KR100814234B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100814234B1
KR100814234B1 KR1020030000520A KR20030000520A KR100814234B1 KR 100814234 B1 KR100814234 B1 KR 100814234B1 KR 1020030000520 A KR1020030000520 A KR 1020030000520A KR 20030000520 A KR20030000520 A KR 20030000520A KR 100814234 B1 KR100814234 B1 KR 100814234B1
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KR
South Korea
Prior art keywords
insulating film
layer
wiring
wiring layer
polishing
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Expired - Fee Related
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KR1020030000520A
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English (en)
Korean (ko)
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KR20030095189A (ko
Inventor
미야지마모또슈
가라사와도시유끼
호소다쯔또무
오쯔까사또시
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후지쯔 가부시끼가이샤
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Publication of KR20030095189A publication Critical patent/KR20030095189A/ko
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Assigned to 후지쯔 세미컨덕터 가부시키가이샤 reassignment 후지쯔 세미컨덕터 가부시키가이샤 권리의 전부이전등록 Assignors: 후지쯔 가부시끼가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020030000520A 2002-06-07 2003-01-06 반도체 장치의 제조 방법 Expired - Fee Related KR100814234B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00166621 2002-06-07
JP2002166621A JP4076131B2 (ja) 2002-06-07 2002-06-07 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20030095189A KR20030095189A (ko) 2003-12-18
KR100814234B1 true KR100814234B1 (ko) 2008-03-17

Family

ID=29706730

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030000520A Expired - Fee Related KR100814234B1 (ko) 2002-06-07 2003-01-06 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US6686285B2 (https=)
JP (1) JP4076131B2 (https=)
KR (1) KR100814234B1 (https=)
CN (1) CN1225019C (https=)
TW (1) TWI224536B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253791A (ja) * 2003-01-29 2004-09-09 Nec Electronics Corp 絶縁膜およびそれを用いた半導体装置
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
JP2006165214A (ja) * 2004-12-07 2006-06-22 Sony Corp 半導体装置およびその製造方法
KR100711912B1 (ko) * 2005-12-28 2007-04-27 동부일렉트로닉스 주식회사 반도체 소자의 금속 배선 형성 방법
JP4231055B2 (ja) * 2006-02-06 2009-02-25 株式会社東芝 半導体装置及びその製造方法
JP2007251135A (ja) * 2006-02-18 2007-09-27 Seiko Instruments Inc 半導体装置およびその製造方法
JP2007294514A (ja) * 2006-04-21 2007-11-08 Renesas Technology Corp 半導体装置
US8193087B2 (en) * 2006-05-18 2012-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Process for improving copper line cap formation
JP2010171064A (ja) * 2009-01-20 2010-08-05 Panasonic Corp 半導体装置及びその製造方法
JP2012064713A (ja) * 2010-09-15 2012-03-29 Toshiba Corp 半導体装置の製造方法
US11862607B2 (en) * 2021-08-16 2024-01-02 Micron Technology, Inc. Composite dielectric structures for semiconductor die assemblies and associated systems and methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980048378A (ko) * 1996-12-17 1998-09-15 김광호 반도체소자의 평탄화방법
KR20020010440A (ko) * 1999-12-21 2002-02-04 조셉 제이. 스위니 부식 및 다이싱이 감소되는 고스루풋 구리 화학 기계적연마(ｃｍｐ) 방법 및 장치

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FR2630588A1 (fr) * 1988-04-22 1989-10-27 Philips Nv Procede pour realiser une configuration d'interconnexion sur un dispositif semiconducteur notamment un circuit a densite d'integration elevee
US6140226A (en) * 1998-01-16 2000-10-31 International Business Machines Corporation Dual damascene processing for semiconductor chip interconnects
US6420261B2 (en) * 1998-08-31 2002-07-16 Fujitsu Limited Semiconductor device manufacturing method
US6150272A (en) * 1998-11-16 2000-11-21 Taiwan Semiconductor Manufacturing Company Method for making metal plug contacts and metal lines in an insulating layer by chemical/mechanical polishing that reduces polishing-induced damage
KR100292409B1 (ko) * 1999-05-24 2001-06-01 윤종용 실리콘-메틸 결합을 함유하는 절연층을 포함하는 다층 구조의 절연막 및 그 형성방법
JP2001144086A (ja) * 1999-08-31 2001-05-25 Sony Corp 埋め込み配線の形成方法、及び、基体処理装置
US6380003B1 (en) * 1999-12-22 2002-04-30 International Business Machines Corporation Damascene anti-fuse with slot via
US6503827B1 (en) * 2000-06-28 2003-01-07 International Business Machines Corporation Method of reducing planarization defects
JP3917355B2 (ja) * 2000-09-21 2007-05-23 株式会社東芝 半導体装置およびその製造方法
US20020064951A1 (en) * 2000-11-30 2002-05-30 Eissa Mona M. Treatment of low-k dielectric films to enable patterning of deep submicron features
US6432811B1 (en) * 2000-12-20 2002-08-13 Intel Corporation Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures
US6583047B2 (en) * 2000-12-26 2003-06-24 Honeywell International, Inc. Method for eliminating reaction between photoresist and OSG
JP4160277B2 (ja) * 2001-06-29 2008-10-01 株式会社東芝 半導体装置の製造方法
US6562725B2 (en) * 2001-07-05 2003-05-13 Taiwan Semiconductor Manufacturing Co., Ltd Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers
KR100442863B1 (ko) * 2001-08-01 2004-08-02 삼성전자주식회사 금속-절연체-금속 커패시터 및 다마신 배선 구조를 갖는반도체 소자의 제조 방법
JP4131786B2 (ja) * 2001-09-03 2008-08-13 株式会社東芝 半導体装置の製造方法およびウエハ構造体
US6440840B1 (en) * 2002-01-25 2002-08-27 Taiwan Semiconductor Manufactoring Company Damascene process to eliminate copper defects during chemical-mechanical polishing (CMP) for making electrical interconnections on integrated circuits
US6531386B1 (en) * 2002-02-08 2003-03-11 Chartered Semiconductor Manufacturing Ltd. Method to fabricate dish-free copper interconnects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980048378A (ko) * 1996-12-17 1998-09-15 김광호 반도체소자의 평탄화방법
KR20020010440A (ko) * 1999-12-21 2002-02-04 조셉 제이. 스위니 부식 및 다이싱이 감소되는 고스루풋 구리 화학 기계적연마(ｃｍｐ) 방법 및 장치

Also Published As

Publication number Publication date
TW200307589A (en) 2003-12-16
CN1225019C (zh) 2005-10-26
JP4076131B2 (ja) 2008-04-16
US20030228765A1 (en) 2003-12-11
KR20030095189A (ko) 2003-12-18
JP2004014828A (ja) 2004-01-15
TWI224536B (en) 2004-12-01
US6686285B2 (en) 2004-02-03
CN1467817A (zh) 2004-01-14

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