KR100760337B1 - 시드층 보수방법 - Google Patents
시드층 보수방법 Download PDFInfo
- Publication number
- KR100760337B1 KR100760337B1 KR1020000076361A KR20000076361A KR100760337B1 KR 100760337 B1 KR100760337 B1 KR 100760337B1 KR 1020000076361 A KR1020000076361 A KR 1020000076361A KR 20000076361 A KR20000076361 A KR 20000076361A KR 100760337 B1 KR100760337 B1 KR 100760337B1
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- seed layer
- metal
- substrate
- metal seed
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 53
- 230000008439 repair process Effects 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 132
- 239000002184 metal Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 27
- 238000001465 metallisation Methods 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims description 61
- 239000010949 copper Substances 0.000 claims description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 59
- 230000002378 acidificating effect Effects 0.000 claims description 39
- 239000002253 acid Substances 0.000 claims description 29
- 239000005749 Copper compound Substances 0.000 claims description 21
- 150000001880 copper compounds Chemical class 0.000 claims description 21
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 11
- 150000007513 acids Chemical class 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- -1 copper halide Chemical class 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920000570 polyether Polymers 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229920005682 EO-PO block copolymer Polymers 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 claims description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical class C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
- 229920001400 block copolymer Polymers 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- YRNNKGFMTBWUGL-UHFFFAOYSA-L copper(ii) perchlorate Chemical compound [Cu+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O YRNNKGFMTBWUGL-UHFFFAOYSA-L 0.000 claims description 2
- IJCCOEGCVILSMZ-UHFFFAOYSA-L copper;dichlorate Chemical compound [Cu+2].[O-]Cl(=O)=O.[O-]Cl(=O)=O IJCCOEGCVILSMZ-UHFFFAOYSA-L 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 2
- 239000010695 polyglycol Substances 0.000 claims description 2
- 239000000080 wetting agent Substances 0.000 claims description 2
- JHDWXFZTDQUUSP-UHFFFAOYSA-N CCCCCCCCO.OC(=O)CC(O)(C(O)=O)CC(O)=O Chemical compound CCCCCCCCO.OC(=O)CC(O)(C(O)=O)CC(O)=O JHDWXFZTDQUUSP-UHFFFAOYSA-N 0.000 claims 1
- 239000004721 Polyphenylene oxide Substances 0.000 claims 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 178
- 235000012431 wafers Nutrition 0.000 description 25
- 238000000151 deposition Methods 0.000 description 19
- 230000008021 deposition Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 10
- 239000000872 buffer Substances 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000001994 activation Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 210000002381 plasma Anatomy 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 235000021317 phosphate Nutrition 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical class CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- QKNYBSVHEMOAJP-UHFFFAOYSA-N 2-amino-2-(hydroxymethyl)propane-1,3-diol;hydron;chloride Chemical group Cl.OCC(N)(CO)CO QKNYBSVHEMOAJP-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 229960004106 citric acid Drugs 0.000 description 1
- 238000010954 commercial manufacturing process Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- INCUINAMXODGFA-UHFFFAOYSA-N copper nitric acid Chemical compound [Cu].[Cu].[N+](=O)(O)[O-] INCUINAMXODGFA-UHFFFAOYSA-N 0.000 description 1
- SDFNZYMSEOUVIF-UHFFFAOYSA-N copper;methanesulfonic acid Chemical compound [Cu].CS(O)(=O)=O SDFNZYMSEOUVIF-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- CDMADVZSLOHIFP-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane;decahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.[Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 CDMADVZSLOHIFP-UHFFFAOYSA-N 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000008363 phosphate buffer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 229940074439 potassium sodium tartrate Drugs 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229960001367 tartaric acid Drugs 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76868—Forming or treating discontinuous thin films, e.g. repair, enhancement or reinforcement of discontinuous thin films
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
거리 | 웨이퍼 A (콘트롤) | 웨이퍼 B (비교예 1) | 웨이퍼 C (본 발명) | 웨이퍼 D (비교예 2) |
1 | 122.4 | 774.6 | 263.7 | 303.5 |
2 | 190.3 | 928.6 | 299.0 | 362.4 |
3 | 312.7 | 747.5 | 344.3 | 471.0 |
4 | 507.4 | - | 340.0 | 607.0 |
5 | 634.2 | 1042 | 321.6 | 684.0 |
Claims (15)
- 기판상에 놓인 금속 시드층을 산성 전해조에 접촉시키는 단계 및 상기 조를 0.1A/㎠ 이하 범위의 전류밀도로 인가시키는 단계(여기에서, 산성 전해조는 하나 이상의 산, 하나 이상의 구리 화합물, 하나 이상의 억압제(suppressor) 및 물을 포함하고, 또한 촉진제(accelerator)를 포함하지 않음)를 포함하는, 기판상에 불연속성개소가 실질적으로 없는 금속 시드층을 제공하는 방법.
