CA2425787C - Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same - Google Patents
Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same Download PDFInfo
- Publication number
- CA2425787C CA2425787C CA2425787A CA2425787A CA2425787C CA 2425787 C CA2425787 C CA 2425787C CA 2425787 A CA2425787 A CA 2425787A CA 2425787 A CA2425787 A CA 2425787A CA 2425787 C CA2425787 C CA 2425787C
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- type
- layer
- schottky
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Electrodes Of Semiconductors (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/723,710 | 2000-11-28 | ||
| US09/723,710 US6573128B1 (en) | 2000-11-28 | 2000-11-28 | Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same |
| PCT/US2001/047924 WO2002045177A2 (en) | 2000-11-28 | 2001-11-06 | Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2425787A1 CA2425787A1 (en) | 2002-06-06 |
| CA2425787C true CA2425787C (en) | 2014-09-30 |
Family
ID=24907346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2425787A Expired - Lifetime CA2425787C (en) | 2000-11-28 | 2001-11-06 | Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6573128B1 (enExample) |
| EP (1) | EP1354362B1 (enExample) |
| JP (1) | JP4115275B2 (enExample) |
| KR (1) | KR100816541B1 (enExample) |
| CN (1) | CN100370627C (enExample) |
| AU (1) | AU2002229001A1 (enExample) |
| CA (1) | CA2425787C (enExample) |
| WO (1) | WO2002045177A2 (enExample) |
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| US7262434B2 (en) | 2002-03-28 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor device with a silicon carbide substrate and ohmic metal layer |
| US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
| US7026650B2 (en) * | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
| WO2005119793A2 (en) * | 2004-05-28 | 2005-12-15 | Caracal, Inc. | Silicon carbide schottky diodes and fabrication method |
| US7019344B2 (en) * | 2004-06-03 | 2006-03-28 | Ranbir Singh | Lateral drift vertical metal-insulator semiconductor field effect transistor |
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| US7199442B2 (en) * | 2004-07-15 | 2007-04-03 | Fairchild Semiconductor Corporation | Schottky diode structure to reduce capacitance and switching losses and method of making same |
| TWI278090B (en) * | 2004-10-21 | 2007-04-01 | Int Rectifier Corp | Solderable top metal for SiC device |
| US7812441B2 (en) | 2004-10-21 | 2010-10-12 | Siliconix Technology C.V. | Schottky diode with improved surge capability |
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| JP4186919B2 (ja) * | 2004-12-07 | 2008-11-26 | 三菱電機株式会社 | 半導体装置 |
| US9419092B2 (en) * | 2005-03-04 | 2016-08-16 | Vishay-Siliconix | Termination for SiC trench devices |
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| US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
| US8368165B2 (en) * | 2005-10-20 | 2013-02-05 | Siliconix Technology C. V. | Silicon carbide Schottky diode |
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| US7449762B1 (en) | 2006-04-07 | 2008-11-11 | Wide Bandgap Llc | Lateral epitaxial GaN metal insulator semiconductor field effect transistor |
| US7274083B1 (en) * | 2006-05-02 | 2007-09-25 | Semisouth Laboratories, Inc. | Semiconductor device with surge current protection and method of making the same |
| US8269262B2 (en) * | 2006-05-02 | 2012-09-18 | Ss Sc Ip Llc | Vertical junction field effect transistor with mesa termination and method of making the same |
| US7319256B1 (en) | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US9627552B2 (en) * | 2006-07-31 | 2017-04-18 | Vishay-Siliconix | Molybdenum barrier metal for SiC Schottky diode and process of manufacture |
| JP5109333B2 (ja) * | 2006-10-26 | 2012-12-26 | サンケン電気株式会社 | 電源装置 |
| CA2580589C (en) * | 2006-12-19 | 2016-08-09 | Fio Corporation | Microfluidic detection system |
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| US8597729B2 (en) | 2007-06-22 | 2013-12-03 | Fio Corporation | Systems and methods for manufacturing quantum dot-doped polymer microbeads |
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| WO2009012585A1 (en) * | 2007-07-23 | 2009-01-29 | Fio Corporation | A method and system for collating, storing, analyzing and enabling access to collected and analyzed data associated with biological and environmental test subjects |
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| JP5638739B2 (ja) * | 2008-03-07 | 2014-12-10 | 富士電機株式会社 | 半導体装置の製造方法 |
| CN102132330B (zh) | 2008-06-25 | 2015-07-22 | Fio公司 | 生物威胁警报系统 |
