KR100808820B1 - 진공처리 장치 - Google Patents

진공처리 장치 Download PDF

Info

Publication number
KR100808820B1
KR100808820B1 KR1020067027765A KR20067027765A KR100808820B1 KR 100808820 B1 KR100808820 B1 KR 100808820B1 KR 1020067027765 A KR1020067027765 A KR 1020067027765A KR 20067027765 A KR20067027765 A KR 20067027765A KR 100808820 B1 KR100808820 B1 KR 100808820B1
Authority
KR
South Korea
Prior art keywords
chamber
processing chamber
carrying
processing
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067027765A
Other languages
English (en)
Korean (ko)
Other versions
KR20070032968A (ko
Inventor
세이이치 다카하시
다케히사 미야마
수부 임
마사유키 사토우
겐고 츠츠미
요헤이 오노
Original Assignee
가부시키가이샤 알박
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20070032968A publication Critical patent/KR20070032968A/ko
Application granted granted Critical
Publication of KR100808820B1 publication Critical patent/KR100808820B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H10P72/3306—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • H10P72/0462—
    • H10P72/0466—
    • H10P72/3308—
    • H10P50/242—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020067027765A 2004-06-30 2005-06-28 진공처리 장치 Expired - Fee Related KR100808820B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004193569 2004-06-30
JPJP-P-2004-00193569 2004-06-30
PCT/JP2005/011808 WO2006003880A1 (ja) 2004-06-30 2005-06-28 真空処理装置

Publications (2)

Publication Number Publication Date
KR20070032968A KR20070032968A (ko) 2007-03-23
KR100808820B1 true KR100808820B1 (ko) 2008-03-03

Family

ID=35782687

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067027765A Expired - Fee Related KR100808820B1 (ko) 2004-06-30 2005-06-28 진공처리 장치

Country Status (7)

Country Link
US (1) US7682481B2 (cg-RX-API-DMAC10.html)
JP (1) JP4673308B2 (cg-RX-API-DMAC10.html)
KR (1) KR100808820B1 (cg-RX-API-DMAC10.html)
CN (1) CN100492599C (cg-RX-API-DMAC10.html)
DE (1) DE112005001539B4 (cg-RX-API-DMAC10.html)
TW (1) TW200607013A (cg-RX-API-DMAC10.html)
WO (1) WO2006003880A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100841741B1 (ko) * 2007-04-04 2008-06-27 주식회사 싸이맥스 진공처리장치
EP4056740A1 (de) * 2021-03-10 2022-09-14 Siltronic AG Verfahren zum herstellen von halbleiterscheiben mit epitaktischer schicht in einer kammer eines abscheidereaktors
CN114481098A (zh) * 2022-01-17 2022-05-13 成都四威高科技产业园有限公司 一种具有防护功能的腔室pecvd设备传动装置
DE102022129723A1 (de) 2022-11-10 2024-05-16 Aixtron Se CVD-Reaktor mit herausnehmbarem Prozesskammergehäuse

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111449A (ja) * 1994-08-19 1996-04-30 Tokyo Electron Ltd 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
JPH01257193A (ja) * 1988-04-08 1989-10-13 Sumitomo Electric Ind Ltd 半導体気相成長装置
JPH06267808A (ja) * 1993-03-15 1994-09-22 Hitachi Ltd チャンバ接続用ガイド機構付きマルチチャンバ装置
JP4906999B2 (ja) * 2000-07-12 2012-03-28 株式会社アルバック 真空装置
TWI290589B (en) * 2000-10-02 2007-12-01 Tokyo Electron Ltd Vacuum processing device
JP2003229417A (ja) * 2001-11-28 2003-08-15 Tokyo Electron Ltd 真空処理装置及びその制御方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111449A (ja) * 1994-08-19 1996-04-30 Tokyo Electron Ltd 処理装置
JP2000182967A (ja) * 1998-12-15 2000-06-30 Sony Corp 気相成長方法および気相成長装置
JP2000273631A (ja) * 1999-03-24 2000-10-03 Olympus Optical Co Ltd スパッタリング装置
JP2001035842A (ja) * 1999-07-19 2001-02-09 Sony Corp Ｃｖｄ装置及び半導体装置の製造方法
JP2002280438A (ja) * 2001-03-19 2002-09-27 Ulvac Japan Ltd 真空処理方法

Also Published As

Publication number Publication date
DE112005001539T5 (de) 2007-05-16
WO2006003880A1 (ja) 2006-01-12
KR20070032968A (ko) 2007-03-23
DE112005001539B4 (de) 2013-04-25
CN100492599C (zh) 2009-05-27
CN1977363A (zh) 2007-06-06
TW200607013A (en) 2006-02-16
JPWO2006003880A1 (ja) 2008-04-17
TWI380356B (cg-RX-API-DMAC10.html) 2012-12-21
US7682481B2 (en) 2010-03-23
US20070151669A1 (en) 2007-07-05
JP4673308B2 (ja) 2011-04-20

Similar Documents

Publication Publication Date Title
US5223001A (en) Vacuum processing apparatus
US4908095A (en) Etching device, and etching method
KR100831933B1 (ko) 기판처리장치 및 반도체장치의 제조방법
CN101206412B (zh) 减压干燥装置
KR101088289B1 (ko) 탑재대, 처리 장치 및 처리 시스템
CN102859031B (zh) 真空处理装置、基板和对位掩模的移动方法以及对位方法及成膜方法
KR101400157B1 (ko) 기판처리장치, 기판처리설비 및 기판처리방법
JP2003077974A (ja) 基板処理装置および半導体装置の製造方法
CN1841652A (zh) 负载锁定装置、处理系统及处理方法
KR100702844B1 (ko) 로드락 챔버 및 그를 이용한 반도체 제조설비
KR100532584B1 (ko) 기판 처리 장치, 기판 처리 방법 및 반도체 장치의 제조방법
JP2003007800A (ja) 基板処理装置および半導体装置の製造方法
JP2003124284A (ja) 基板処理装置および半導体装置の製造方法
TWI484555B (zh) 基板處理裝置及半導體裝置之製造方法
CN106898566B (zh) 一种半导体加工设备
CN107790355B (zh) 减压干燥装置、减压干燥系统、减压干燥方法
JP2002359237A (ja) 基板処理装置および半導体装置の製造方法
KR100808820B1 (ko) 진공처리 장치
JP2002246432A (ja) 基板処理装置
JP2023029521A (ja) 基板処理装置
JP2741156B2 (ja) マルチチャンバー処理装置のクリーニング方法
KR20130016359A (ko) 기판 처리 방법 및 기판 처리 시스템
KR0166381B1 (ko) 진공처리장치
JP3666636B2 (ja) 基板の処理装置
JP2005347667A (ja) 半導体製造装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20130124

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20140211

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20150126

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20160212

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20170203

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20181121

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20200213

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20250226

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

H13 Ip right lapsed

Free format text: ST27 STATUS EVENT CODE: N-4-6-H10-H13-OTH-PC1903 (AS PROVIDED BY THE NATIONAL OFFICE); TERMINATION CATEGORY : DEFAULT_OF_REGISTRATION_FEE

Effective date: 20250226

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20250226

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000