JP5289035B2 - スパッタリング装置 - Google Patents
スパッタリング装置 Download PDFInfo
- Publication number
- JP5289035B2 JP5289035B2 JP2008327696A JP2008327696A JP5289035B2 JP 5289035 B2 JP5289035 B2 JP 5289035B2 JP 2008327696 A JP2008327696 A JP 2008327696A JP 2008327696 A JP2008327696 A JP 2008327696A JP 5289035 B2 JP5289035 B2 JP 5289035B2
- Authority
- JP
- Japan
- Prior art keywords
- rotating member
- power supply
- target
- supply terminal
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
12a、12b、12c ターゲット
16 電源
20,20a,20b,20c,20d 回転部材
22 給電端子
25a、25b、25c 接続端子
26a、26b、26c 電極
27a、27b、27c 配線
29a、29b、29c 絶縁体
Claims (6)
- ターゲットが取り付けられる回転自在な回転部材と、
前記ターゲットと電気的に接続され、前記回転部材の回転軸に沿った方向の前記回転部材の端部に配置された接続端子と、
回転軸方向に往復移動可能に構成され、前記接続端子を介して前記ターゲットに電力を供給する給電端子と、を有し、
前記給電端子を前記往復移動させることにより、前記給電端子を前記接続端子と接触または離間させ、前記給電端子と前記接続端子との導通または絶縁を切り替え可能であり、
前記給電端子と前記接続端子との少なくとも一方が、前記回転部材の回転方向に沿って延びていることを特徴とするスパッタリング装置。 - 前記回転部材は前記ターゲットを複数取り付け可能に構成されており、
前記回転部材の前記端部には、前記ターゲットのそれぞれと接続される前記接続端子が配置されており、
それぞれの前記接続端子は、前記回転部材の回転方向に並べられている、請求項1に記載のスパッタリング装置。 - 前記回転部材の回転にともなって、前記給電端子と接続される前記接続端子が切り替わる、請求項1又は2に記載のスパッタリング装置。
- 前記回転部材に取り付けられている前記ターゲットの表面に磁束を発生させるマグネットが、前記回転部材の内部に配されている、請求項1から3のいずれか1項に記載のスパッタリング装置。
- 前記回転部材が少なくとも2つ設置されている、請求項1から4のいずれか1項に記載のスパッタリング装置。
- 前記回転部材の、前記ターゲットが取り付けられる面に対向して配置され、処理を行う基体を保持するホルダーをさらに備える、請求項1から5のいずれか1項に記載のスパッタリング装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008327696A JP5289035B2 (ja) | 2008-12-24 | 2008-12-24 | スパッタリング装置 |
US12/639,220 US20100155228A1 (en) | 2008-12-24 | 2009-12-16 | Sputtering apparatus and method of manufacturing electronic device |
CN2009102663592A CN101792896B (zh) | 2008-12-24 | 2009-12-24 | 溅射设备及制造电子器件的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008327696A JP5289035B2 (ja) | 2008-12-24 | 2008-12-24 | スパッタリング装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010150579A JP2010150579A (ja) | 2010-07-08 |
JP2010150579A5 JP2010150579A5 (ja) | 2013-03-07 |
JP5289035B2 true JP5289035B2 (ja) | 2013-09-11 |
Family
ID=42264457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008327696A Active JP5289035B2 (ja) | 2008-12-24 | 2008-12-24 | スパッタリング装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100155228A1 (ja) |
JP (1) | JP5289035B2 (ja) |
CN (1) | CN101792896B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102268647A (zh) * | 2011-06-28 | 2011-12-07 | 黄峰 | 旋转靶用驱动端头装置 |
US20160049279A1 (en) * | 2014-08-14 | 2016-02-18 | Allied Techfinders Co., Ltd. | Plasma device |
CN111719123B (zh) * | 2019-03-21 | 2024-08-02 | 广东太微加速器有限公司 | 组合式靶件 |
WO2022074893A1 (ja) * | 2020-10-08 | 2022-04-14 | 株式会社アルバック | 回転式カソードユニット用の駆動ブロック |
JP2023069790A (ja) * | 2021-11-08 | 2023-05-18 | 株式会社シンクロン | スパッタ成膜装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62111770U (ja) * | 1985-12-27 | 1987-07-16 | ||
US5444398A (en) * | 1992-12-17 | 1995-08-22 | Siemens Aktiengesellschaft | Decoded-source sense amplifier with special column select driver voltage |
US5527439A (en) * | 1995-01-23 | 1996-06-18 | The Boc Group, Inc. | Cylindrical magnetron shield structure |
JPH1192924A (ja) * | 1997-09-16 | 1999-04-06 | Raiku:Kk | スパッタリング装置 |
JP2003147519A (ja) * | 2001-11-05 | 2003-05-21 | Anelva Corp | スパッタリング装置 |
JP5036501B2 (ja) * | 2007-11-19 | 2012-09-26 | 小島プレス工業株式会社 | 基材の支持装置及びスパッタリング装置 |
-
2008
- 2008-12-24 JP JP2008327696A patent/JP5289035B2/ja active Active
-
2009
- 2009-12-16 US US12/639,220 patent/US20100155228A1/en not_active Abandoned
- 2009-12-24 CN CN2009102663592A patent/CN101792896B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US20100155228A1 (en) | 2010-06-24 |
CN101792896A (zh) | 2010-08-04 |
JP2010150579A (ja) | 2010-07-08 |
CN101792896B (zh) | 2012-09-26 |
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