- 제 1항에 있어서, 하나 이상의 산은, 황산, 아세트산, 플루오로붕산, 질산, 알칸설폰산, 아릴설폰산 또는 설팜산을 포함하는 방법.
- 제 1항에 있어서, 하나 이상의 구리 화합물은, 황산구리, 과황산구리, 할로겐화구리, 염소산구리, 과염소산구리, 알칸설폰산 구리, 알카놀설폰산 구리, 플루오로붕산구리, 질산제이구리 또는 아세트산구리를 포함하는 방법.
- 제 1항에 있어서, 하나 이상의 구리 화합물은, 구리 금속이 5 내지 75 g/L의 범위로 존재하는 방법.
- 제 1항에 있어서, 하나 이상의 억압제는, 아민; 폴리옥시알킬렌 아민 및 알카놀 아민; 아미드; 폴리-글리콜 타입 습윤제; 고분자량의 폴리에테르; 폴리에틸렌 옥사이드; 폴리옥시알킬렌 블록 공중합체; 알킬폴리에테르 설포네이트; 알콕시화 디아민; 및 제1구리 또는 제2구리 이온용 착화제를 포함하는 방법.
- 제 5항에 있어서, 하나 이상의 억압제는, EO/PO 블록 공중합체; 12몰의 EO를 갖는 에톡시화 폴리스티레네이트 페놀, 5몰의 EO를 갖는 에톡시화 부탄올, 16몰의 EO를 갖는 에톡시화 부탄올, 8몰의 EO를 갖는 에톡시화 부탄올, 12몰의 EO를 갖는 에톡시화 옥타놀, 13몰의 EO를 갖는 에톡시화 베타-나프톨, 10몰의 EO를 갖는 에톡시화 비스페놀 A, 30몰의 EO를 갖는 에톡시화 설페이티드 비스페놀 A 및 8몰의 EO를 갖는 에톡시화 비스페놀 A로부터 선택되는 방법.
- 제 1항에 있어서, 하나 이상의 억압제가 0.001 내지 10 g/L 범위의 양으로 존재하는 방법.
- 기판상에 놓인 금속 시드층을 pH가 6.5 내지 13의 범위로 유지된 수용액에 접촉시키는 단계, 그 용액에 0.1 내지 5볼트의 전압을 인가하는 단계, 기판을 제거하는 단계, 상기 기판상에 놓인 금속 시드층을 임의로 세척하는 단계, 금속 시드층을 산성 전해조에 접촉시키는 단계 및 상기 산성 전해조를 0.1A/㎠ 이하 범위의 전류밀도로 인가시키는 단계(여기에서, 산성 전해조는 하나 이상의 산, 하나 이상의 구리 화합물, 하나 이상의 억압제(suppressor) 및 물을 포함하고, 또한 촉진제를 포함하지 않음)를 포함하는, 기판상에 금속 산화물 및 불연속성개소가 실질적으로 없는 금속 시드층을 제공하는 방법.
- 제 8항에 있어서, 시드층이 구리 또는 구리 합금을 포함하는 방법.
- 하나 이상의 산;구리 금속이 5 내지 75 g/L 범위의 양인, 하나 이상의 구리 화합물;0.001 내지 10 g/L 범위의 양인, 하나 이상의 억압제; 및물;을 포함하고 상기 조가 실질적으로 촉진제를 포함하지 않는, 기판상에 놓인 금속 시드층내의 불연속성개소를 실질적으로 보수하기 위한 도금조 조성물.
- 삭제
- 삭제
- a) 기판을 장벽층으로 임의로 코팅하는 단계, b) 기판 표면의 금속 시드층을 제공하는 단계, c) 금속 시드층을 산성 전해조에 접촉시키는 단계 및 상기 조를 0.1A/㎠ 이하 범위의 전류밀도로 인가시키는 단계(여기에서, 산성 전해조는 하나 이상의 산, 하나 이상의 구리 화합물, 하나 이상의 억압제(suppressor) 및 물을 포함하고, 또한 촉진제(accelerator)를 포함하지 않음)를 포함하는, 금속 시드층내의 불연속성개소를 실질적으로 보수함으로써 금속 시드층을 보수하는 단계, d) 상기 보수된 금속 시드층을 금속 도금조에 보내서 기판상에 놓인 금속화 층을 제공하는 단계; 및 e) 기판상에 놓인 상기 금속화 층을 임의로 세척하는 단계를 포함하는, 기판상에 놓인 금속화 층을 제공하는 방법.
