KR100910681B1 - 에칭 방법 및 에칭 장치 - Google Patents

에칭 방법 및 에칭 장치 Download PDF

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Publication number
KR100910681B1
KR100910681B1 KR1020077014786A KR20077014786A KR100910681B1 KR 100910681 B1 KR100910681 B1 KR 100910681B1 KR 1020077014786 A KR1020077014786 A KR 1020077014786A KR 20077014786 A KR20077014786 A KR 20077014786A KR 100910681 B1 KR100910681 B1 KR 100910681B1
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KR
South Korea
Prior art keywords
gas
etching
flow rate
plasma
base layer
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Expired - Fee Related
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KR1020077014786A
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English (en)
Korean (ko)
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KR20070086761A (ko
Inventor
데쓰야 니시즈카
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도쿄엘렉트론가부시키가이샤
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Publication of KR20070086761A publication Critical patent/KR20070086761A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1020077014786A 2004-11-29 2005-11-18 에칭 방법 및 에칭 장치 Expired - Fee Related KR100910681B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00344608 2004-11-29
JP2004344608A JP4701691B2 (ja) 2004-11-29 2004-11-29 エッチング方法

Publications (2)

Publication Number Publication Date
KR20070086761A KR20070086761A (ko) 2007-08-27
KR100910681B1 true KR100910681B1 (ko) 2009-08-04

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Family Applications (1)

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Country Status (6)

Country Link
US (1) US7842617B2 (https=)
JP (1) JP4701691B2 (https=)
KR (1) KR100910681B1 (https=)
CN (1) CN100580887C (https=)
TW (1) TWI385721B (https=)
WO (1) WO2006057202A1 (https=)

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KR101418438B1 (ko) * 2007-07-10 2014-07-14 삼성전자주식회사 플라즈마 발생장치
WO2009084194A1 (en) * 2007-12-28 2009-07-09 Tokyo Electron Limited Etching method for metal film and metal oxide film, and manufacturing method for semiconductor device
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011174540A (ja) * 2010-02-24 2011-09-08 Tokyo Electron Ltd 真空排気用のボールバルブ及び真空排気装置
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
JP5845754B2 (ja) 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
JP5413342B2 (ja) * 2010-09-27 2014-02-12 株式会社Ｓｕｍｃｏ シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US8808562B2 (en) * 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9893276B2 (en) 2013-06-27 2018-02-13 Nec Corporation Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
KR102179230B1 (ko) * 2016-06-03 2020-11-16 엔테그리스, 아이엔씨. 하프니아 및 지르코니아의 기상 에칭
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6725176B2 (ja) * 2016-10-31 2020-07-15 株式会社日立ハイテク プラズマエッチング方法
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
WO2020247977A1 (en) 2019-06-04 2020-12-10 Lam Research Corporation Polymerization protective liner for reactive ion etch in patterning
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
CN113643973B (zh) * 2020-04-27 2024-11-08 中微半导体设备(上海)股份有限公司 一种低温刻蚀的方法及装置
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
WO2023283144A1 (en) 2021-07-09 2023-01-12 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films

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JPH10116824A (ja) 1996-06-17 1998-05-06 Applied Materials Inc 高いポリシリコン選択性を有するメタルシリサイドエッチング方法
KR20000071381A (ko) * 1999-02-25 2000-11-25 이데이 노부유끼 드라이 에칭 방법 및 반도체 장치의 제조 방법
KR20030004429A (ko) * 2001-03-28 2003-01-14 동경 엘렉트론 주식회사 플라즈마 처리 장치, 플라즈마 처리 방법 및 지파판

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Patent Citations (3)

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JPH10116824A (ja) 1996-06-17 1998-05-06 Applied Materials Inc 高いポリシリコン選択性を有するメタルシリサイドエッチング方法
KR20000071381A (ko) * 1999-02-25 2000-11-25 이데이 노부유끼 드라이 에칭 방법 및 반도체 장치의 제조 방법
KR20030004429A (ko) * 2001-03-28 2003-01-14 동경 엘렉트론 주식회사 플라즈마 처리 장치, 플라즈마 처리 방법 및 지파판

Also Published As

Publication number Publication date
JP4701691B2 (ja) 2011-06-15
US20080138996A1 (en) 2008-06-12
KR20070086761A (ko) 2007-08-27
JP2006156675A (ja) 2006-06-15
CN100580887C (zh) 2010-01-13
CN101069272A (zh) 2007-11-07
TW200636851A (en) 2006-10-16
US7842617B2 (en) 2010-11-30
TWI385721B (zh) 2013-02-11
WO2006057202A1 (ja) 2006-06-01

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