KR100875361B1 - 패턴 묘화 장치 및 패턴 묘화 방법 - Google Patents

패턴 묘화 장치 및 패턴 묘화 방법 Download PDF

Info

Publication number
KR100875361B1
KR100875361B1 KR1020070086135A KR20070086135A KR100875361B1 KR 100875361 B1 KR100875361 B1 KR 100875361B1 KR 1020070086135 A KR1020070086135 A KR 1020070086135A KR 20070086135 A KR20070086135 A KR 20070086135A KR 100875361 B1 KR100875361 B1 KR 100875361B1
Authority
KR
South Korea
Prior art keywords
scan
exposure
substrate
pattern
sub
Prior art date
Application number
KR1020070086135A
Other languages
English (en)
Korean (ko)
Other versions
KR20080045604A (ko
Inventor
히데키 하야시
마사오 이노우에
Original Assignee
다이니폰 스크린 세이조우 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이니폰 스크린 세이조우 가부시키가이샤 filed Critical 다이니폰 스크린 세이조우 가부시키가이샤
Publication of KR20080045604A publication Critical patent/KR20080045604A/ko
Application granted granted Critical
Publication of KR100875361B1 publication Critical patent/KR100875361B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070086135A 2006-11-20 2007-08-27 패턴 묘화 장치 및 패턴 묘화 방법 KR100875361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006312878A JP2008129248A (ja) 2006-11-20 2006-11-20 パターン描画装置及びパターン描画方法
JPJP-P-2006-00312878 2006-11-20

Publications (2)

Publication Number Publication Date
KR20080045604A KR20080045604A (ko) 2008-05-23
KR100875361B1 true KR100875361B1 (ko) 2008-12-22

Family

ID=39480223

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070086135A KR100875361B1 (ko) 2006-11-20 2007-08-27 패턴 묘화 장치 및 패턴 묘화 방법

Country Status (4)

Country Link
JP (1) JP2008129248A (zh)
KR (1) KR100875361B1 (zh)
CN (1) CN101187781A (zh)
TW (1) TW200825630A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5253037B2 (ja) * 2008-08-18 2013-07-31 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5567397B2 (ja) * 2010-05-31 2014-08-06 株式会社エスケーエレクトロニクス フォトマスクの製造方法、フォトマスクおよびフォトマスクの製造装置
JP2014066954A (ja) * 2012-09-27 2014-04-17 Dainippon Screen Mfg Co Ltd 描画装置、および、描画方法
JP6117593B2 (ja) * 2013-03-29 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
US10983444B2 (en) * 2018-04-26 2021-04-20 Applied Materials, Inc. Systems and methods of using solid state emitter arrays
KR20190108532A (ko) 2019-09-04 2019-09-24 엘지전자 주식회사 세탁기/건조기 내의 이물질 감지 방법, 장치 및 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332221A (ja) 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004333942A (ja) 2003-05-08 2004-11-25 Hoya Corp パターン描画方法及びフォトマスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332221A (ja) 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004333942A (ja) 2003-05-08 2004-11-25 Hoya Corp パターン描画方法及びフォトマスクの製造方法

Also Published As

Publication number Publication date
TW200825630A (en) 2008-06-16
KR20080045604A (ko) 2008-05-23
CN101187781A (zh) 2008-05-28
JP2008129248A (ja) 2008-06-05

Similar Documents

Publication Publication Date Title
KR100875361B1 (ko) 패턴 묘화 장치 및 패턴 묘화 방법
JP2009204982A (ja) パターン描画装置及びパターン描画方法
JP5757245B2 (ja) 露光方法および露光装置
TWI542955B (zh) 描繪裝置及描繪方法
KR101506388B1 (ko) 묘화 장치, 및, 묘화 방법
KR100816494B1 (ko) 마스크리스 노광기 및 이를 이용한 표시장치용 기판의 제조방법
KR20080035452A (ko) 패턴 묘화 장치, 패턴 묘화 시스템 및 패턴 묘화 방법
JP5722136B2 (ja) パターン描画装置およびパターン描画方法
JP5219982B2 (ja) 露光装置、露光方法、及び表示用パネル基板の製造方法
US7495745B2 (en) Patterning method and computer readable medium therefor
JP4215433B2 (ja) レーザビームによる識別コードのマーキング方法及び装置
KR102269979B1 (ko) 묘화 장치, 및 묘화 방법
TWI645255B (zh) 描繪方法
KR102592916B1 (ko) 마스크리스 노광 장치와 노광 방법, 및 그 노광 방법을 포함한 반도체 소자 제조방법
JP2005221596A (ja) パターン描画装置
KR20080041105A (ko) 패턴 묘화 장치 및 패턴 묘화 방법
JP2010122619A (ja) パターン描画装置、パターン描画方法及びパターン描画用のマスク
KR101917014B1 (ko) 직접 묘화 장치용의 gui 장치, 직접 묘화 시스템, 묘화 영역 설정 방법 및 프로그램
JP2006145745A (ja) パターン描画装置およびパターン描画方法
JP6380728B2 (ja) 投影走査露光方法及びデバイス製造方法
JP4211310B2 (ja) マルチビームレーザー描画方法およびフォトマスク製造方法
JP2024032060A (ja) 露光装置および露光方法
KR101883186B1 (ko) 블라인드를 포함하는 노광 장치 및 이의 구동 방법
JP2020160401A (ja) 露光装置の検査方法及び露光装置
KR101002156B1 (ko) 패턴 묘화 장치 및 패턴 묘화 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee