KR100794479B1 - 퓨즈 링크용의 온-칩 트림 링크 감지 및 래치 회로 - Google Patents

퓨즈 링크용의 온-칩 트림 링크 감지 및 래치 회로 Download PDF

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Publication number
KR100794479B1
KR100794479B1 KR1020010048001A KR20010048001A KR100794479B1 KR 100794479 B1 KR100794479 B1 KR 100794479B1 KR 1020010048001 A KR1020010048001 A KR 1020010048001A KR 20010048001 A KR20010048001 A KR 20010048001A KR 100794479 B1 KR100794479 B1 KR 100794479B1
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KR
South Korea
Prior art keywords
pulse
fuse link
latch
logic level
link
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020010048001A
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English (en)
Korean (ko)
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KR20020013452A (ko
Inventor
레셔마크케이
로파타더글라스디
Original Assignee
에이저 시스템즈 인크
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Application filed by 에이저 시스템즈 인크 filed Critical 에이저 시스템즈 인크
Publication of KR20020013452A publication Critical patent/KR20020013452A/ko
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Publication of KR100794479B1 publication Critical patent/KR100794479B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Fuses (AREA)
KR1020010048001A 2000-08-09 2001-08-09 퓨즈 링크용의 온-칩 트림 링크 감지 및 래치 회로 Expired - Fee Related KR100794479B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/634790 2000-08-09
US09/634,790 US6400208B1 (en) 2000-08-09 2000-08-09 On-chip trim link sensing and latching circuit for fuse links

Publications (2)

Publication Number Publication Date
KR20020013452A KR20020013452A (ko) 2002-02-20
KR100794479B1 true KR100794479B1 (ko) 2008-01-16

Family

ID=24545194

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010048001A Expired - Fee Related KR100794479B1 (ko) 2000-08-09 2001-08-09 퓨즈 링크용의 온-칩 트림 링크 감지 및 래치 회로

Country Status (6)

Country Link
US (1) US6400208B1 (cg-RX-API-DMAC7.html)
EP (1) EP1184874B1 (cg-RX-API-DMAC7.html)
JP (1) JP2002158289A (cg-RX-API-DMAC7.html)
KR (1) KR100794479B1 (cg-RX-API-DMAC7.html)
DE (1) DE60107633T2 (cg-RX-API-DMAC7.html)
TW (1) TW522407B (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100470168B1 (ko) * 2002-05-27 2005-02-07 주식회사 하이닉스반도체 안티퓨즈 회로
US6670843B1 (en) * 2002-07-31 2003-12-30 Advanced Micro Devices, Inc. Method and apparatus for sensing a programming state of fuses
KR100481179B1 (ko) * 2002-09-10 2005-04-07 삼성전자주식회사 퓨즈를 구비한 회로 및 이를 이용한 반도체 장치
KR100660899B1 (ko) * 2005-12-15 2006-12-26 삼성전자주식회사 누설 전류 패스를 제거할 수 있는 퓨즈 회로
US20080211513A1 (en) * 2007-02-15 2008-09-04 Stmicroelectronics, Inc. Initiation of fuse sensing circuitry and storage of sensed fuse status information
KR100930411B1 (ko) * 2008-04-10 2009-12-08 주식회사 하이닉스반도체 퓨즈 정보 제어 장치, 이를 이용한 반도체 집적회로 및그의 퓨즈 정보 제어 방법
KR101050110B1 (ko) * 2009-12-28 2011-07-19 전자부품연구원 공정변화를 보정하기 위한 퓨징장치
CN112986796A (zh) * 2021-02-07 2021-06-18 昂宝电子（上海）有限公司 用于芯片的参数修调装置和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274266A (ja) * 1995-03-29 1996-10-18 Hitachi Ltd ヒューズトリミング回路及びそれを備えた半導体集積回路
KR0164378B1 (ko) * 1995-04-13 1999-02-18 김광호 반도체 메모리장치의 퓨즈 상태 감지회로
KR20000035216A (ko) * 1998-11-05 2000-06-26 가네꼬 히사시 용장 회로를 갖는 반도체 메모리 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01184796A (ja) * 1988-01-19 1989-07-24 Nec Corp 半導体メモリ装置
KR900008554B1 (ko) * 1988-04-23 1990-11-24 삼성전자 주식회사 메모리 동작모드 선택회로
US5345110A (en) * 1993-04-13 1994-09-06 Micron Semiconductor, Inc. Low-power fuse detect and latch circuit
JP3080520B2 (ja) * 1993-09-21 2000-08-28 富士通株式会社 シンクロナスｄｒａｍ
KR0144711B1 (ko) * 1994-12-13 1998-08-17 김광호 반도체 메모리장치의 테스트 제어회로 및 방법
KR0147194B1 (ko) * 1995-05-26 1998-11-02 문정환 반도체 메모리 소자
KR100204340B1 (ko) * 1996-06-19 1999-06-15 윤종용 메모리 장치의 모드 셋팅 회로
US5933376A (en) 1997-02-28 1999-08-03 Lucent Technologies Inc. Semiconductor memory device with electrically programmable redundancy
US5991220A (en) 1998-03-09 1999-11-23 Lucent Technologies, Inc. Software programmable write-once fuse memory
US6028756A (en) 1998-03-11 2000-02-22 Lucent Technologies, Inc. Using topological features to lower the blowing current needed for fuses
JP2000132990A (ja) * 1998-10-27 2000-05-12 Fujitsu Ltd 冗長判定回路、半導体記憶装置及び冗長判定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08274266A (ja) * 1995-03-29 1996-10-18 Hitachi Ltd ヒューズトリミング回路及びそれを備えた半導体集積回路
KR0164378B1 (ko) * 1995-04-13 1999-02-18 김광호 반도체 메모리장치의 퓨즈 상태 감지회로
KR20000035216A (ko) * 1998-11-05 2000-06-26 가네꼬 히사시 용장 회로를 갖는 반도체 메모리 장치

Also Published As

Publication number Publication date
EP1184874B1 (en) 2004-12-08
EP1184874A2 (en) 2002-03-06
KR20020013452A (ko) 2002-02-20
TW522407B (en) 2003-03-01
US6400208B1 (en) 2002-06-04
DE60107633T2 (de) 2005-11-03
EP1184874A3 (en) 2002-07-31
DE60107633D1 (de) 2005-01-13
JP2002158289A (ja) 2002-05-31

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