KR100894260B1 - 포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법 - Google Patents

포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법 Download PDF

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Publication number
KR100894260B1
KR100894260B1 KR1020020003821A KR20020003821A KR100894260B1 KR 100894260 B1 KR100894260 B1 KR 100894260B1 KR 1020020003821 A KR1020020003821 A KR 1020020003821A KR 20020003821 A KR20020003821 A KR 20020003821A KR 100894260 B1 KR100894260 B1 KR 100894260B1
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South Korea
Prior art keywords
group
resin
acid
substituted
positive photoresist
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Expired - Fee Related
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KR1020020003821A
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English (en)
Korean (ko)
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KR20020062828A (ko
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후지모리토루
탄시로
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020020003821A 2001-01-25 2002-01-23 포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법 Expired - Fee Related KR100894260B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00017237 2001-01-25
JP2001017237A JP4177966B2 (ja) 2001-01-25 2001-01-25 ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
KR20020062828A KR20020062828A (ko) 2002-07-31
KR100894260B1 true KR100894260B1 (ko) 2009-04-21

Family

ID=18883473

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KR1020020003821A Expired - Fee Related KR100894260B1 (ko) 2001-01-25 2002-01-23 포지티브 포토레지스트 조성물 및 이 조성물을 이용한 패턴형성방법

Country Status (3)

Country Link
JP (1) JP4177966B2 (https=)
KR (1) KR100894260B1 (https=)
TW (1) TW575789B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100620437B1 (ko) 2005-01-17 2006-09-11 삼성전자주식회사 감광성 폴리머, 이를 포함하는 포토레지스트 조성물 및이를 이용한 포토레지스트 패턴 형성 방법
KR101841000B1 (ko) 2010-07-28 2018-03-22 스미또모 가가꾸 가부시키가이샤 포토레지스트 조성물
JP5898521B2 (ja) * 2011-02-25 2016-04-06 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6005964B2 (ja) * 2011-04-07 2016-10-12 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP6022788B2 (ja) * 2011-04-07 2016-11-09 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5852490B2 (ja) * 2011-04-07 2016-02-03 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5934536B2 (ja) * 2011-04-07 2016-06-15 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
KR102857261B1 (ko) * 2020-07-29 2025-09-09 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0934112A (ja) * 1995-05-12 1997-02-07 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH10282669A (ja) * 1996-03-11 1998-10-23 Fuji Photo Film Co Ltd ポジ型感光性組成物
KR19980086901A (ko) * 1997-05-09 1998-12-05 무네유키 마사유키 포지티브 감광성 조성물
KR19990013892A (ko) * 1997-07-15 1999-02-25 무네유키 마사유키 포지티브 포토레지스트 조성물 및 그것을 사용한 패턴형성 방법
KR19990045563A (ko) * 1997-11-26 1999-06-25 무네유키 가코우 포지티브 포토레지스트 조성물
KR100253017B1 (ko) * 1995-12-21 2000-06-01 다나까 모또아끼 중합체 조성물 및 레지스트 재료
JP2000181066A (ja) * 1998-12-18 2000-06-30 Jsr Corp 感放射線性樹脂組成物
JP2000231193A (ja) * 1999-02-09 2000-08-22 Jsr Corp 感放射線性樹脂組成物
JP2000241980A (ja) * 1998-12-22 2000-09-08 Jsr Corp 感放射線性樹脂組成物
JP2000327654A (ja) * 1999-05-14 2000-11-28 Jsr Corp スルホン酸オニウム塩化合物および感放射線性樹脂組成物
KR20000076727A (ko) * 1999-02-24 2000-12-26 무네유키 가코우 포지티브 포토레지스트 조성물

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0934112A (ja) * 1995-05-12 1997-02-07 Sumitomo Chem Co Ltd フォトレジスト組成物
KR100253017B1 (ko) * 1995-12-21 2000-06-01 다나까 모또아끼 중합체 조성물 및 레지스트 재료
JPH10282669A (ja) * 1996-03-11 1998-10-23 Fuji Photo Film Co Ltd ポジ型感光性組成物
KR19980086901A (ko) * 1997-05-09 1998-12-05 무네유키 마사유키 포지티브 감광성 조성물
KR19990013892A (ko) * 1997-07-15 1999-02-25 무네유키 마사유키 포지티브 포토레지스트 조성물 및 그것을 사용한 패턴형성 방법
KR19990045563A (ko) * 1997-11-26 1999-06-25 무네유키 가코우 포지티브 포토레지스트 조성물
JP2000181066A (ja) * 1998-12-18 2000-06-30 Jsr Corp 感放射線性樹脂組成物
JP2000241980A (ja) * 1998-12-22 2000-09-08 Jsr Corp 感放射線性樹脂組成物
JP2000231193A (ja) * 1999-02-09 2000-08-22 Jsr Corp 感放射線性樹脂組成物
KR20000076727A (ko) * 1999-02-24 2000-12-26 무네유키 가코우 포지티브 포토레지스트 조성물
JP2000327654A (ja) * 1999-05-14 2000-11-28 Jsr Corp スルホン酸オニウム塩化合物および感放射線性樹脂組成物

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KR20020062828A (ko) 2002-07-31
JP2002221795A (ja) 2002-08-09
JP4177966B2 (ja) 2008-11-05
TW575789B (en) 2004-02-11

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