KR100816746B1 - 자기 메모리 셀 - Google Patents

자기 메모리 셀 Download PDF

Info

Publication number
KR100816746B1
KR100816746B1 KR1020020017756A KR20020017756A KR100816746B1 KR 100816746 B1 KR100816746 B1 KR 100816746B1 KR 1020020017756 A KR1020020017756 A KR 1020020017756A KR 20020017756 A KR20020017756 A KR 20020017756A KR 100816746 B1 KR100816746 B1 KR 100816746B1
Authority
KR
South Korea
Prior art keywords
ferromagnetic
layer
cladding
read
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020020017756A
Other languages
English (en)
Korean (ko)
Other versions
KR20030009094A (ko
Inventor
안토니토마스씨
샤르마매니쉬
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Publication of KR20030009094A publication Critical patent/KR20030009094A/ko
Application granted granted Critical
Publication of KR100816746B1 publication Critical patent/KR100816746B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
KR1020020017756A 2001-04-02 2002-04-01 자기 메모리 셀 Expired - Fee Related KR100816746B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/825,461 US6404674B1 (en) 2001-04-02 2001-04-02 Cladded read-write conductor for a pinned-on-the-fly soft reference layer
US09/825,461 2001-04-02

Publications (2)

Publication Number Publication Date
KR20030009094A KR20030009094A (ko) 2003-01-29
KR100816746B1 true KR100816746B1 (ko) 2008-03-26

Family

ID=25244051

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020017756A Expired - Fee Related KR100816746B1 (ko) 2001-04-02 2002-04-01 자기 메모리 셀

Country Status (6)

Country Link
US (1) US6404674B1 (enExample)
EP (1) EP1248265A3 (enExample)
JP (1) JP3942931B2 (enExample)
KR (1) KR100816746B1 (enExample)
CN (1) CN1329916C (enExample)
TW (1) TW541530B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001742B1 (ko) * 2003-10-24 2010-12-15 삼성전자주식회사 자기 램 및 그 제조방법

