KR100791208B1 - 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물 - Google Patents

마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물 Download PDF

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Publication number
KR100791208B1
KR100791208B1 KR1020060036513A KR20060036513A KR100791208B1 KR 100791208 B1 KR100791208 B1 KR 100791208B1 KR 1020060036513 A KR1020060036513 A KR 1020060036513A KR 20060036513 A KR20060036513 A KR 20060036513A KR 100791208 B1 KR100791208 B1 KR 100791208B1
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South Korea
Prior art keywords
thick film
composition
conductive composition
present
weight percent
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Expired - Fee Related
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KR1020060036513A
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English (en)
Korean (ko)
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KR20060112613A (ko
Inventor
패트리샤 제이. 올리비어
케네스 워렌 행
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이 아이 듀폰 디 네모아 앤드 캄파니
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
    • C03C3/112—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine
    • C03C3/115—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron
    • C03C3/118—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/06—Frit compositions, i.e. in a powdered or comminuted form containing halogen
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y10T428/24909—Free metal or mineral containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Conductive Materials (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
KR1020060036513A 2005-04-25 2006-04-24 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물 Expired - Fee Related KR100791208B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US67443405P 2005-04-25 2005-04-25
US60/674,434 2005-04-25
US11/398,141 2006-04-05
US11/398,141 US7326367B2 (en) 2005-04-25 2006-04-05 Thick film conductor paste compositions for LTCC tape in microwave applications

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070105605A Division KR100798263B1 (ko) 2005-04-25 2007-10-19 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물

Publications (2)

Publication Number Publication Date
KR20060112613A KR20060112613A (ko) 2006-11-01
KR100791208B1 true KR100791208B1 (ko) 2008-01-02

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020060036513A Expired - Fee Related KR100791208B1 (ko) 2005-04-25 2006-04-24 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물
KR1020070105605A Expired - Fee Related KR100798263B1 (ko) 2005-04-25 2007-10-19 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020070105605A Expired - Fee Related KR100798263B1 (ko) 2005-04-25 2007-10-19 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물

Country Status (6)

Country Link
US (1) US7326367B2 (enExample)
EP (1) EP1717858A1 (enExample)
JP (1) JP5180443B2 (enExample)
KR (2) KR100791208B1 (enExample)
CN (1) CN1873837B (enExample)
TW (1) TWI340984B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN110544550A (zh) * 2019-09-12 2019-12-06 西安宏星电子浆料科技股份有限公司 一种高温共烧填孔浆料

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US7326367B2 (en) 2005-04-25 2008-02-05 E.I. Du Pont De Nemours And Company Thick film conductor paste compositions for LTCC tape in microwave applications
US7731868B2 (en) 2007-04-12 2010-06-08 E.I. Du Pont De Nemours And Company Thick film conductive composition and process for use in the manufacture of semiconductor device
KR20110003360A (ko) * 2008-04-09 2011-01-11 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법
WO2010027145A1 (ko) * 2008-09-05 2010-03-11 (주) 탑엔지니어링 Mems 프로브용 카드 및 그의 제조 방법
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JP2013516771A (ja) * 2009-12-31 2013-05-13 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 低温同時焼成セラミックの回路およびデバイスで使用するための混合金属システム導体
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
US20110195540A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
US20110256658A1 (en) * 2010-02-05 2011-10-20 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
CN102030471B (zh) * 2010-10-18 2012-12-19 南京工业大学 一种低温共烧玻璃和陶瓷多层微电路基片及其制备方法
KR20140019473A (ko) * 2011-07-05 2014-02-14 히타치가세이가부시끼가이샤 n 형 확산층 형성 조성물, n 형 확산층의 제조 방법 및 태양 전지 소자의 제조 방법
EP3007210A3 (en) * 2011-07-19 2016-04-20 Hitachi Chemical Company, Ltd. Composition for forming n-type diffusion layer, method of producing n-type diffusion layer, and method of producing photovoltaic cell element
CN104157326B (zh) * 2014-08-05 2017-09-05 上海蓝沛新材料科技股份有限公司 一种应用于低温共烧陶瓷的内电极导电金浆及其制备方法
CN105957642B (zh) * 2016-06-08 2017-11-28 天津大学 一种用于ltcc基板的二氧化硅包覆铜电子浆料的制备方法
CN108053915A (zh) * 2017-12-18 2018-05-18 西安宏星电子浆料科技有限责任公司 丝网印刷用金基导体浆料及其制备方法
CN112673435B (zh) * 2018-09-07 2023-01-06 福禄公司 用于氮化硅和其他基底的导电厚膜浆料
CN113506648B (zh) * 2021-09-10 2021-12-21 西安宏星电子浆料科技股份有限公司 一种Ca-B-Si体系LTCC用内层金导体浆料

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KR20070105296A (ko) 2007-10-30
US20070295939A1 (en) 2007-12-27
CN1873837B (zh) 2011-08-24
TW200703370A (en) 2007-01-16
JP5180443B2 (ja) 2013-04-10
US7326367B2 (en) 2008-02-05
TWI340984B (en) 2011-04-21
KR20060112613A (ko) 2006-11-01
EP1717858A1 (en) 2006-11-02
JP2006344582A (ja) 2006-12-21
CN1873837A (zh) 2006-12-06

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