KR100831180B1 - 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물 - Google Patents

포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물 Download PDF

Info

Publication number
KR100831180B1
KR100831180B1 KR1020027016692A KR20027016692A KR100831180B1 KR 100831180 B1 KR100831180 B1 KR 100831180B1 KR 1020027016692 A KR1020027016692 A KR 1020027016692A KR 20027016692 A KR20027016692 A KR 20027016692A KR 100831180 B1 KR100831180 B1 KR 100831180B1
Authority
KR
South Korea
Prior art keywords
solution
cleaning
ascorbic acid
weight percent
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020027016692A
Other languages
English (en)
Korean (ko)
Other versions
KR20030025238A (ko
Inventor
나그시네샤리아르
바네스제프
쉬딩잉
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20030025238A publication Critical patent/KR20030025238A/ko
Application granted granted Critical
Publication of KR100831180B1 publication Critical patent/KR100831180B1/ko
Assigned to 인티그리스, 인코포레이티드 reassignment 인티그리스, 인코포레이티드 권리의 전부이전등록 Assignors: 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3254—Esters or carbonates thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
KR1020027016692A 2000-06-06 2001-06-06 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물 Expired - Lifetime KR100831180B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/587,883 US6492308B1 (en) 1999-11-16 2000-06-06 Post chemical-mechanical planarization (CMP) cleaning composition
US09/587,883 2000-06-06
PCT/US2001/018402 WO2001095381A2 (en) 2000-06-06 2001-06-06 Post chemical-mechanical planarization (cmp) cleaning composition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020077026381A Division KR100831182B1 (ko) 2000-06-06 2001-06-06 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물

Publications (2)

Publication Number Publication Date
KR20030025238A KR20030025238A (ko) 2003-03-28
KR100831180B1 true KR100831180B1 (ko) 2008-05-21

Family

ID=24351570

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020027016692A Expired - Lifetime KR100831180B1 (ko) 2000-06-06 2001-06-06 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물
KR1020077026381A Expired - Lifetime KR100831182B1 (ko) 2000-06-06 2001-06-06 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020077026381A Expired - Lifetime KR100831182B1 (ko) 2000-06-06 2001-06-06 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물

Country Status (9)

Country Link
US (1) US6492308B1 (https=)
EP (1) EP1287550B1 (https=)
JP (1) JP4942275B2 (https=)
KR (2) KR100831180B1 (https=)
CN (1) CN1205655C (https=)
AT (1) ATE462198T1 (https=)
DE (1) DE60141629D1 (https=)
TW (1) TW574369B (https=)
WO (1) WO2001095381A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8252686B2 (en) 2009-02-16 2012-08-28 Hynix Semiconductor Inc. Method for forming copper wiring in a semiconductor device
US12456633B2 (en) 2022-06-29 2025-10-28 Samsung Electronics Co., Ltd. Wafer cleaning equipment

