JP5934523B2 - 半導体装置の製造方法及びコンピュータ記録媒体 - Google Patents
半導体装置の製造方法及びコンピュータ記録媒体 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000007789 gas Substances 0.000 claims description 71
- 229920002120 photoresistant polymer Polymers 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 46
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 238000009966 trimming Methods 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 18
- 238000001020 plasma etching Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- 230000004048 modification Effects 0.000 claims description 14
- 238000012986 modification Methods 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 239000011247 coating layer Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
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- H01L21/3105—After-treatment
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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Description
図1は、実施形態に係る半導体装置の製造方法に用いるプラズマ処理装置の構成を示すものである。まず、プラズマ処理装置の構成について説明する。
(二酸化シリコン膜のエッチング)
処理ガス:C4F6/Ar/O2=15/750/35sccm
圧力:3.33Pa(25mTorr)
高周波電力(高い周波数の高周波/低い周波数の高周波):300W/300W
直流電圧:−150V
(フォトレジスト膜の改質)
処理ガス:H2/Ar=100/800sccm
圧力:6.65Pa(50mTorr)
高周波電力(高い周波数の高周波/低い周波数の高周波):300W/0W
直流電圧:−900V
(フォトレジスト膜のトリミング)
処理ガス:O2=1496sccm
圧力:106.4Pa(800mTorr)
高周波電力(高い周波数の高周波/低い周波数の高周波):2400W/0W
(窒化シリコン膜のエッチング)
処理ガス:CH2F2/Ar/O2=70/420/35sccm
圧力:6.65Pa(50mTorr)
高周波電力(高い周波数の高周波/低い周波数の高周波):400W/400W
直流電圧:−300V
(堆積物除去処理)
処理ガス:O2/CF4=150/350sccm
圧力:26.6Pa(200mTorr)
高周波電力(高い周波数の高周波/低い周波数の高周波):1500W/0W
Claims (6)
- 第1の誘電率を有する第1の膜と、前記第1の誘電率とは異なる第2の誘電率を有する第2の膜とが交互に積層された多層膜と、前記多層膜の上層に位置しエッチングマスクとして機能するフォトレジスト層とを有する基板をエッチングして、階段状の構造を形成する半導体装置の製造方法であって、
前記フォトレジスト層をマスクとして前記第1の膜をプラズマエッチングする第1工程と、
少なくともシリコン製部材を含む上部電極と、前記上部電極と対向して配設され、前記基板が載置される下部電極とを具備したプラズマ処理装置を使用し、前記上部電極に負の直流電圧を印加した状態で、アルゴンガスと水素ガスとを含む処理ガスを前記下部電極に印加する高周波電力によってプラズマ化し、当該プラズマに前記基板上に形成されたフォトレジスト層を晒して改質する第2工程と、
前記第2工程の後、前記フォトレジスト層をトリミングする第3工程と、
前記第3工程によってトリミングした前記フォトレジスト層及び前記第1工程でプラズマエッチングした前記第1の膜をエッチングマスクとして前記第2の膜をプラズマエッチングする第4工程とを有し、
前記第1工程乃至前記第4工程を繰り返して行うことにより、前記多層膜を階段状の構造し、
かつ、前記第1工程と、前記第2工程との間に、前記フォトレジスト層に付着した堆積物を除去する堆積物除去工程を具備する
ことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法であって、
前記第2工程では、前記上部電極に−900V以上の負の直流電圧を印加する
ことを特徴とする半導体装置の製造方法。 - 請求項1又は2記載の半導体装置の製造方法であって、
前記第1の膜と前記第2の膜は、
二酸化シリコン膜とドープドポリシリコン膜、
二酸化シリコン膜と窒化シリコン膜、
ポリシリコン膜とドープドポリシリコン膜
のいずれかであることを特徴とする半導体装置の製造方法。 - 請求項1〜3いずれか1項記載の半導体装置の製造方法であって、
前記第1の膜と、前記第2の膜は、合計64層以上積層されている
ことを特徴とする半導体装置の製造方法。 - 基板上に形成されたフォトレジスト層をマスクとして当該フォトレジスト層の下層に形成された膜をプラズマエッチングする半導体装置の製造方法であって、
少なくともシリコン製部材を含む上部電極と、前記上部電極と対向して配設され基板が載置される下部電極とを具備したプラズマ処理装置を使用し、前記上部電極に負の直流電圧を印加した状態で、アルゴンガスと水素ガスとを含む処理ガスを前記下部電極に印加する高周波電力によってプラズマ化し、当該プラズマに前記フォトレジスト層を晒すフォトレジストの改質工程と、
前記フォトレジストの改質工程の後、前記フォトレジスト層を、トリミングするトリミング工程とを具備し、
前記トリミング工程における前記フォトレジスト層の高さ方向のトリミング量yと水平方向のトリミング量xとの比(y/x)が0.7以下であり、かつ、
前記フォトレジスト層をマスクとして前記フォトレジスト層の下層に形成された膜をプラズマエッチングした際に前記フォトレジスト層に堆積した堆積物を除去する堆積物除去工程を具備する
ことを特徴とする半導体装置の製造方法。 - 被処理基板を収容する処理チャンバーと、
前記処理チャンバー内に処理ガスを供給する処理ガス供給機構と、
前記処理ガスのプラズマを発生させるプラズマ発生機構と
を具備したプラズマ処理装置を制御する制御プログラムが記録されたコンピュータ記録媒体であって、
前記制御プログラムは、請求項1〜5いずれか1項記載の半導体装置の製造方法が実行されるように前記プラズマ処理装置を制御する
ことを特徴とするコンピュータ記録媒体。
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US14/375,182 US9355861B2 (en) | 2012-03-02 | 2013-02-26 | Semiconductor device manufacturing method and computer-readable storage medium |
KR1020147021558A KR102071732B1 (ko) | 2012-03-02 | 2013-02-26 | 반도체 장치의 제조 방법 및 컴퓨터 기록 매체 |
PCT/JP2013/001133 WO2013128900A1 (ja) | 2012-03-02 | 2013-02-26 | 半導体装置の製造方法及びコンピュータ記録媒体 |
TW102107189A TWI612577B (zh) | 2012-03-02 | 2013-03-01 | 半導體裝置之製造方法及電腦記錄媒體 |
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CA2643510C (en) | 2006-02-27 | 2014-04-29 | Microcontinuum, Inc. | Formation of pattern replicating tools |
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US9589797B2 (en) * | 2013-05-17 | 2017-03-07 | Microcontinuum, Inc. | Tools and methods for producing nanoantenna electronic devices |
JP6422262B2 (ja) * | 2013-10-24 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
JP6243722B2 (ja) * | 2013-12-10 | 2017-12-06 | 東京エレクトロン株式会社 | エッチング処理方法 |
US9305839B2 (en) * | 2013-12-19 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Curing photo resist for improving etching selectivity |
US9704878B2 (en) | 2015-10-08 | 2017-07-11 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and methods of forming same |
JP2019121750A (ja) * | 2018-01-11 | 2019-07-22 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
JP7426840B2 (ja) | 2020-01-28 | 2024-02-02 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
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