| US9459200B2 (en) | 2008-08-29 | 2016-10-04 | Fio Corporation | Single-use handheld diagnostic test device, and an associated system and method for testing biological and environmental test samples |
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| US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
| CN104374932A (zh) | 2009-01-13 | 2015-02-25 | Fio公司 | 与电子设备和快速诊断测试中的测试盒结合使用的手持诊断测试设备 |
| DE112010005101B4 (de) * | 2010-01-08 | 2022-06-02 | Mitsubishi Electric Corporation | Epitaxial-wafer und halbleiterelement |
| US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
| US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
| US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
| CN103199104B (zh) * | 2013-03-05 | 2016-04-27 | 矽力杰半导体技术(杭州)有限公司 | 一种晶圆结构以及应用其的功率器件 |
| US9257511B2 (en) | 2013-03-26 | 2016-02-09 | Infineon Technologies Ag | Silicon carbide device and a method for forming a silicon carbide device |
| US9035322B2 (en) | 2013-03-26 | 2015-05-19 | Infineon Technologies Ag | Silicon carbide device and a method for manufacturing a silicon carbide device |
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| US9960247B2 (en) * | 2016-01-19 | 2018-05-01 | Ruigang Li | Schottky barrier structure for silicon carbide (SiC) power devices |
| ES2911200T3 (es) * | 2016-12-15 | 2022-05-18 | Univ Griffith | Diodos de Schottky de carburo de silicio |
| JP6791274B2 (ja) * | 2017-02-20 | 2020-11-25 | 日立金属株式会社 | 炭化ケイ素積層基板およびその製造方法 |
| CN107452723B (zh) * | 2017-07-26 | 2023-09-15 | 济南市半导体元件实验所 | 一种高压大功率碳化硅肖特基整流桥及其制备方法 |
| SE541290C2 (en) | 2017-09-15 | 2019-06-11 | Ascatron Ab | A method for manufacturing a grid |
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| SE541466C2 (en) | 2017-09-15 | 2019-10-08 | Ascatron Ab | A concept for silicon carbide power devices |
| SE541402C2 (en) | 2017-09-15 | 2019-09-17 | Ascatron Ab | Integration of a schottky diode with a mosfet |
| CN109473485B (zh) * | 2018-12-29 | 2023-07-04 | 重庆伟特森电子科技有限公司 | 碳化硅二极管及其制备方法 |
| WO2020255698A1 (ja) * | 2019-06-19 | 2020-12-24 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板 |
| CN114005739A (zh) * | 2021-10-29 | 2022-02-01 | 重庆平创半导体研究院有限责任公司 | 一种碳化硅jbs器件及其制造方法 |
| CN114530487A (zh) * | 2021-12-30 | 2022-05-24 | 南京中电芯谷高频器件产业技术研究院有限公司 | 带边缘终端的金刚石肖特基二极管的制备方法 |
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| JPS58148469A (ja) | 1982-02-27 | 1983-09-03 | Nippon Telegr & Teleph Corp <Ntt> | シヨツトキダイオ−ド |
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| US4762806A (en) | 1983-12-23 | 1988-08-09 | Sharp Kabushiki Kaisha | Process for producing a SiC semiconductor device |
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| US4875083A (en) | 1987-10-26 | 1989-10-17 | North Carolina State University | Metal-insulator-semiconductor capacitor formed on silicon carbide |
| US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
| US5270252A (en) | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
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| JPH0897441A (ja) | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
| US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
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| US6313482B1 (en) * | 1999-05-17 | 2001-11-06 | North Carolina State University | Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein |
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-
2000
- 2000-11-28 US US09/723,710 patent/US6573128B1/en not_active Expired - Lifetime
-
2001
- 2001-11-06 JP JP2002547239A patent/JP4115275B2/ja not_active Expired - Lifetime
- 2001-11-06 WO PCT/US2001/047924 patent/WO2002045177A2/en not_active Ceased
- 2001-11-06 AU AU2002229001A patent/AU2002229001A1/en not_active Abandoned
- 2001-11-06 EP EP01990131A patent/EP1354362B1/en not_active Expired - Lifetime
- 2001-11-06 CA CA2425787A patent/CA2425787C/en not_active Expired - Lifetime
- 2001-11-06 CN CNB018195601A patent/CN100370627C/zh not_active Expired - Lifetime
- 2001-11-06 KR KR1020037006014A patent/KR100816541B1/ko not_active Expired - Lifetime
-
2002
- 2002-10-03 US US10/264,135 patent/US6673662B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1354362B1 (en) | 2013-01-16 |
| KR100816541B1 (ko) | 2008-03-26 |
| US20030045045A1 (en) | 2003-03-06 |
| WO2002045177A3 (en) | 2003-01-30 |
| EP1354362A2 (en) | 2003-10-22 |
| JP4115275B2 (ja) | 2008-07-09 |
| CN100370627C (zh) | 2008-02-20 |
| WO2002045177A2 (en) | 2002-06-06 |
| JP2004515080A (ja) | 2004-05-20 |
| AU2002229001A1 (en) | 2002-06-11 |
| US6673662B2 (en) | 2004-01-06 |
| CA2425787A1 (en) | 2002-06-06 |
| CN1663053A (zh) | 2005-08-31 |
| US6573128B1 (en) | 2003-06-03 |
| KR20040055717A (ko) | 2004-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |