KR100937082B1 - 기판처리장치 및 기판처리방법 - Google Patents

기판처리장치 및 기판처리방법 Download PDF

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Publication number
KR100937082B1
KR100937082B1 KR1020030001573A KR20030001573A KR100937082B1 KR 100937082 B1 KR100937082 B1 KR 100937082B1 KR 1020030001573 A KR1020030001573 A KR 1020030001573A KR 20030001573 A KR20030001573 A KR 20030001573A KR 100937082 B1 KR100937082 B1 KR 100937082B1
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South Korea
Prior art keywords
substrate
unit
inspection
processing
station
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Expired - Lifetime
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KR1020030001573A
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English (en)
Korean (ko)
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KR20030061344A (ko
Inventor
센바노리오
미야타아키라
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도쿄엘렉트론가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020030001573A 2002-01-11 2003-01-10 기판처리장치 및 기판처리방법 Expired - Lifetime KR100937082B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00004971 2002-01-11
JP2002004971A JP3916468B2 (ja) 2002-01-11 2002-01-11 基板処理装置および基板処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090101700A Division KR100937083B1 (ko) 2002-01-11 2009-10-26 기판처리장치 및 기판처리방법

Publications (2)

Publication Number Publication Date
KR20030061344A KR20030061344A (ko) 2003-07-18
KR100937082B1 true KR100937082B1 (ko) 2010-01-15

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KR1020030001573A Expired - Lifetime KR100937082B1 (ko) 2002-01-11 2003-01-10 기판처리장치 및 기판처리방법
KR1020090101700A Expired - Lifetime KR100937083B1 (ko) 2002-01-11 2009-10-26 기판처리장치 및 기판처리방법

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Country Status (3)

Country Link
US (1) US6722798B2 (enExample)
JP (1) JP3916468B2 (enExample)
KR (2) KR100937082B1 (enExample)

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KR100512006B1 (ko) * 2001-03-06 2005-09-02 삼성전자주식회사 웨이퍼 주연 부위의 노광 방법 및 이를 수행하기 위한 장치
JP4842513B2 (ja) * 2002-03-12 2011-12-21 オリンパス株式会社 半導体製造方法及びその装置
JP4105617B2 (ja) 2003-09-19 2008-06-25 大日本スクリーン製造株式会社 基板処理装置
JP2008509011A (ja) * 2004-08-04 2008-03-27 カムテック エルティーディー． 物体を分配するためのシステム
JP4422000B2 (ja) * 2004-11-16 2010-02-24 東京エレクトロン株式会社 基板処理方法、制御プログラム、およびコンピューター記憶媒体
JP4955977B2 (ja) * 2005-01-21 2012-06-20 東京エレクトロン株式会社 塗布、現像装置及びその方法
US7245348B2 (en) * 2005-01-21 2007-07-17 Tokyo Electron Limited Coating and developing system and coating and developing method with antireflection film and an auxiliary block for inspection and cleaning
JP4632086B2 (ja) 2005-06-21 2011-02-16 アイシン精機株式会社 荷重検出装置及び荷重検出方法
ATE552918T1 (de) * 2005-08-24 2012-04-15 Brother Ind Ltd Vorrichtung und verfahren zur erzeugung von schichten und herstellungsverfahren für einen piezoelektrischen aktuator
JP4450784B2 (ja) * 2005-10-19 2010-04-14 東京エレクトロン株式会社 塗布、現像装置及びその方法
JP4762743B2 (ja) * 2006-02-09 2011-08-31 東京エレクトロン株式会社 熱処理装置
JP4816217B2 (ja) * 2006-04-14 2011-11-16 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及び記憶媒体
US20070250202A1 (en) * 2006-04-17 2007-10-25 Tokyo Electron Limited Coating and developing system, method of controlling coating and developing system and storage medium
JP2007287909A (ja) * 2006-04-17 2007-11-01 Tokyo Electron Ltd 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
JP4560022B2 (ja) * 2006-09-12 2010-10-13 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の制御方法並びに記憶媒体
US7478014B2 (en) * 2006-09-29 2009-01-13 Tokyo Electron Limited Method and system for facilitating preventive maintenance of an optical inspection tool
JP4786499B2 (ja) * 2006-10-26 2011-10-05 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4850664B2 (ja) * 2006-11-02 2012-01-11 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
EP1965381B1 (en) * 2007-03-02 2010-08-04 Singulus Mastering B.V. Control Method for Integrated Mastering System
JP4877075B2 (ja) * 2007-05-29 2012-02-15 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の運転方法並びに記憶媒体
JP4957426B2 (ja) 2007-07-19 2012-06-20 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像装置の運転方法並びに記憶媒体
JP4983724B2 (ja) * 2008-05-27 2012-07-25 東京エレクトロン株式会社 塗布、現像装置及び塗布、現像方法並びに記憶媒体
JP2010192623A (ja) * 2009-02-17 2010-09-02 Renesas Electronics Corp 半導体装置の製造装置、その制御方法、及びその制御プログラム
JP5223778B2 (ja) 2009-05-28 2013-06-26 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5410212B2 (ja) * 2009-09-15 2014-02-05 株式会社Ｓｏｋｕｄｏ 基板処理装置、基板処理システムおよび検査周辺露光装置
JP2012080077A (ja) * 2010-09-06 2012-04-19 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP5566265B2 (ja) * 2010-11-09 2014-08-06 東京エレクトロン株式会社 基板処理装置、プログラム、コンピュータ記憶媒体及び基板の搬送方法
JP5575691B2 (ja) 2011-04-06 2014-08-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体
JP5459279B2 (ja) * 2011-09-02 2014-04-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
TWI550686B (zh) * 2011-11-04 2016-09-21 東京威力科創股份有限公司 基板處理系統、基板運送方法及電腦記憶媒體
JP5584241B2 (ja) * 2012-02-27 2014-09-03 株式会社東芝 半導体製造装置及び半導体デバイスの製造方法
US9685357B2 (en) 2013-10-31 2017-06-20 Semes Co., Ltd. Apparatus for treating substrate
JP5837150B2 (ja) * 2014-07-01 2015-12-24 東京エレクトロン株式会社 基板処理方法及びその基板処理方法を実行させるためのプログラムを記録した記録媒体
CN113363175B (zh) * 2020-03-05 2024-06-11 联华电子股份有限公司 设有基板扫描器的基板处理设备
JP7503414B2 (ja) * 2020-04-22 2024-06-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法

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JPH11238776A (ja) * 1998-02-20 1999-08-31 Hirata Corp 基板製造ラインおよび基板製造方法

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JPH11186358A (ja) * 1997-12-22 1999-07-09 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理システム
JPH11238776A (ja) * 1998-02-20 1999-08-31 Hirata Corp 基板製造ラインおよび基板製造方法

Also Published As

Publication number Publication date
JP2003209154A (ja) 2003-07-25
KR100937083B1 (ko) 2010-01-15
KR20090119815A (ko) 2009-11-20
US20030133086A1 (en) 2003-07-17
US6722798B2 (en) 2004-04-20
JP3916468B2 (ja) 2007-05-16
KR20030061344A (ko) 2003-07-18

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