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
US6936903B2 (en) * 2001-09-25 2005-08-30 Hewlett-Packard Development Company, L.P. Magnetic memory cell having a soft reference layer
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6538917B1 (en) * 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US6549447B1 (en) * 2001-10-31 2003-04-15 Peter Fricke Memory cell structure
DE10158795B4 (de) * 2001-11-30 2005-12-22 Infineon Technologies Ag Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6552554B1 (en) * 2001-12-06 2003-04-22 The United States Of America As Represented By The Secretary Of The Navy Testing current perpendicular to plane giant magnetoresistance multilayer devices
US6750491B2 (en) * 2001-12-20 2004-06-15 Hewlett-Packard Development Company, L.P. Magnetic memory device having soft reference layer
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction
US6728132B2 (en) * 2002-04-03 2004-04-27 Micron Technology, Inc. Synthetic-ferrimagnet sense-layer for high density MRAM applications
US6780653B2 (en) * 2002-06-06 2004-08-24 Micron Technology, Inc. Methods of forming magnetoresistive memory device assemblies
US6707087B2 (en) 2002-06-21 2004-03-16 Hewlett-Packard Development Company, L.P. Structure of chalcogenide memory element
US6683815B1 (en) * 2002-06-26 2004-01-27 Silicon Magnetic Systems Magnetic memory cell and method for assigning tunable writing currents
US6744663B2 (en) * 2002-06-28 2004-06-01 Motorola, Inc. Circuit and method for reading a toggle memory cell
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
US6885576B2 (en) * 2002-08-13 2005-04-26 Micron Technology, Inc. Closed flux magnetic memory
US6924539B2 (en) * 2002-08-30 2005-08-02 Hewlett-Packard Development Company, L.P. Magnetic memory cell having an annular data layer and a soft reference layer
US6577529B1 (en) * 2002-09-03 2003-06-10 Hewlett-Packard Development Company, L.P. Multi-bit magnetic memory device
US6801451B2 (en) * 2002-09-03 2004-10-05 Hewlett-Packard Development Company, L.P. Magnetic memory devices having multiple bits per memory cell
JP3788964B2 (ja) * 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
JP4596230B2 (ja) * 2002-09-13 2010-12-08 Ｔｄｋ株式会社 磁気メモリデバイスおよびその製造方法
JP4404182B2 (ja) * 2002-09-25 2010-01-27 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
JP2004153181A (ja) * 2002-10-31 2004-05-27 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US6740947B1 (en) * 2002-11-13 2004-05-25 Hewlett-Packard Development Company, L.P. MRAM with asymmetric cladded conductor
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
KR20050084340A (ko) * 2002-12-18 2005-08-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 집적 회로 장치, 집적 회로 메모리 장치 및 안티-탬퍼 장치
JP4365591B2 (ja) * 2003-01-17 2009-11-18 Ｔｄｋ株式会社 磁気メモリデバイスおよび書込電流駆動回路、並びに書込電流駆動方法
JP4720067B2 (ja) * 2003-01-24 2011-07-13 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
US6982901B1 (en) * 2003-01-31 2006-01-03 Hewlett-Packard Development Company, L.P. Memory device and method of use
US7056749B2 (en) * 2003-03-03 2006-06-06 Hewlett-Packard Development Company, L.P. Simplified magnetic memory cell
JP4419408B2 (ja) * 2003-03-14 2010-02-24 Ｔｄｋ株式会社 磁気抵抗効果素子および磁気メモリデバイス
US20040184311A1 (en) * 2003-03-18 2004-09-23 Manish Sharma Magnetic sensor
US6950919B2 (en) * 2003-03-26 2005-09-27 Hewlett-Packard Development Company, L.P. Computer system with operating system to dynamically adjust the main memory
JP4729836B2 (ja) * 2003-03-28 2011-07-20 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
AU2003219639A1 (en) * 2003-04-16 2004-11-04 Agency For Science, Technology And Research Magnetic memory device
US6785160B1 (en) 2003-04-29 2004-08-31 Hewlett-Packard Development Company, L.P. Method of providing stability of a magnetic memory cell
US7020009B2 (en) * 2003-05-14 2006-03-28 Macronix International Co., Ltd. Bistable magnetic device using soft magnetic intermediary material
US6865107B2 (en) * 2003-06-23 2005-03-08 Hewlett-Packard Development Company, L.P. Magnetic memory device
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6906941B2 (en) * 2003-07-22 2005-06-14 Hewlett-Packard Development Company, L.P. Magnetic memory structure
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
US6925003B2 (en) * 2003-09-08 2005-08-02 Hewlett-Packard Development Company, L.P. Magnetic memory cell structure
US6990012B2 (en) * 2003-10-07 2006-01-24 Hewlett-Packard Development Company, L.P. Magnetic memory device
JP4868431B2 (ja) * 2003-10-10 2012-02-01 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイス
US6911685B2 (en) * 2003-10-10 2005-06-28 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
US7195927B2 (en) * 2003-10-22 2007-03-27 Hewlett-Packard Development Company, L.P. Process for making magnetic memory structures having different-sized memory cell layers
US6819586B1 (en) 2003-10-24 2004-11-16 Hewlett-Packard Development Company, L.P. Thermally-assisted magnetic memory structures
US7026673B2 (en) * 2003-12-11 2006-04-11 International Business Machines Corporation Low magnetization materials for high performance magnetic memory devices
US6956271B2 (en) * 2004-02-11 2005-10-18 Hewlett-Packard Development Company, L.P. Switching of soft reference layers of magnetic memory devices
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers
JP3977816B2 (ja) * 2004-03-16 2007-09-19 株式会社東芝 磁気ランダムアクセスメモリ及びその磁気ランダムアクセスメモリのデータ書き込み方法
US7102920B2 (en) * 2004-03-23 2006-09-05 Hewlett-Packard Development Company, L.P. Soft-reference three conductor magnetic memory storage device
US7102921B2 (en) * 2004-05-11 2006-09-05 Hewlett-Packard Development Company, L.P. Magnetic memory device
CN100495567C (zh) * 2004-10-28 2009-06-03 中国科学院物理研究所 外围电路平衡驱动的磁随机存取存储器
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
WO2007015358A1 (ja) 2005-08-02 2007-02-08 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
WO2007040189A1 (ja) * 2005-10-03 2007-04-12 Nec Corporation 磁気ランダムアクセスメモリ及びその動作方法
US7352613B2 (en) * 2005-10-21 2008-04-01 Macronix International Co., Ltd. Magnetic memory device and methods for making a magnetic memory device
US7457149B2 (en) 2006-05-05 2008-11-25 Macronix International Co., Ltd. Methods and apparatus for thermally assisted programming of a magnetic memory device
US7760542B2 (en) 2008-04-21 2010-07-20 Seagate Technology Llc Spin-torque memory with unidirectional write scheme
US8233319B2 (en) 2008-07-18 2012-07-31 Seagate Technology Llc Unipolar spin-transfer switching memory unit
US7933146B2 (en) 2008-10-08 2011-04-26 Seagate Technology Llc Electronic devices utilizing spin torque transfer to flip magnetic orientation
US7933137B2 (en) 2008-10-08 2011-04-26 Seagate Teachnology Llc Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures
US7940592B2 (en) 2008-12-02 2011-05-10 Seagate Technology Llc Spin-torque bit cell with unpinned reference layer and unidirectional write current
US8203870B2 (en) * 2010-11-23 2012-06-19 Seagate Technology Llc Flux programmed multi-bit magnetic memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154389A (ja) * 1997-09-18 1999-06-08 Canon Inc 磁気抵抗素子、磁性薄膜メモリ素子および該メモリ素子の記録再生方法
WO2000010172A2 (de) * 1998-08-12 2000-02-24 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
JP2000090658A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0875901B1 (en) * 1997-04-28 2006-08-09 Canon Kabushiki Kaisha Magnetic thin-film memory element utilizing GMR effect, and magnetic thin-film memory
US6111784A (en) * 1997-09-18 2000-08-29 Canon Kabushiki Kaisha Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element
US6196930B1 (en) 1997-11-12 2001-03-06 Randy T. Aumock Extension apparatus for golf club
US6169686B1 (en) 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US5982660A (en) 1998-08-27 1999-11-09 Hewlett-Packard Company Magnetic memory cell with off-axis reference layer orientation for improved response
US6072717A (en) * 1998-09-04 2000-06-06 Hewlett Packard Stabilized magnetic memory cell
US6097626A (en) 1999-07-28 2000-08-01 Hewlett-Packard Company MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells
US6172901B1 (en) 1999-12-30 2001-01-09 Stmicroelectronics, S.R.L. Low power static random access memory and method for writing to same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154389A (ja) * 1997-09-18 1999-06-08 Canon Inc 磁気抵抗素子、磁性薄膜メモリ素子および該メモリ素子の記録再生方法
WO2000010172A2 (de) * 1998-08-12 2000-02-24 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
JP2000090658A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101001742B1 (ko) * 2003-10-24 2010-12-15 삼성전자주식회사 자기 램 및 그 제조방법