- 제 13항에 있어서, 금속 시드층을 pH가 6.5 내지 13의 범위로 유지된 수용액에 접촉시키고, 단계 d) 이전에 그 용액을 0.1 내지 5 볼트의 전압으로 인가시키는 것을 포함하는, 금속 시드층의 표면으로부터 금속 산화물을 제거하는 단계를 추가로 포함하는 방법.
- 제 13항의 방법에 따라 증착된 금속화 층을 갖는 기판.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17099899P | 1999-12-15 | 1999-12-15 | |
US60/170,998 | 1999-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010062419A KR20010062419A (ko) | 2001-07-07 |
KR100760337B1 true KR100760337B1 (ko) | 2007-09-20 |
Family
ID=22622121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000076361A KR100760337B1 (ko) | 1999-12-15 | 2000-12-14 | 시드층 보수방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6531046B2 (ko) |
EP (1) | EP1111096A3 (ko) |
JP (1) | JP4598945B2 (ko) |
KR (1) | KR100760337B1 (ko) |
TW (1) | TW589413B (ko) |
Families Citing this family (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6565729B2 (en) * | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
US6197181B1 (en) * | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
TW593731B (en) * | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
US20060157355A1 (en) * | 2000-03-21 | 2006-07-20 | Semitool, Inc. | Electrolytic process using anion permeable barrier |
US8236159B2 (en) | 1999-04-13 | 2012-08-07 | Applied Materials Inc. | Electrolytic process using cation permeable barrier |
US8852417B2 (en) | 1999-04-13 | 2014-10-07 | Applied Materials, Inc. | Electrolytic process using anion permeable barrier |
US20060189129A1 (en) * | 2000-03-21 | 2006-08-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using ion permeable barriers |
US6491806B1 (en) | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
US20050006245A1 (en) * | 2003-07-08 | 2005-01-13 | Applied Materials, Inc. | Multiple-step electrodeposition process for direct copper plating on barrier metals |
US20050109627A1 (en) * | 2003-10-10 | 2005-05-26 | Applied Materials, Inc. | Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features |
US6679983B2 (en) * | 2000-10-13 | 2004-01-20 | Shipley Company, L.L.C. | Method of electrodepositing copper |
US20020074242A1 (en) * | 2000-10-13 | 2002-06-20 | Shipley Company, L.L.C. | Seed layer recovery |
US6660153B2 (en) * | 2000-10-20 | 2003-12-09 | Shipley Company, L.L.C. | Seed layer repair bath |
US6660154B2 (en) | 2000-10-25 | 2003-12-09 | Shipley Company, L.L.C. | Seed layer |
US6797146B2 (en) * | 2000-11-02 | 2004-09-28 | Shipley Company, L.L.C. | Seed layer repair |
KR100400765B1 (ko) * | 2000-11-13 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | 박막 형성방법 및 이를 적용한 액정표시소자의 제조방법 |
US6554914B1 (en) * | 2001-02-02 | 2003-04-29 | Novellus Systems, Inc. | Passivation of copper in dual damascene metalization |
US7186648B1 (en) | 2001-03-13 | 2007-03-06 | Novellus Systems, Inc. | Barrier first method for single damascene trench applications |
US7781327B1 (en) | 2001-03-13 | 2010-08-24 | Novellus Systems, Inc. | Resputtering process for eliminating dielectric damage |
US8043484B1 (en) | 2001-03-13 | 2011-10-25 | Novellus Systems, Inc. | Methods and apparatus for resputtering process that improves barrier coverage |
US6764940B1 (en) | 2001-03-13 | 2004-07-20 | Novellus Systems, Inc. | Method for depositing a diffusion barrier for copper interconnect applications |
WO2003060959A2 (en) * | 2002-01-10 | 2003-07-24 | Semitool, Inc. | Method for applying metal features onto barrier layers using electrochemical deposition |
US6849173B1 (en) * | 2002-06-12 | 2005-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Technique to enhance the yield of copper interconnections |
US7025866B2 (en) | 2002-08-21 | 2006-04-11 | Micron Technology, Inc. | Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces |
TW200417628A (en) * | 2002-09-09 | 2004-09-16 | Shipley Co Llc | Improved cleaning composition |
US7105082B2 (en) * | 2003-02-27 | 2006-09-12 | Novellus Systems, Inc. | Composition and method for electrodeposition of metal on a work piece |
