 (ko) * | 2003-08-12 | 2005-11-22 | 엘지전자 주식회사 | 마그네트론 스퍼터링 장치 및 그 동작방법 |
JP2006161062A (ja) * | 2004-12-02 | 2006-06-22 | Shin Meiwa Ind Co Ltd | マグネトロンスパッタリング成膜装置及びその電極構造 |
DE102005019101A1 (de) * | 2005-04-25 | 2006-10-26 | Steag Hama Tech Ag | Verfahren und Vorrichtung zum Beschichten von Substraten |
WO2008059814A1 (fr) * | 2006-11-17 | 2008-05-22 | Ulvac, Inc. | Electrode de pulvérisation de magnétron et dispositif de pulvérisation muni de l'électrode de pulvérisation de magnétron |
JP4509097B2 (ja) * | 2006-12-26 | 2010-07-21 | 日立金属株式会社 | マグネトロンスパッタリング用磁気回路 |
JP5025334B2 (ja) * | 2007-05-28 | 2012-09-12 | 株式会社アルバック | マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置 |
JP5461264B2 (ja) * | 2010-03-25 | 2014-04-02 | キヤノンアネルバ株式会社 | マグネトロンスパッタリング装置、及び、スパッタリング方法 |
KR20140003570A (ko) * | 2011-01-24 | 2014-01-09 | 히타치 긴조쿠 가부시키가이샤 | 마그네트론 스퍼터링용 자장 발생 장치 |
JP5850713B2 (ja) * | 2011-11-11 | 2016-02-03 | 株式会社アルバック | マグネトロンスパッタリング装置及びマグネトロンスパッタリング方法 |
KR101341433B1 (ko) * | 2012-04-19 | 2013-12-13 | 주식회사 에스에프에이 | 마그네트론 스퍼터링 장치 |
JP2016160522A (ja) * | 2015-03-05 | 2016-09-05 | 日立金属株式会社 | ターゲット |
CN206308414U (zh) * | 2016-12-27 | 2017-07-07 | 上海子创镀膜技术有限公司 | 一种提高靶材利用率的新型平面阴极 |
CN107083537B (zh) * | 2017-05-02 | 2019-10-01 | 三河市衡岳真空设备有限公司 | 新型高靶材利用率平面磁控溅射阴极 |
-
2018
- 2018-02-13 KR KR1020180017451A patent/KR102420329B1/ko active IP Right Grant
-
2019
- 2019-02-08 CN CN201980005902.5A patent/CN111373505A/zh active Pending
- 2019-02-08 WO PCT/KR2019/001559 patent/WO2019160273A1/ko active Application Filing
- 2019-02-08 JP JP2020542163A patent/JP7301857B2/ja active Active
- 2019-02-12 TW TW108104541A patent/TWI809039B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013524016A (ja) | 2010-04-02 | 2013-06-17 | ヌボサン, インコーポレイテッド | 回転式マグネトロンのための標的利用改善 |
Also Published As
Publication number | Publication date |
---|---|
WO2019160273A1 (ko) | 2019-08-22 |
TW201941255A (zh) | 2019-10-16 |
JP2021513003A (ja) | 2021-05-20 |
KR102420329B1 (ko) | 2022-07-14 |
KR20190097699A (ko) | 2019-08-21 |
TWI809039B (zh) | 2023-07-21 |
CN111373505A (zh) | 2020-07-03 |
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