KR100755655B1 - 칩 형 콘덴서 - Google Patents
칩 형 콘덴서 Download PDFInfo
- Publication number
- KR100755655B1 KR100755655B1 KR1020060049779A KR20060049779A KR100755655B1 KR 100755655 B1 KR100755655 B1 KR 100755655B1 KR 1020060049779 A KR1020060049779 A KR 1020060049779A KR 20060049779 A KR20060049779 A KR 20060049779A KR 100755655 B1 KR100755655 B1 KR 100755655B1
- Authority
- KR
- South Korea
- Prior art keywords
- lead
- anode
- cathode
- capacitor
- chip
- Prior art date
Links
- 238000003466 welding Methods 0.000 claims abstract description 9
- 239000003990 capacitor Substances 0.000 claims description 64
- 230000002787 reinforcement Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 8
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WABPQHHGFIMREM-AKLPVKDBSA-N lead-210 Chemical compound [210Pb] WABPQHHGFIMREM-AKLPVKDBSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/08—Housing; Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (3)
- 소형화를 이루면서 구조적인 안전성을 유지할 수 있는 칩 형 콘덴서에 있어서,외 표면에 음극 층을 형성하고, 일측으로는 양극 와이어가 돌출한 콘덴서 소자;상기 음극 층에 전기적으로 연결되는 음극 리드;상기 양극 와이어에 용접 보강재를 통하여 전기적으로 연결되는 양극 리드;상기 음극 리드와 양극 리드의 일부분만을 노출시키도록 상기 콘덴서 소자를 피복하는 몰드 부; 및상기 음극 리드와 양극 리드의 측방향으로 돌출하고 그 하부측으로 단턱을 형성하는 돌출부;를 포함하는 것을 특징으로 하는 칩 형 콘덴서.
- 제1항에 있어서,상기 돌출부는 상기 음극 리드의 길이 방향 및 폭 방향으로 확대된 단턱을 형성하는 것임을 특징으로 하는 칩 형 콘덴서.
- 제1항에 있어서,상기 돌출부는 상기 양극 리드의 길이 방향 및 폭 방향으로 확대된 단턱을 형성하는 것임을 특징으로 하는 칩 형 콘덴서.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060049779A KR100755655B1 (ko) | 2006-06-02 | 2006-06-02 | 칩 형 콘덴서 |
US11/806,560 US20070279841A1 (en) | 2006-06-02 | 2007-06-01 | Chip capacitor |
JP2007147151A JP2007324602A (ja) | 2006-06-02 | 2007-06-01 | チップ型コンデンサ |
CN2007101089277A CN101083173B (zh) | 2006-06-02 | 2007-06-04 | 片状电容器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060049779A KR100755655B1 (ko) | 2006-06-02 | 2006-06-02 | 칩 형 콘덴서 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100755655B1 true KR100755655B1 (ko) | 2007-09-04 |
Family
ID=38736561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060049779A KR100755655B1 (ko) | 2006-06-02 | 2006-06-02 | 칩 형 콘덴서 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20070279841A1 (ko) |
JP (1) | JP2007324602A (ko) |
KR (1) | KR100755655B1 (ko) |
CN (1) | CN101083173B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101132059B1 (ko) | 2007-11-20 | 2012-04-02 | 산요덴키가부시키가이샤 | 고체 전해 컨덴서 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101536127B (zh) * | 2006-09-25 | 2011-09-14 | 株式会社村田制作所 | 固体电解电容器用基材、使用其的电容器、以及该电容器的制造方法 |
CN101932529B (zh) * | 2007-11-13 | 2015-11-25 | 沃尔蒂有限公司 | 净水装置 |
JP4868601B2 (ja) * | 2007-12-05 | 2012-02-01 | Necトーキン株式会社 | 固体電解コンデンサ及びその製造方法 |
JP5020052B2 (ja) * | 2007-12-19 | 2012-09-05 | 三洋電機株式会社 | 固体電解コンデンサ |
JP2009170897A (ja) * | 2007-12-21 | 2009-07-30 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
KR100914891B1 (ko) * | 2007-12-21 | 2009-08-31 | 삼성전기주식회사 | 고체 전해 콘덴서 및 그 제조방법 |
JP2009164412A (ja) * | 2008-01-08 | 2009-07-23 | Kobe Steel Ltd | 多孔質金属薄膜およびその製造方法、ならびにコンデンサ |
CN100528418C (zh) * | 2008-01-11 | 2009-08-19 | 宁夏东方钽业股份有限公司 | 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极 |
