CN100580887C - 蚀刻方法 - Google Patents

蚀刻方法 Download PDF

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Publication number
CN100580887C
CN100580887C CN200580040949A CN200580040949A CN100580887C CN 100580887 C CN100580887 C CN 100580887C CN 200580040949 A CN200580040949 A CN 200580040949A CN 200580040949 A CN200580040949 A CN 200580040949A CN 100580887 C CN100580887 C CN 100580887C
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CN
China
Prior art keywords
gas
etching
containing gas
etched
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200580040949A
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English (en)
Chinese (zh)
Other versions
CN101069272A (zh
Inventor
西塚哲也
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101069272A publication Critical patent/CN101069272A/zh
Application granted granted Critical
Publication of CN100580887C publication Critical patent/CN100580887C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CN200580040949A 2004-11-29 2005-11-18 蚀刻方法 Expired - Fee Related CN100580887C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP344608/2004 2004-11-29
JP2004344608A JP4701691B2 (ja) 2004-11-29 2004-11-29 エッチング方法

Publications (2)

Publication Number Publication Date
CN101069272A CN101069272A (zh) 2007-11-07
CN100580887C true CN100580887C (zh) 2010-01-13

Family

ID=36497939

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200580040949A Expired - Fee Related CN100580887C (zh) 2004-11-29 2005-11-18 蚀刻方法

Country Status (6)

Country Link
US (1) US7842617B2 (https=)
JP (1) JP4701691B2 (https=)
KR (1) KR100910681B1 (https=)
CN (1) CN100580887C (https=)
TW (1) TWI385721B (https=)
WO (1) WO2006057202A1 (https=)

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JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
US20110061810A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011174540A (ja) * 2010-02-24 2011-09-08 Tokyo Electron Ltd 真空排気用のボールバルブ及び真空排気装置
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9287113B2 (en) 2012-11-08 2016-03-15 Novellus Systems, Inc. Methods for depositing films on sensitive substrates
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
WO2012002232A1 (ja) * 2010-06-28 2012-01-05 東京エレクトロン株式会社 プラズマ処理装置及び方法
JP5845754B2 (ja) 2010-09-15 2016-01-20 東京エレクトロン株式会社 プラズマエッチング処理方法
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
JP5413342B2 (ja) * 2010-09-27 2014-02-12 株式会社Ｓｕｍｃｏ シリコンウェーハ表層部のエッチング方法およびシリコンウェーハの金属汚染分析方法
JP5916044B2 (ja) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9245717B2 (en) 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5377587B2 (ja) * 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US8808562B2 (en) * 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9893276B2 (en) 2013-06-27 2018-02-13 Nec Corporation Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
US9633867B2 (en) * 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
KR102179230B1 (ko) * 2016-06-03 2020-11-16 엔테그리스, 아이엔씨. 하프니아 및 지르코니아의 기상 에칭
US9773643B1 (en) 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10629435B2 (en) 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10074543B2 (en) 2016-08-31 2018-09-11 Lam Research Corporation High dry etch rate materials for semiconductor patterning applications
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6725176B2 (ja) * 2016-10-31 2020-07-15 株式会社日立ハイテク プラズマエッチング方法
US10832908B2 (en) 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10454029B2 (en) 2016-11-11 2019-10-22 Lam Research Corporation Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11404275B2 (en) 2018-03-02 2022-08-02 Lam Research Corporation Selective deposition using hydrolysis
KR20240160679A (ko) 2019-05-01 2024-11-11 램 리써치 코포레이션 변조된 원자 층 증착
WO2020247977A1 (en) 2019-06-04 2020-12-10 Lam Research Corporation Polymerization protective liner for reactive ion etch in patterning
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
CN113643973B (zh) * 2020-04-27 2024-11-08 中微半导体设备(上海)股份有限公司 一种低温刻蚀的方法及装置
CN115803474A (zh) 2020-07-23 2023-03-14 朗姆研究公司 具有受控膜性质和高沉积速率的保形热cvd
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
WO2023283144A1 (en) 2021-07-09 2023-01-12 Lam Research Corporation Plasma enhanced atomic layer deposition of silicon-containing films

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880033A (en) * 1996-06-17 1999-03-09 Applied Materials, Inc. Method for etching metal silicide with high selectivity to polysilicon
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2004119781A (ja) * 2002-09-27 2004-04-15 Sharp Corp ドライエッチング方法
US6723652B1 (en) * 1999-02-25 2004-04-20 Sony Corporation Dry etching method and method of manufacturing semiconductor apparatus
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法

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JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS6265331A (ja) * 1985-09-17 1987-03-24 Hitachi Ltd 銅もしくは銅合金のエツチング方法
JPH11135481A (ja) 1997-10-28 1999-05-21 Yamaha Corp エッチング方法
US6217704B1 (en) * 1998-09-22 2001-04-17 Canon Kabushiki Kaisha Plasma processing apparatus
JP2002025986A (ja) * 2000-07-06 2002-01-25 Matsushita Electric Ind Co Ltd ドライエッチング方法
JP4717295B2 (ja) * 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
JP4147017B2 (ja) * 2001-10-19 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880033A (en) * 1996-06-17 1999-03-09 Applied Materials, Inc. Method for etching metal silicide with high selectivity to polysilicon
US6723652B1 (en) * 1999-02-25 2004-04-20 Sony Corporation Dry etching method and method of manufacturing semiconductor apparatus
JP2002355550A (ja) * 2001-03-28 2002-12-10 Tadahiro Omi プラズマ処理装置、プラズマ処理方法及び遅波板
JP2004119781A (ja) * 2002-09-27 2004-04-15 Sharp Corp ドライエッチング方法
JP2004273532A (ja) * 2003-03-05 2004-09-30 Hitachi High-Technologies Corp プラズマエッチング方法

Also Published As

Publication number Publication date
JP4701691B2 (ja) 2011-06-15
US20080138996A1 (en) 2008-06-12
KR20070086761A (ko) 2007-08-27
JP2006156675A (ja) 2006-06-15
CN101069272A (zh) 2007-11-07
TW200636851A (en) 2006-10-16
US7842617B2 (en) 2010-11-30
TWI385721B (zh) 2013-02-11
KR100910681B1 (ko) 2009-08-04
WO2006057202A1 (ja) 2006-06-01

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C06 Publication
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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100113

Termination date: 20161118