US7842605B1 (en) | 2003-04-11 | 2010-11-30 | Novellus Systems, Inc. | Atomic layer profiling of diffusion barrier and metal seed layers |
US8298933B2 (en) * | 2003-04-11 | 2012-10-30 | Novellus Systems, Inc. | Conformal films on semiconductor substrates |
JP2004346422A (ja) * | 2003-05-23 | 2004-12-09 | Rohm & Haas Electronic Materials Llc | めっき方法 |
US20060283716A1 (en) * | 2003-07-08 | 2006-12-21 | Hooman Hafezi | Method of direct plating of copper on a ruthenium alloy |
US20050092611A1 (en) * | 2003-11-03 | 2005-05-05 | Semitool, Inc. | Bath and method for high rate copper deposition |
US7128821B2 (en) * | 2004-01-20 | 2006-10-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electropolishing method for removing particles from wafer surface |
US20050211564A1 (en) * | 2004-03-29 | 2005-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and composition to enhance wetting of ECP electrolyte to copper seed |
KR100712548B1 (ko) * | 2006-01-27 | 2007-05-02 | 삼성전자주식회사 | 부양된 메탈라인을 갖는 웨이퍼 레벨 패키지 및 그 제조방법 |
DE102006022443A1 (de) * | 2006-05-13 | 2007-11-15 | Conti Temic Microelectronic Gmbh | Verfahren zur Herstellung einer Trägerplatte für eine Schaltungsanordnung, Trägerplatte, hergestellt nach einem derartigen Verfahren sowie Schaltungsanordnung mit einer derartigen Trägerplatte |
US7645696B1 (en) | 2006-06-22 | 2010-01-12 | Novellus Systems, Inc. | Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer |
US7855147B1 (en) | 2006-06-22 | 2010-12-21 | Novellus Systems, Inc. | Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer |
US7510634B1 (en) | 2006-11-10 | 2009-03-31 | Novellus Systems, Inc. | Apparatus and methods for deposition and/or etch selectivity |
US7682966B1 (en) | 2007-02-01 | 2010-03-23 | Novellus Systems, Inc. | Multistep method of depositing metal seed layers |
US20080264774A1 (en) * | 2007-04-25 | 2008-10-30 | Semitool, Inc. | Method for electrochemically depositing metal onto a microelectronic workpiece |
US7922880B1 (en) | 2007-05-24 | 2011-04-12 | Novellus Systems, Inc. | Method and apparatus for increasing local plasma density in magnetically confined plasma |
US7897516B1 (en) | 2007-05-24 | 2011-03-01 | Novellus Systems, Inc. | Use of ultra-high magnetic fields in resputter and plasma etching |
US7659197B1 (en) | 2007-09-21 | 2010-02-09 | Novellus Systems, Inc. | Selective resputtering of metal seed layers |
US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
KR100924865B1 (ko) * | 2007-12-27 | 2009-11-02 | 주식회사 동부하이텍 | 반도체 소자의 금속배선 형성방법 |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
JP2009228078A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Ltd | 電解メッキ液、電解メッキ方法、および半導体装置の製造方法 |
US8017523B1 (en) | 2008-05-16 | 2011-09-13 | Novellus Systems, Inc. | Deposition of doped copper seed layers having improved reliability |
US20120028073A1 (en) | 2009-02-12 | 2012-02-02 | Technion Research & Development Foundation Ltd. | Process for electroplating of copper |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US20110094888A1 (en) * | 2009-10-26 | 2011-04-28 | Headway Technologies, Inc. | Rejuvenation method for ruthenium plating seed |
KR20200131909A (ko) * | 2018-04-09 | 2020-11-24 | 램 리써치 코포레이션 | 비-구리 라이너 층들 상의 구리 전기충진 (electrofill) |
CN109112580A (zh) * | 2018-09-18 | 2019-01-01 | 苏州昕皓新材料科技有限公司 | 一种具有热力学各向异性的金属材料及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4374709A (en) * | 1980-05-01 | 1983-02-22 | Occidental Chemical Corporation | Process for plating polymeric substrates |
KR960020642A (ko) * | 1994-11-21 | 1996-06-17 | 윌리엄 티. 엘리스 | 선택적으로 충진된 도금 스루 홀을 구비하는 인쇄 회로 기판 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3841979A (en) * | 1971-08-20 | 1974-10-15 | M & T Chemicals Inc | Method of preparing surfaces for electroplating |