US8062385B2 (en) * | 2008-02-12 | 2011-11-22 | Kemet Electronics Corporation | Solid electrolytic capacitor with improved volumetric efficiency method of making |
JP5132374B2 (ja) * | 2008-03-18 | 2013-01-30 | 三洋電機株式会社 | 固体電解コンデンサ及びその製造方法 |
KR101009850B1 (ko) * | 2008-06-17 | 2011-01-19 | 삼성전기주식회사 | 고체 전해 콘덴서 및 그 제조방법 |
KR101067210B1 (ko) * | 2008-12-08 | 2011-09-22 | 삼성전기주식회사 | 고체 전해 콘덴서 |
US8345406B2 (en) * | 2009-03-23 | 2013-01-01 | Avx Corporation | Electric double layer capacitor |
JP2011049347A (ja) * | 2009-08-27 | 2011-03-10 | Sanyo Electric Co Ltd | 固体電解コンデンサ及びその製造方法 |
TWI421888B (zh) * | 2010-03-05 | 2014-01-01 | Apaq Technology Co Ltd | 具有多端產品引出腳之堆疊式固態電解電容器 |
KR20150049918A (ko) | 2013-10-31 | 2015-05-08 | 삼성전기주식회사 | 탄탈륨 캐패시터 및 그 제조 방법 |
JP7067512B2 (ja) * | 2019-03-22 | 2022-05-16 | 株式会社村田製作所 | 固体電解コンデンサ |
JP7408288B2 (ja) | 2019-03-22 | 2024-01-05 | 株式会社村田製作所 | 固体電解コンデンサ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358038A (ja) | 2000-06-12 | 2001-12-26 | Rohm Co Ltd | タンタル電解コンデンサの製造方法 |
KR20040068471A (ko) * | 2003-01-24 | 2004-07-31 | 엔이씨 도낀 가부시끼가이샤 | 작은 크기와 단순한 구조를 갖는 칩 타입 고체 전해질커패시터 |
JP2006108539A (ja) | 2004-10-08 | 2006-04-20 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3312246B2 (ja) * | 1999-06-18 | 2002-08-05 | 松尾電機株式会社 | チップコンデンサの製造方法 |
JP2001006978A (ja) * | 1999-06-18 | 2001-01-12 | Matsuo Electric Co Ltd | チップコンデンサ |
US6625009B2 (en) * | 2001-04-05 | 2003-09-23 | Rohm Co., Ltd. | Solid electrolytic capacitor and method of making the same |
JP4201721B2 (ja) * | 2003-09-05 | 2008-12-24 | 三洋電機株式会社 | 固体電解コンデンサ |
JP2006286939A (ja) * | 2005-03-31 | 2006-10-19 | Sanyo Electric Co Ltd | 固体電解コンデンサ及びその製造方法 |
US20060256506A1 (en) * | 2005-04-27 | 2006-11-16 | Showa Denko K.K. | Solid electrolyte capacitor and process for producing same |
KR100826391B1 (ko) * | 2006-07-18 | 2008-05-02 | 삼성전기주식회사 | 칩형 고체 전해콘덴서 |
-
2006
- 2006-06-02 KR KR1020060049779A patent/KR100755655B1/ko active IP Right Grant
-
2007
- 2007-06-01 US US11/806,560 patent/US20070279841A1/en not_active Abandoned
- 2007-06-01 JP JP2007147151A patent/JP2007324602A/ja active Pending
- 2007-06-04 CN CN2007101089277A patent/CN101083173B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001358038A (ja) | 2000-06-12 | 2001-12-26 | Rohm Co Ltd | タンタル電解コンデンサの製造方法 |
KR20040068471A (ko) * | 2003-01-24 | 2004-07-31 | 엔이씨 도낀 가부시끼가이샤 | 작은 크기와 단순한 구조를 갖는 칩 타입 고체 전해질커패시터 |
JP2006108539A (ja) | 2004-10-08 | 2006-04-20 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101132059B1 (ko) | 2007-11-20 | 2012-04-02 | 산요덴키가부시키가이샤 | 고체 전해 컨덴서 |
US8149569B2 (en) | 2007-11-20 | 2012-04-03 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor with cathode terminal and anode terminal |
US8456804B2 (en) | 2007-11-20 | 2013-06-04 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor with cathode terminal and anode terminal |
KR101283069B1 (ko) | 2007-11-20 | 2013-07-05 | 산요덴키가부시키가이샤 | 고체 전해 컨덴서 |
Also Published As
Publication number | Publication date |
---|---|
JP2007324602A (ja) | 2007-12-13 |
CN101083173B (zh) | 2012-05-09 |
CN101083173A (zh) | 2007-12-05 |
US20070279841A1 (en) | 2007-12-06 |
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