KR100930801B1 - 반도체 세라믹, 적층형 반도체 세라믹 커패시터, 반도체세라믹의 제조방법, 및 적층형 반도체 세라믹 커패시터의제조방법 - Google Patents
반도체 세라믹, 적층형 반도체 세라믹 커패시터, 반도체세라믹의 제조방법, 및 적층형 반도체 세라믹 커패시터의제조방법 Download PDFInfo
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- KR100930801B1 KR100930801B1 KR1020087006167A KR20087006167A KR100930801B1 KR 100930801 B1 KR100930801 B1 KR 100930801B1 KR 1020087006167 A KR1020087006167 A KR 1020087006167A KR 20087006167 A KR20087006167 A KR 20087006167A KR 100930801 B1 KR100930801 B1 KR 100930801B1
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Abstract
Description
Claims (10)
- SrTiO3계 입계 절연형의 반도체 세라믹으로서,도너 원소가 Ti 원소 100몰에 대하여 0.8~2.0몰의 범위로 결정 입자 중에 고용됨과 동시에, 억셉터 원소가 상기 도너 원소보다도 적은 양으로 상기 결정 입자 중에 고용되고,또한, 억셉터 원소가 상기 Ti 원소 100몰에 대하여 0.3~1.0몰의 범위로 결정 입계 중에 존재하면서,결정 입자의 평균 입경이 1.0㎛이하인 것을 특징으로 하는 반도체 세라믹.
- 제1항에 있어서, 상기 도너 원소에는, La, Sm, Dy, Ho, Y, Nd, Ce, Nb, Ta, 및 W 중에서 선택된 적어도 1종의 원소가 포함되는 것을 특징으로 하는 반도체 세라믹.
- 제1항 또는 제2항에 있어서, 상기 억셉터 원소에는, Mn, Co, Ni, 및 Cr 중 적어도 1종의 원소가 포함되는 것을 특징으로 하는 반도체 세라믹.
- 제1항 또는 제2항에 있어서, 상기 결정 입자 중에 함유되는 억셉터 원소와 상기 결정 입계 중에 존재하는 억셉터 원소는 동일 원소인 것을 특징으로 하는 반도체 세라믹.
- 제1항 또는 제2항에 있어서, 상기 결정 입자 중에 함유되는 억셉터 원소와 상기 결정 입계 중에 존재하는 억셉터 원소는 이종(異種) 원소인 것을 특징으로 하는 반도체 세라믹.
- 제1항 또는 제2항에 있어서, 저융점 산화물이 상기 Ti 원소 100몰에 대하여 0.1몰 이하의 범위로 포함되어 있는 것을 특징으로 하는 반도체 세라믹.
- 제6항에 있어서, 상기 저융점 산화물이 SiO2인 것을 특징으로 하는 반도체 세라믹.
- 제1항 또는 제2항에 기재된 반도체 세라믹으로 부품 소체가 형성됨과 동시에, 내부전극이 상기 부품 소체에 마련되면서, 상기 부품 소체의 표면에 상기 내부전극과 전기적으로 접속 가능해진 외부전극이 형성되어 있는 것을 특징으로 하는 적층형 반도체 세라믹 커패시터.
- SrTiO3계 입계 절연형의 반도체 세라믹의 제조방법으로서,도너 화합물 및 억셉터 화합물을 포함하는 세라믹 소원료(ceramic raw material)를 소정량 칭량하여 혼합 분쇄한 후, 가소 처리를 행하여 가소 분말을 제작하는 가소 분말 제작공정과,소정량의 억셉터 화합물을 상기 가소 분말과 혼합하고, 열처리를 행하여 열처리 분말을 제작하는 열처리 분말 제작공정과,상기 열처리 분말에 환원 분위기하에서의 1차 소성처리를 행한 후, 약환원 분위기하, 대기 분위기하, 또는 산화 분위기하에서 2차 소성처리를 행하는 소성 공정을 포함하고,상기 도너 화합물은 도너 원소가 Ti 원소 100몰에 대하여 0.8~2.0몰의 범위가 되도록 칭량함과 동시에, 상기 소정량의 억셉터 화합물은 억셉터 원소가 상기 Ti 원소 100몰에 대하여 0.3~1.0몰의 범위가 되도록 칭량하여, 상기 가소 분말과 혼합하는 것을 특징으로 하는 반도체 세라믹의 제조방법.
- SrTiO3계 입계 절연형의 적층형 반도체 세라믹 커패시터의 제조방법으로서,도너 화합물 및 억셉터 화합물을 포함하는 세라믹 소원료를 소정량 칭량하여 혼합 분쇄한 후, 가소 처리를 행하여 가소 분말을 제작하는 가소 분말 제작공정과,소정량의 억셉터 화합물을 상기 가소 분말과 혼합하고, 열처리를 행하여 열처리 분말을 제작하는 열처리 분말 제작공정과,상기 열처리 분말에 성형 가공을 가하여 세라믹 그린시트를 제작하고, 그 후 내부전극층과 세라믹 그린시트를 교대로 적층하여 세라믹 적층체를 형성하는 세라믹 적층체 형성공정과,환원 분위기하, 상기 세라믹 적층체에 1차 소성처리를 행한 후, 약환원 분위기하, 대기 분위기하, 또는 산화 분위기하에서 2차 소성처리를 행하는 소성 공정을 포함하고,상기 도너 화합물은 도너 원소가 Ti 원소 100몰에 대하여 0.8~2.0몰의 범위가 되도록 칭량함과 동시에, 상기 소정량의 억셉터 화합물은 억셉터 원소가 상기 Ti 원소 100몰에 대하여 0.3~1.0몰의 범위가 되도록 칭량하여, 상기 가소 분말과 혼합하고,상기 1차 소성처리는 승온, 소성, 냉각의 각 과정을 가지는 소성 프로파일에 근거하여 실행함과 동시에, 냉각 개시시의 산소 분압을 소성과정에 있어서의 산소 분압의 1.0×104배 이상으로 설정하는 것을 특징으로 하는 적층형 반도체 세라믹 커패시터의 제조방법.
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JP5418993B2 (ja) * | 2011-01-05 | 2014-02-19 | 株式会社村田製作所 | 積層型半導体セラミックコンデンサの製造方法、及び積層型半導体セラミックコンデンサ |
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