US5004525A (en) * | 1988-08-23 | 1991-04-02 | Shipley Company Inc. | Copper electroplating composition |
JPH06349952A (ja) * | 1993-06-14 | 1994-12-22 | Oki Electric Ind Co Ltd | 配線形成方法 |
US5824599A (en) | 1996-01-16 | 1998-10-20 | Cornell Research Foundation, Inc. | Protected encapsulation of catalytic layer for electroless copper interconnect |
US5882498A (en) * | 1997-10-16 | 1999-03-16 | Advanced Micro Devices, Inc. | Method for reducing oxidation of electroplating chamber contacts and improving uniform electroplating of a substrate |
TW593731B (en) | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
JP3836252B2 (ja) * | 1998-04-30 | 2006-10-25 | 株式会社荏原製作所 | 基板のめっき方法 |
JP3904328B2 (ja) * | 1998-04-30 | 2007-04-11 | 株式会社荏原製作所 | 基板のめっき方法 |
JP3694594B2 (ja) * | 1998-09-03 | 2005-09-14 | 株式会社荏原製作所 | 微細孔および/または微細溝を有する基材の孔埋めめっき方法 |
TW436990B (en) * | 1998-11-24 | 2001-05-28 | Motorola Inc | Process for forming a semiconductor device |
EP1197587B1 (en) * | 2000-10-13 | 2006-09-20 | Shipley Co. L.L.C. | Seed layer repair and electroplating bath |
-
2000
- 2000-12-14 KR KR1020000076361A patent/KR100760337B1/ko active IP Right Grant
- 2000-12-14 EP EP00311213A patent/EP1111096A3/en not_active Withdrawn
- 2000-12-15 JP JP2000382506A patent/JP4598945B2/ja not_active Expired - Fee Related
- 2000-12-15 US US09/738,551 patent/US6531046B2/en not_active Expired - Lifetime
-
2001
- 2001-01-30 TW TW089126886A patent/TW589413B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4374709A (en) * | 1980-05-01 | 1983-02-22 | Occidental Chemical Corporation | Process for plating polymeric substrates |
KR960020642A (ko) * | 1994-11-21 | 1996-06-17 | 윌리엄 티. 엘리스 | 선택적으로 충진된 도금 스루 홀을 구비하는 인쇄 회로 기판 |
Also Published As
Publication number | Publication date |
---|---|
KR20010062419A (ko) | 2001-07-07 |
TW589413B (en) | 2004-06-01 |
US6531046B2 (en) | 2003-03-11 |
US20020000382A1 (en) | 2002-01-03 |
EP1111096A3 (en) | 2004-02-11 |
EP1111096A2 (en) | 2001-06-27 |
JP2001240995A (ja) | 2001-09-04 |
JP4598945B2 (ja) | 2010-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100760337B1 (ko) | 시드층 보수방법 | |
KR100618722B1 (ko) | 전착화학 | |
US6610192B1 (en) | Copper electroplating | |
US20060283716A1 (en) | Method of direct plating of copper on a ruthenium alloy | |
US20040217009A1 (en) | Electroplating bath | |
JP4116781B2 (ja) | シ−ド修復及び電解めっき浴 | |
US20070125657A1 (en) | Method of direct plating of copper on a substrate structure | |
US20060213780A1 (en) | Electroplating composition and method | |
EP3080340B1 (en) | Copper electrodeposition bath containing an electrochemically inert cation | |
US20210262105A1 (en) | Acidic aqueous composition for electrolytic copper plating | |
KR20080100223A (ko) | 마이크로 전자공학에서의 구리 전착 | |
US20020074242A1 (en) | Seed layer recovery | |
KR20180103864A (ko) | 수성 인듐 또는 인듐 합금 도금 욕조 및 인듐 또는 인듐 합금의 침착을 위한 방법 | |
EP1477588A1 (en) | Copper Electroplating composition for wafers | |
US20020090484A1 (en) | Plating bath | |
JP4416979B2 (ja) | 銅電気メッキに用いるメッキ溶液 | |
US20050109627A1 (en) | Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features | |
EP1148156A2 (en) | Copper Electroplating | |
US6872295B2 (en) | Method for preparing an electroplating bath and related copper plating process | |
JP7346738B2 (ja) | 滑らかなトポロジーのためのコバルト化学 | |
KR20230146586A (ko) | 전해질 및 코발트 전착 방법 | |
KR20070031373A (ko) | 배리어 금속상에 직접 구리를 도금할 수 있도록 배리어 층표면을 처리하는 방법 | |
TW200415261A (en) | Electrolytic solution for copper plating |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20120821 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130820 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140826 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150819 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160818 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170818 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180816 Year of fee payment: 12 |