KR100934046B1 - 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법 - Google Patents

감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법 Download PDF

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KR100934046B1
KR100934046B1 KR1020087028775A KR20087028775A KR100934046B1 KR 100934046 B1 KR100934046 B1 KR 100934046B1 KR 1020087028775 A KR1020087028775 A KR 1020087028775A KR 20087028775 A KR20087028775 A KR 20087028775A KR 100934046 B1 KR100934046 B1 KR 100934046B1
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resin composition
photosensitive resin
photosensitive
phenyl
component
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KR20080108624A (ko
Inventor
마사히로 미야사카
타카시 쿠마키
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히다치 가세고교 가부시끼가이샤
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Priority claimed from JP2006105416A external-priority patent/JP4525626B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/116—Redox or dye sensitizer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
KR1020087028775A 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법 Active KR100934046B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005150133 2005-05-23
JPJP-P-2005-150133 2005-05-23
JP2006105416A JP4525626B2 (ja) 2006-04-06 2006-04-06 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JPJP-P-2006-105416 2006-04-06
PCT/JP2006/310134 WO2006126480A1 (ja) 2005-05-23 2006-05-22 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法

Related Parent Applications (1)

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KR1020077023383A Division KR100935779B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의형성방법 및 프린트 배선판의 제조방법

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KR20080108624A KR20080108624A (ko) 2008-12-15
KR100934046B1 true KR100934046B1 (ko) 2009-12-24

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KR1020087028775A Active KR100934046B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법
KR1020077023383A Active KR100935779B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의형성방법 및 프린트 배선판의 제조방법
KR1020097021746A Active KR100953245B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법
KR1020087028774A Active KR100932581B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법

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KR1020097021746A Active KR100953245B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법
KR1020087028774A Active KR100932581B1 (ko) 2005-05-23 2006-05-22 감광성 수지 조성물, 감광성 엘리먼트, 레지스트 패턴의 형성방법 및 프린트 배선판의 제조방법

Country Status (6)

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US (3) US7993809B2 (https=)
KR (4) KR100934046B1 (https=)
CN (5) CN104111583B (https=)
SG (1) SG160355A1 (https=)
TW (2) TW200702916A (https=)
WO (1) WO2006126480A1 (https=)

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JP5117234B2 (ja) * 2008-03-21 2013-01-16 旭化成イーマテリアルズ株式会社 感光性樹脂組成物および積層体
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JP5117233B2 (ja) * 2008-03-21 2013-01-16 旭化成イーマテリアルズ株式会社 感光性樹脂組成物および積層体
JP5327310B2 (ja) * 2009-02-26 2013-10-30 日立化成株式会社 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
KR101719025B1 (ko) * 2010-04-15 2017-03-22 닛코-매터리얼즈 가부시키가이샤 감광성 수지 조성물, 이를 이용한 포토레지스트 필름, 레지스트 패턴의 형성 방법 및 프린트 배선판의 제조 방법
PH12013500757A1 (en) 2010-12-16 2013-06-03 Resonac Corp Photosensitive element, method for forming resist pattern, and method for producing printed circuit board
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JP6229256B2 (ja) * 2011-10-31 2017-11-15 日立化成株式会社 感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
WO2013084283A1 (ja) 2011-12-05 2013-06-13 日立化成株式会社 タッチパネル用電極の保護膜の形成方法、感光性樹脂組成物及び感光性エレメント
WO2013084282A1 (ja) 2011-12-05 2013-06-13 日立化成株式会社 樹脂硬化膜パターンの形成方法、感光性樹脂組成物及び感光性エレメント
US9341946B2 (en) * 2012-05-25 2016-05-17 Lg Chem, Ltd. Photosensitive resin composition, pattern formed using same and display panel comprising same
CN104871045B (zh) * 2013-06-07 2018-02-02 株式会社艾迪科 着色感光性组合物和化合物
MY190719A (en) * 2014-05-23 2022-05-12 Showa Denko Materials Co Ltd Method for forming resist pattern, method for manufacturing printed wiring board, photosensitive resin composition for projection exposure and photosensitive element
KR102061130B1 (ko) * 2015-05-21 2020-02-20 창저우 트론리 어드벤스드 일렉트로닉 머티어리얼스 컴퍼니, 리미티드 피라졸린계 증감제 및 그 제조방법과 응용
JP6911369B2 (ja) * 2017-02-15 2021-07-28 Tdk株式会社 積層コイル部品の製造方法
KR20260006056A (ko) * 2019-10-16 2026-01-12 가부시끼가이샤 레조낙 감광성 수지 필름, 레지스트 패턴의 형성 방법, 및 배선 패턴의 형성 방법
CN113929624A (zh) * 2020-07-13 2022-01-14 常州强力电子新材料股份有限公司 一种吡唑啉类化合物、感光性树脂组合物及图形化方法
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CN104111583A (zh) 2014-10-22
US20100279229A1 (en) 2010-11-04
US20090029289A1 (en) 2009-01-29
US8192916B2 (en) 2012-06-05
US8198008B2 (en) 2012-06-12
TW200702916A (en) 2007-01-16
KR20080108624A (ko) 2008-12-15
CN104111583B (zh) 2019-01-01
SG160355A1 (en) 2010-04-29
TWI417663B (zh) 2013-12-01
KR20070110937A (ko) 2007-11-20
CN104133342A (zh) 2014-11-05
TWI334965B (https=) 2010-12-21
WO2006126480A1 (ja) 2006-11-30
US20100285408A1 (en) 2010-11-11
CN101180578A (zh) 2008-05-14
KR100935779B1 (ko) 2010-01-06
KR100953245B1 (ko) 2010-04-16
CN104133343B (zh) 2016-11-16
KR20100009547A (ko) 2010-01-27
US7993809B2 (en) 2011-08-09
KR20080108623A (ko) 2008-12-15
CN104133342B (zh) 2018-01-23
TW201100961A (en) 2011-01-01
KR100932581B1 (ko) 2009-12-17
CN102012634A (zh) 2011-04-13
CN104133343A (zh) 2014-11-05

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