KR100816541B1 - 실리콘 카바이드 쇼트키 소자용 에피택시 에지 터미네이션및 그것이 결합된 실리콘 카바이드 소자의 제조방법 - Google Patents

실리콘 카바이드 쇼트키 소자용 에피택시 에지 터미네이션및 그것이 결합된 실리콘 카바이드 소자의 제조방법 Download PDF

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KR100816541B1
KR100816541B1 KR1020037006014A KR20037006014A KR100816541B1 KR 100816541 B1 KR100816541 B1 KR 100816541B1 KR 1020037006014 A KR1020037006014 A KR 1020037006014A KR 20037006014 A KR20037006014 A KR 20037006014A KR 100816541 B1 KR100816541 B1 KR 100816541B1
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silicon carbide
type
layer
epitaxy
schottky
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KR20040055717A (ko
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란비어 싱
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Electrodes Of Semiconductors (AREA)
  • Ceramic Products (AREA)
KR1020037006014A 2000-11-28 2001-11-06 실리콘 카바이드 쇼트키 소자용 에피택시 에지 터미네이션및 그것이 결합된 실리콘 카바이드 소자의 제조방법 Expired - Lifetime KR100816541B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/723,710 US6573128B1 (en) 2000-11-28 2000-11-28 Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US09/723,710 2000-11-28
PCT/US2001/047924 WO2002045177A2 (en) 2000-11-28 2001-11-06 Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same

Publications (2)

Publication Number Publication Date
KR20040055717A KR20040055717A (ko) 2004-06-26
KR100816541B1 true KR100816541B1 (ko) 2008-03-26

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KR1020037006014A Expired - Lifetime KR100816541B1 (ko) 2000-11-28 2001-11-06 실리콘 카바이드 쇼트키 소자용 에피택시 에지 터미네이션및 그것이 결합된 실리콘 카바이드 소자의 제조방법

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US (2) US6573128B1 (enExample)
EP (1) EP1354362B1 (enExample)
JP (1) JP4115275B2 (enExample)
KR (1) KR100816541B1 (enExample)
CN (1) CN100370627C (enExample)
AU (1) AU2002229001A1 (enExample)
CA (1) CA2425787C (enExample)
WO (1) WO2002045177A2 (enExample)

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Also Published As

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US6673662B2 (en) 2004-01-06
AU2002229001A1 (en) 2002-06-11
CA2425787A1 (en) 2002-06-06
US6573128B1 (en) 2003-06-03
KR20040055717A (ko) 2004-06-26
CN1663053A (zh) 2005-08-31
JP2004515080A (ja) 2004-05-20
EP1354362B1 (en) 2013-01-16
WO2002045177A3 (en) 2003-01-30
EP1354362A2 (en) 2003-10-22
US20030045045A1 (en) 2003-03-06
CN100370627C (zh) 2008-02-20
WO2002045177A2 (en) 2002-06-06
CA2425787C (en) 2014-09-30
JP4115275B2 (ja) 2008-07-09

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