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
KR20030007969A (ko) * 2000-06-16 2003-01-23 카오카부시키가이샤 세정제 조성물
US6627587B2 (en) * 2001-04-19 2003-09-30 Esc Inc. Cleaning compositions
US6653265B2 (en) * 2001-06-20 2003-11-25 Cornell Research Foundation, Inc. Removable marking system
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
US20030138737A1 (en) 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same
CN1639846A (zh) * 2002-01-28 2005-07-13 三菱化学株式会社 半导体器件用基板的清洗液及清洗方法
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7306663B2 (en) * 2003-08-05 2007-12-11 Halox, Division Of Hammond Group, Inc. Corrosion inhibitor
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
WO2005066325A2 (en) * 2003-12-31 2005-07-21 Ekc Technology, Inc. Cleaner compositions containing free radical quenchers
US20070251154A1 (en) * 2004-02-04 2007-11-01 Lombardi John L Lapping Composition and Method Using Same
KR100795364B1 (ko) * 2004-02-10 2008-01-17 삼성전자주식회사 반도체 기판용 세정액 조성물, 이를 이용한 세정 방법 및도전성 구조물의 제조 방법
US7498295B2 (en) 2004-02-12 2009-03-03 Air Liquide Electronics U.S. Lp Alkaline chemistry for post-CMP cleaning comprising tetra alkyl ammonium hydroxide
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7087564B2 (en) * 2004-03-05 2006-08-08 Air Liquide America, L.P. Acidic chemistry for post-CMP cleaning
US7253111B2 (en) 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
KR20050110470A (ko) * 2004-05-19 2005-11-23 테크노세미켐 주식회사 반도체 기판용 세정액 조성물, 이를 이용한 반도체 기판세정방법 및 반도체 장치 제조 방법
CN1300377C (zh) * 2004-11-25 2007-02-14 长沙艾森设备维护技术有限公司 飞机清洗剂
US20060148666A1 (en) * 2004-12-30 2006-07-06 Advanced Technology Materials Inc. Aqueous cleaner with low metal etch rate
US7427362B2 (en) 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US7922823B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
EP1871855B1 (en) 2005-03-25 2010-03-24 DuPont Air Products NanoMaterials L.L.C. Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
ITTN20050005A1 (it) * 2005-04-05 2006-10-06 Antonio Arcelli Procedimento chimico per la riduzione di vapori tossici ed irritanti causati da ammoniaca dall'utilizzo di creme coloranti o decoloranti i capelli.
KR101164959B1 (ko) * 2005-04-06 2012-07-12 주식회사 동진쎄미켐 반도체 소자용 포토레지스트를 제거하기 위한 박리액 조성물
CN100348709C (zh) * 2005-05-20 2007-11-14 长兴开发科技股份有限公司 用于半导体铜制程的水相清洗组合物
JP2008543060A (ja) * 2005-05-26 2008-11-27 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅不活性化化学機械研磨後洗浄組成物及び使用方法
EP2687589A3 (en) * 2005-05-26 2014-05-07 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
CN101233456B (zh) * 2005-06-07 2013-01-02 高级技术材料公司 金属和电介质相容的牺牲性抗反射涂层清洗及去除组合物
US20090212021A1 (en) * 2005-06-13 2009-08-27 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
TW200734448A (en) * 2006-02-03 2007-09-16 Advanced Tech Materials Low pH post-CMP residue removal composition and method of use
US7374621B2 (en) * 2006-02-09 2008-05-20 Hitachi Global Storage Technologies Netherlands Bv System and method for cleaning chemistry and processing during thin film magnetic head wafer fabrication
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US20070232511A1 (en) * 2006-03-28 2007-10-04 Matthew Fisher Cleaning solutions including preservative compounds for post CMP cleaning processes
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US8685909B2 (en) 2006-09-21 2014-04-01 Advanced Technology Materials, Inc. Antioxidants for post-CMP cleaning formulations
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR100792358B1 (ko) 2006-09-29 2008-01-09 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
US7851655B2 (en) * 2006-12-19 2010-12-14 Nalco Company Functionalized amine-based corrosion inhibitors for galvanized metal surfaces and method of using same
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
KR101561708B1 (ko) * 2007-05-17 2015-10-19 인티그리스, 인코포레이티드 Ｃｍｐ후 세정 제제용 신규한 항산화제
TWI437093B (zh) * 2007-08-03 2014-05-11 長興開發科技股份有限公司 半導體銅製程用水相清洗組合物
CN101226346B (zh) * 2007-12-27 2010-06-09 周伟 光致抗蚀剂的脱膜工艺及在该工艺中使用的第一组合物、第二组合物和脱膜剂水溶液
WO2010048139A2 (en) 2008-10-21 2010-04-29 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
KR101751553B1 (ko) 2009-06-30 2017-06-27 바스프 에스이 수성 알칼리 세정 조성물 및 그 사용 방법
ES2711924T3 (es) 2010-01-25 2019-05-08 Westinghouse Electric Co Llc Procedimiento y composición para eliminar depósitos de cal formados en una superficie metálica dentro de un sistema generador de vapor
SG182789A1 (en) 2010-01-29 2012-09-27 Advanced Tech Materials Cleaning agent for semiconductor provided with metal wiring
CN103003405B (zh) 2010-07-19 2016-04-13 巴斯夫欧洲公司 含水碱性清洁组合物及其应用方法
TWI465556B (zh) * 2010-09-14 2014-12-21 臺灣永光化學工業股份有限公司 用於粗拋晶圓之研磨組成物
CN103154321B (zh) 2010-10-06 2015-11-25 安格斯公司 选择性蚀刻金属氮化物的组合物及方法
WO2012097143A2 (en) 2011-01-13 2012-07-19 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium- containing solutions
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
SG11201404930SA (en) 2012-02-15 2014-09-26 Advanced Tech Materials Post-cmp removal using compositions and method of use
JP6123335B2 (ja) 2012-02-17 2017-05-10 三菱化学株式会社 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法
KR20140139565A (ko) * 2012-03-18 2014-12-05 인티그리스, 인코포레이티드 개선된 장벽층 상용성 및 세정 성능을 가진 cmp-후 배합물
JP2015517691A (ja) 2012-05-18 2015-06-22 インテグリス，インコーポレイテッド 窒化チタンを含む表面からフォトレジストを剥離するための組成物およびプロセス
WO2014017183A1 (ja) * 2012-07-24 2014-01-30 三井金属鉱業株式会社 電極箔及び有機発光デバイス
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
JP6751015B2 (ja) * 2013-03-15 2020-09-02 キャボット マイクロエレクトロニクス コーポレイション 銅の化学的機械的平坦化後のための水性清浄化組成物
US20140308814A1 (en) * 2013-04-15 2014-10-16 Applied Materials, Inc Chemical mechanical polishing methods and systems including pre-treatment phase and pre-treatment compositions
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR101420571B1 (ko) * 2013-07-05 2014-07-16 주식회사 동진쎄미켐 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
US9279067B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (zh) 2013-12-20 2019-06-11 Entegris, Inc. 移除離子植入抗蝕劑之非氧化強酸類之用途
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
CN106661518B (zh) * 2014-07-18 2020-01-14 嘉柏微电子材料股份公司 在cmp后使用的清洁组合物及其相关方法
KR102183400B1 (ko) * 2015-06-23 2020-11-26 주식회사 이엔에프테크놀로지 세정액 조성물
US10832917B2 (en) * 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
KR102230869B1 (ko) 2017-09-14 2021-03-23 주식회사 이엔에프테크놀로지 세정액 조성물
KR102242969B1 (ko) 2018-03-06 2021-04-22 주식회사 이엔에프테크놀로지 반도체 기판용 세정액 조성물
JP7276343B2 (ja) 2018-08-30 2023-05-18 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
JP7192461B2 (ja) * 2018-12-11 2022-12-20 三菱ケミカル株式会社 洗浄液、洗浄方法及び半導体ウェハの製造方法
CN117946812A (zh) * 2022-10-18 2024-04-30 安集微电子科技（上海）股份有限公司 一种清洗组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994008276A1 (en) * 1992-09-28 1994-04-14 Ducoa L.P. Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide
EP0690483A2 (en) 1994-06-23 1996-01-03 MALLINCKRODT BAKER, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317792A1 (de) * 1993-05-28 1994-12-01 Herberts Gmbh Emulgatorfreies Überzugsmittel, dessen Herstellung und Verwendung
JP3302120B2 (ja) 1993-07-08 2002-07-15 関東化学株式会社 レジスト用剥離液
US6326130B1 (en) * 1993-10-07 2001-12-04 Mallinckrodt Baker, Inc. Photoresist strippers containing reducing agents to reduce metal corrosion
TW274630B (https=) * 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5567574A (en) 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US6030932A (en) * 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5989353A (en) 1996-10-11 1999-11-23 Mallinckrodt Baker, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness
US6060439A (en) * 1997-09-29 2000-05-09 Kyzen Corporation Cleaning compositions and methods for cleaning resin and polymeric materials used in manufacture
US5997658A (en) * 1998-01-09 1999-12-07 Ashland Inc. Aqueous stripping and cleaning compositions
US6465403B1 (en) * 1998-05-18 2002-10-15 David C. Skee Silicate-containing alkaline compositions for cleaning microelectronic substrates
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
JP4138096B2 (ja) * 1998-09-09 2008-08-20 花王株式会社 剥離剤組成物
JP4224651B2 (ja) 1999-02-25 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離剤およびそれを用いた半導体素子の製造方法
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6475966B1 (en) 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994008276A1 (en) * 1992-09-28 1994-04-14 Ducoa L.P. Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide
EP0690483A2 (en) 1994-06-23 1996-01-03 MALLINCKRODT BAKER, Inc. Cleaning wafer substrates of metal contamination while maintaining wafer smoothness

