TWI385721B - Etching method and etching device - Google Patents

Etching method and etching device Download PDF

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Publication number
TWI385721B
TWI385721B TW094141915A TW94141915A TWI385721B TW I385721 B TWI385721 B TW I385721B TW 094141915 A TW094141915 A TW 094141915A TW 94141915 A TW94141915 A TW 94141915A TW I385721 B TWI385721 B TW I385721B
Authority
TW
Taiwan
Prior art keywords
gas
etching
plasma
processing container
chlorine
Prior art date
Application number
TW094141915A
Other languages
English (en)
Chinese (zh)
Other versions
TW200636851A (en
Inventor
西塚哲也
Original Assignee
東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京威力科創股份有限公司 filed Critical 東京威力科創股份有限公司
Publication of TW200636851A publication Critical patent/TW200636851A/zh
Application granted granted Critical
Publication of TWI385721B publication Critical patent/TWI385721B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
TW094141915A 2004-11-29 2005-11-29 Etching method and etching device TWI385721B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004344608A JP4701691B2 (ja) 2004-11-29 2004-11-29 エッチング方法

Publications (2)

Publication Number Publication Date
TW200636851A TW200636851A (en) 2006-10-16
TWI385721B true TWI385721B (zh) 2013-02-11

Family

ID=36497939

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141915A TWI385721B (zh) 2004-11-29 2005-11-29 Etching method and etching device

Country Status (6)

Country Link
US (1) US7842617B2 (https=)
JP (1) JP4701691B2 (https=)
KR (1) KR100910681B1 (https=)
CN (1) CN100580887C (https=)
TW (1) TWI385721B (https=)
WO (1) WO2006057202A1 (https=)

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US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
JP5845754B2 (ja) 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
JP5413342B2 (ja) * 2010-09-27 2014-02-12 株式会社Ｓｕｍｃｏ シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US8808562B2 (en) * 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9893276B2 (en) 2013-06-27 2018-02-13 Nec Corporation Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
KR102179230B1 (ko) * 2016-06-03 2020-11-16 엔테그리스, 아이엔씨. 하프니아 및 지르코니아의 기상 에칭
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6725176B2 (ja) * 2016-10-31 2020-07-15 株式会社日立ハイテク プラズマエッチング方法
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
WO2020247977A1 (en) 2019-06-04 2020-12-10 Lam Research Corporation Polymerization protective liner for reactive ion etch in patterning
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
CN113643973B (zh) * 2020-04-27 2024-11-08 中微半导体设备(上海)股份有限公司 一种低温刻蚀的方法及装置
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
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CN1460288A (zh) * 2001-03-28 2003-12-03 大见忠弘 等离子体处理装置、等离子体处理方法和滞波板

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CN1460288A (zh) * 2001-03-28 2003-12-03 大见忠弘 等离子体处理装置、等离子体处理方法和滞波板

Also Published As

Publication number Publication date
JP4701691B2 (ja) 2011-06-15
US20080138996A1 (en) 2008-06-12
KR20070086761A (ko) 2007-08-27
JP2006156675A (ja) 2006-06-15
CN100580887C (zh) 2010-01-13
CN101069272A (zh) 2007-11-07
TW200636851A (en) 2006-10-16
US7842617B2 (en) 2010-11-30
KR100910681B1 (ko) 2009-08-04
WO2006057202A1 (ja) 2006-06-01

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