KR100809842B1 - 고해상도 패턴형성방법 및 상기 방법에 따라 프리패턴이형성된 기판 - Google Patents
고해상도 패턴형성방법 및 상기 방법에 따라 프리패턴이형성된 기판 Download PDFInfo
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- KR100809842B1 KR100809842B1 KR1020060004609A KR20060004609A KR100809842B1 KR 100809842 B1 KR100809842 B1 KR 100809842B1 KR 1020060004609 A KR1020060004609 A KR 1020060004609A KR 20060004609 A KR20060004609 A KR 20060004609A KR 100809842 B1 KR100809842 B1 KR 100809842B1
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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Abstract
Description
Claims (20)
- 제1물질로 된 희생층이 부분 또는 전면 형성된 기판을 제공하는 제1단계;제1수단으로 희생층에 제1물질이 존재하지 않으면서 선폭이 최고 제1해상도를 갖는 패턴 홈을 형성하는 제2단계;제2수단을 사용하여 제2물질을 상기 패턴 홈에 충진하는 제3단계; 및광 또는 열 조사에 의해 잔여 희생층에 존재하는 제1물질을 제거하는 제4단계를 포함하며,제1물질의 최소 경계 조사량(threshold fluence)이 제2물질의 최소 경계 조사량 보다 작고,제4단계에서 제1물질의 최소 경계 조사량 이상 제2물질의 최소 경계 조사량 미만의 조사량으로 제1물질을 제거하는 것이 특징인 기판상에 제2물질로 패턴을 형성하는 방법.
- 제1항에 있어서, 제3단계는 상기 제1단계에서 형성된 패턴 홈의 선폭 보다 낮은 제2해상도로 제2물질을 패턴 홈에 충진하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제4단계는 잔여 희생층 제거시 희생층 상부에 적층되어 있는 제2물질도 함께 제거되는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제3단계에서 제2수단을 사용하여 제2해상도로 제2물질을 상기 패턴 홈에 충진하면서, 상기 희생층이 없는 영역에는 제2해상도 또는 제2해상도와 상이한 제3해상도로 제2물질로 된 패턴을 추가 형성하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제1단계에서 제2수단과 동일 또는 상이한 제3수단을 사용하여 형성하고자 하는 패턴 홈의 해상도와 다른 제4해상도로 희생층을 패턴 형성시킨 기판을 제공하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제2단계에서 희생층 제거시 제1수단으로 집속에너지 빔을 사용하고, 상기 집속에너지 빔의 형상을 제어하기 위해 마스크 또는 광학회절소자를 사용하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제2단계에서 최고 제1해상도를 갖는 제1수단으로 희생층 제거시, 제1해상도 보다 높은 제5해상도를 갖는 마스크 또는 광학회절소자를 사용하여 최고 제5해상도를 갖는 패턴 홈을 형성하고, 제3단계에서 제2수단을 사용하여 제2물질을 상기 제5해상도 보다 낮은 제2해상도로 상기 패턴 홈에 충진하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제1물질로 된 희생층은 이미 패턴된 영역들을 포함하는 기 판 상에 형성되어 있는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제4단계에서 잔여 희생층에 존재하는 제1물질을 제거하기 위해 집속 에너지빔을 조사하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 제1수단은 집속에너지빔을 조사하는 것이고, 제2수단은 잉크젯을 사용하는 것이 특징인 패턴 형성 방법.
- 제1항에 있어서, 추가로, 희생층을 형성시키는 제1단계 이후 보호층을 최상부에 형성하고 제2단계 이후에 상기 보호층을 제거하거나; 또는 패턴 형성용 제2물질을 적층하는 제3단계 이후 보호층을 최상부에 형성하고 제4단계 이후에 상기 보호층을 제거하는 공정을 포함하는 것이 특징인 패턴 형성 방법.
- 제1물질로 된 희생층이 부분 또는 전면 형성된 기판으로서,상기 기판상의 희생층은 제1물질이 존재하지 않으면서 선폭이 최고 제1해상도를 갖는 패턴 홈이 형성되어 있고,제2물질이 최고 제1해상도를 갖는 패턴 홈에 충진되어 있으며,제1물질의 최소 경계 조사량(threshold fluence)이 제2물질의 최소 경계 조사량 보다 작은 것이 특징인 프리패턴이 형성된 기판.
- 제12항에 있어서, 상기 패턴 홈의 선폭 보다 낮은 제2해상도로 제2물질이 패턴 홈에 충진되어 있는 것이 특징인 기판.
- 제13항에 있어서, 희생층이 존재하는 영역 중 패턴 홈에 제2해상도로 제2물질이 충진되어 있으면서, 상기 희생층이 없는 영역에는 제2해상도 또는 제2해상도와 상이한 제3해상도로 제2물질로 된 패턴이 추가 형성된 것이 특징인 기판.
- 제12항 또는 제14항에 있어서, 상기 기판은 잔여 희생층이 제거된 것이 특징인 기판.
- 제12항 또는 제14항에 있어서, 상기 제1물질로 된 희생층은 이미 패턴된 영역들을 포함하는 기판 상에 형성되어 있는 것이 특징인 기판.
- 제12항 또는 제14항에 있어서, 희생층 상에 형성된 패턴 홈의 해상도와 다른 제4해상도로 희생층이 기판상에 패턴 형성된 것이 특징인 기판.
- 제12항에 있어서, 최소 경계 조사량은 집속 에너지빔에 대한 것이 특징인 기판.
- 제12항 또는 제14항에 있어서, 희생층에 형성된 패턴 홈은 집속 에너지빔 조 사에 의해 형성된 것이고, 상기 패턴 홈에 충진된 제2물질은 잉크젯을 통해 충진된 것이 특징인 기판.
- 제12항 또는 제14항에 있어서, 희생층 형성용 제1물질, 또는 제1물질과 함께 희생층 상부에 잔존하는 패턴 형성용 제2물질이 제거된 후 패턴된 부위 또는 기판에 재부착되는 것을 방지하는 보호층이 형성되어 있는 것이 특징인 기판.
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GB0723991A GB2443342B (en) | 2005-05-12 | 2006-05-12 | Method for forming high-resolution pattern and substrate having prepattern formed thereby |
PCT/KR2006/001768 WO2006121297A1 (en) | 2005-05-12 | 2006-05-12 | Method for forming high-resolution pattern and substrate having prepattern formed thereby |
DE112006001203T DE112006001203B4 (de) | 2005-05-12 | 2006-05-12 | Verfahren zum Bilden eines hoch auflösenden Musters |
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