KR100803264B1 - 횡형 절연 게이트 바이폴라 트랜지스터 - Google Patents

횡형 절연 게이트 바이폴라 트랜지스터 Download PDF

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Publication number
KR100803264B1
KR100803264B1 KR1020060078350A KR20060078350A KR100803264B1 KR 100803264 B1 KR100803264 B1 KR 100803264B1 KR 1020060078350 A KR1020060078350 A KR 1020060078350A KR 20060078350 A KR20060078350 A KR 20060078350A KR 100803264 B1 KR100803264 B1 KR 100803264B1
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South Korea
Prior art keywords
single crystal
crystal silicon
collector
stripe
region
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KR1020060078350A
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English (en)
Korean (ko)
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KR20070032905A (ko
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도모유키 우츠미
다카히로 시부야
쇼이치 오제키
히로유키 하세가와
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
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Publication of KR20070032905A publication Critical patent/KR20070032905A/ko
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Publication of KR100803264B1 publication Critical patent/KR100803264B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
KR1020060078350A 2005-09-20 2006-08-18 횡형 절연 게이트 바이폴라 트랜지스터 KR100803264B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00271283 2005-09-20
JP2005271283A JP5061443B2 (ja) 2005-09-20 2005-09-20 横型絶縁ゲートバイポーラトランジスタ

Publications (2)

Publication Number Publication Date
KR20070032905A KR20070032905A (ko) 2007-03-23
KR100803264B1 true KR100803264B1 (ko) 2008-02-14

Family

ID=37954624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060078350A KR100803264B1 (ko) 2005-09-20 2006-08-18 횡형 절연 게이트 바이폴라 트랜지스터

Country Status (3)

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JP (1) JP5061443B2 (ja)
KR (1) KR100803264B1 (ja)
CN (1) CN100456480C (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7932581B2 (en) * 2009-05-12 2011-04-26 Mediatek Inc. Lateral bipolar junction transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745699A (ja) * 1993-07-27 1995-02-14 Toshiba Corp 誘電体分離型半導体装置
JP2000058821A (ja) 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置
KR20000014740A (ko) * 1998-08-24 2000-03-15 김덕중 수평형 절연 게이트 바이폴라 트랜지스터

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
JP4292595B2 (ja) * 1998-06-02 2009-07-08 株式会社デンソー 半導体装置
JP4206543B2 (ja) * 1999-02-02 2009-01-14 株式会社デンソー 半導体装置
JP3382172B2 (ja) * 1999-02-04 2003-03-04 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
JP4040229B2 (ja) * 1999-02-14 2008-01-30 矢崎総業株式会社 交流用スイッチングデバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0745699A (ja) * 1993-07-27 1995-02-14 Toshiba Corp 誘電体分離型半導体装置
JP2000058821A (ja) 1998-08-10 2000-02-25 Hitachi Ltd 半導体装置
KR20000014740A (ko) * 1998-08-24 2000-03-15 김덕중 수평형 절연 게이트 바이폴라 트랜지스터

Also Published As

Publication number Publication date
KR20070032905A (ko) 2007-03-23
JP2007087984A (ja) 2007-04-05
CN1937230A (zh) 2007-03-28
JP5061443B2 (ja) 2012-10-31
CN100456480C (zh) 2009-01-28

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