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8252686B2 (en) 2009-02-16 2012-08-28 Hynix Semiconductor Inc. Method for forming copper wiring in a semiconductor device
US12456633B2 (en) 2022-06-29 2025-10-28 Samsung Electronics Co., Ltd. Wafer cleaning equipment

Also Published As

Publication number Publication date
WO2001095381A2 (en) 2001-12-13
EP1287550A2 (en) 2003-03-05
WO2001095381A3 (en) 2002-05-23
CN1433567A (zh) 2003-07-30
KR100831182B1 (ko) 2008-05-22
JP2003536258A (ja) 2003-12-02
TW574369B (en) 2004-02-01
JP4942275B2 (ja) 2012-05-30
CN1205655C (zh) 2005-06-08
DE60141629D1 (de) 2010-05-06
US6492308B1 (en) 2002-12-10
EP1287550B1 (en) 2010-03-24
ATE462198T1 (de) 2010-04-15
KR20070114326A (ko) 2007-11-30
KR20030025238A (ko) 2003-03-28

Similar Documents

Publication Publication Date Title
KR100831180B1 (ko) 포스트 화학적-기계적 플래너화 (ｃｍｐ) 세정 조성물
US6723691B2 (en) Post chemical-mechanical planarization (CMP) cleaning composition
US6194366B1 (en) Post chemical-mechanical planarization (CMP) cleaning composition
US7365045B2 (en) Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
KR100355212B1 (ko) 후세척처리방법
EP1888735B1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP1725647B1 (en) Improved acidic chemistry for post-cmp cleaning
EP1577934B1 (en) Alkaline post-chemical mechanical planarization cleaning compositions
KR100746056B1 (ko) 기판표면 세정액 및 세정방법
KR101997950B1 (ko) 반도체 디바이스용 세정액 및 반도체 디바이스용 기판의 세정 방법
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
EP2596091B1 (en) Aqueous alkaline cleaning compositions and methods of their use
US20060148666A1 (en) Aqueous cleaner with low metal etch rate
WO2003065433A1 (fr) Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage
KR20090119735A (ko) 반도체 기판 세정액 조성물
EP2687589A2 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

A107 Divisional application of patent
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130425

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140425

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150424

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20160425

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20170427

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20180425

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20190430

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20210607

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000