KR100875361B1 - 패턴 묘화 장치 및 패턴 묘화 방법 - Google Patents

패턴 묘화 장치 및 패턴 묘화 방법 Download PDF

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Publication number
KR100875361B1
KR100875361B1 KR1020070086135A KR20070086135A KR100875361B1 KR 100875361 B1 KR100875361 B1 KR 100875361B1 KR 1020070086135 A KR1020070086135 A KR 1020070086135A KR 20070086135 A KR20070086135 A KR 20070086135A KR 100875361 B1 KR100875361 B1 KR 100875361B1
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KR
South Korea
Prior art keywords
scan
exposure
substrate
pattern
sub
Prior art date
Application number
KR1020070086135A
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English (en)
Korean (ko)
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KR20080045604A (ko
Inventor
히데키 하야시
마사오 이노우에
Original Assignee
다이니폰 스크린 세이조우 가부시키가이샤
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Application filed by 다이니폰 스크린 세이조우 가부시키가이샤 filed Critical 다이니폰 스크린 세이조우 가부시키가이샤
Publication of KR20080045604A publication Critical patent/KR20080045604A/ko
Application granted granted Critical
Publication of KR100875361B1 publication Critical patent/KR100875361B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020070086135A 2006-11-20 2007-08-27 패턴 묘화 장치 및 패턴 묘화 방법 KR100875361B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00312878 2006-11-20
JP2006312878A JP2008129248A (ja) 2006-11-20 2006-11-20 パターン描画装置及びパターン描画方法

Publications (2)

Publication Number Publication Date
KR20080045604A KR20080045604A (ko) 2008-05-23
KR100875361B1 true KR100875361B1 (ko) 2008-12-22

Family

ID=39480223

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070086135A KR100875361B1 (ko) 2006-11-20 2007-08-27 패턴 묘화 장치 및 패턴 묘화 방법

Country Status (4)

Country Link
JP (1) JP2008129248A (zh)
KR (1) KR100875361B1 (zh)
CN (1) CN101187781A (zh)
TW (1) TW200825630A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5253037B2 (ja) * 2008-08-18 2013-07-31 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP5567397B2 (ja) * 2010-05-31 2014-08-06 株式会社エスケーエレクトロニクス フォトマスクの製造方法、フォトマスクおよびフォトマスクの製造装置
JP2014066954A (ja) 2012-09-27 2014-04-17 Dainippon Screen Mfg Co Ltd 描画装置、および、描画方法
JP6117593B2 (ja) * 2013-03-29 2017-04-19 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
US10983444B2 (en) * 2018-04-26 2021-04-20 Applied Materials, Inc. Systems and methods of using solid state emitter arrays
KR20190108532A (ko) 2019-09-04 2019-09-24 엘지전자 주식회사 세탁기/건조기 내의 이물질 감지 방법, 장치 및 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332221A (ja) 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004333942A (ja) 2003-05-08 2004-11-25 Hoya Corp パターン描画方法及びフォトマスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332221A (ja) 2002-05-16 2003-11-21 Dainippon Screen Mfg Co Ltd 露光装置
JP2004333942A (ja) 2003-05-08 2004-11-25 Hoya Corp パターン描画方法及びフォトマスクの製造方法

Also Published As

Publication number Publication date
CN101187781A (zh) 2008-05-28
TW200825630A (en) 2008-06-16
KR20080045604A (ko) 2008-05-23
JP2008129248A (ja) 2008-06-05

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