Also Published As

Publication number Publication date
EP1248265A2 (en) 2002-10-09
JP2003007985A (ja) 2003-01-10
KR20030009094A (ko) 2003-01-29
US6404674B1 (en) 2002-06-11
JP3942931B2 (ja) 2007-07-11
TW541530B (en) 2003-07-11
CN1329916C (zh) 2007-08-01
CN1379408A (zh) 2002-11-13
EP1248265A3 (en) 2003-07-30

Similar Documents

Publication Publication Date Title
KR100816746B1 (ko) 자기 메모리 셀
KR100816747B1 (ko) 클래드형 판독 도전체를 포함하는 터널 접합
US6593608B1 (en) Magneto resistive storage device having double tunnel junction
US7190611B2 (en) Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
US7372727B2 (en) Magnetic cell and magnetic memory
US6963500B2 (en) Magnetic tunneling junction cell array with shared reference layer for MRAM applications
US7983075B2 (en) Nonvolatile memory device
US20090096042A1 (en) Magnetic element having reduced current density
JP2004104127A (ja) マルチビット磁気メモリデバイス
JP2005535125A (ja) スピントランスファーを利用する磁性素子及び磁性素子を使用するｍｒａｍデバイス
JP2001237472A (ja) 磁気抵抗効果素子および磁気抵抗効果記憶素子およびデジタル信号を記憶させる方法
CN100397674C (zh) 具有磁场衰减层的磁控电阻存储器件
JP2004064073A (ja) 磁気メモリデバイスおよび方法
US7826254B2 (en) Magnetic storage device and method for producing the same
JP2004274016A (ja) 磁気記憶半導体装置
JP2004079632A (ja) 半導体集積回路装置
JP4477829B2 (ja) 磁気記憶デバイスを動作させる方法
JP2003188359A (ja) 磁気的に軟らかい合成フェリ磁性体基準層を含む磁気抵抗素子
JP2004087870A (ja) 磁気抵抗効果素子および磁気メモリ装置
JP2004311513A (ja) 磁気記憶装置およびその製造方法
WO2005020327A1 (ja) 磁気記憶セルおよび磁気メモリデバイス
US7056749B2 (en) Simplified magnetic memory cell
Cockburn The emergence of high-density semiconductor-compatible spintronic memory
JP2009146995A (ja) 磁気記憶装置
WO2010021213A1 (ja) 磁気抵抗記憶装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20130228

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140228

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150302

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20170228

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20180228

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20190228

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20200228

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220320

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220320