KR100753692B1 - 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법 - Google Patents

가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법 Download PDF

Info

Publication number
KR100753692B1
KR100753692B1 KR1020050119216A KR20050119216A KR100753692B1 KR 100753692 B1 KR100753692 B1 KR 100753692B1 KR 1020050119216 A KR1020050119216 A KR 1020050119216A KR 20050119216 A KR20050119216 A KR 20050119216A KR 100753692 B1 KR100753692 B1 KR 100753692B1
Authority
KR
South Korea
Prior art keywords
gas
mixed
gas supply
pipe
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050119216A
Other languages
English (en)
Korean (ko)
Other versions
KR20060065510A (ko
Inventor
게네쯔 미즈사와
게이키 이토
마사히데 이토
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20060065510A publication Critical patent/KR20060065510A/ko
Application granted granted Critical
Publication of KR100753692B1 publication Critical patent/KR100753692B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020050119216A 2004-12-09 2005-12-08 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법 Expired - Fee Related KR100753692B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004357292A JP4358727B2 (ja) 2004-12-09 2004-12-09 ガス供給装置，基板処理装置及び供給ガス設定方法
JPJP-P-2004-00357292 2004-12-09

Publications (2)

Publication Number Publication Date
KR20060065510A KR20060065510A (ko) 2006-06-14
KR100753692B1 true KR100753692B1 (ko) 2007-08-30

Family

ID=36667053

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050119216A Expired - Fee Related KR100753692B1 (ko) 2004-12-09 2005-12-08 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법

Country Status (4)

Country Link
JP (1) JP4358727B2 (https=)
KR (1) KR100753692B1 (https=)
CN (1) CN100390933C (https=)
TW (1) TWI441254B (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4550507B2 (ja) 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
US20080078746A1 (en) 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
JP5211450B2 (ja) * 2006-08-15 2013-06-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
JP5452133B2 (ja) * 2009-08-27 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5562712B2 (ja) * 2010-04-30 2014-07-30 東京エレクトロン株式会社 半導体製造装置用のガス供給装置
JP5689294B2 (ja) 2010-11-25 2015-03-25 東京エレクトロン株式会社 処理装置
JP5792563B2 (ja) 2011-08-31 2015-10-14 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2014003234A (ja) * 2012-06-20 2014-01-09 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
JP6034655B2 (ja) 2012-10-25 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置
JP6030994B2 (ja) 2013-05-15 2016-11-24 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
US9620417B2 (en) 2014-09-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method of manufacturing fin-FET devices
CN107771353B (zh) * 2015-05-17 2022-02-01 恩特格里斯公司 气柜
JP6502779B2 (ja) * 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
JP7073710B2 (ja) 2017-01-20 2022-05-24 東京エレクトロン株式会社 プラズマ処理装置
CH713539A1 (fr) * 2017-03-03 2018-09-14 Pelco Sarl Mélangeur de gaz automatique.
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置
WO2021146099A1 (en) 2020-01-13 2021-07-22 Lam Research Corporation Multizone gas distribution plate for trench profile optimization
JP7507065B2 (ja) * 2020-11-09 2024-06-27 東京エレクトロン株式会社 処理装置及び処理方法
JP7727528B2 (ja) * 2021-12-23 2025-08-21 東京エレクトロン株式会社 プラズマ処理装置
CN117198848A (zh) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 气体分配装置、等离子体处理装置及方法
CN114774887A (zh) * 2022-06-22 2022-07-22 拓荆科技(北京)有限公司 气体传输装置、方法和半导体沉积设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004085134A (ja) * 2002-08-28 2004-03-18 Kobe Steel Ltd 熱間等方圧加圧装置および熱間等方圧加圧方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136098A (ja) * 1991-11-15 1993-06-01 Seiko Epson Corp 半導体装置の製造装置及び半導体装置の製造方法
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JPH09289170A (ja) * 1996-04-23 1997-11-04 Sony Corp 半導体製造装置
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
CN1240113C (zh) * 2002-08-20 2006-02-01 东京毅力科创株式会社 等离子体蚀刻方法及装置
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004085134A (ja) * 2002-08-28 2004-03-18 Kobe Steel Ltd 熱間等方圧加圧装置および熱間等方圧加圧方法

Also Published As

Publication number Publication date
CN100390933C (zh) 2008-05-28
CN1787170A (zh) 2006-06-14
TWI441254B (zh) 2014-06-11
JP4358727B2 (ja) 2009-11-04
KR20060065510A (ko) 2006-06-14
TW200633049A (en) 2006-09-16
JP2006165399A (ja) 2006-06-22

Similar Documents

Publication Publication Date Title
KR100753692B1 (ko) 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법
US8906193B2 (en) Gas supply unit, substrate processing apparatus and supply gas setting method
JP4911984B2 (ja) ガス供給装置，基板処理装置，ガス供給方法及びシャワーヘッド
US8241514B2 (en) Plasma etching method and computer readable storage medium
JP4895167B2 (ja) ガス供給装置，基板処理装置，ガス供給方法
US9685305B2 (en) Plasma processing apparatus and plasma processing method
JP4460288B2 (ja) 基板処理装置及び電力分配方法
JP5600644B2 (ja) ワークピース製造装置
JP4393844B2 (ja) プラズマ成膜装置及びプラズマ成膜方法
US8261691B2 (en) Plasma processing apparatus
US9502219B2 (en) Plasma processing method
US20080230008A1 (en) Plasma species and uniformity control through pulsed vhf operation
WO2013088723A1 (ja) プラズマ処理装置
JPH1167737A (ja) プラズマ処理装置
KR20160102892A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
KR20200051505A (ko) 배치대 및 기판 처리 장치
JP4357487B2 (ja) ガス供給装置，基板処理装置，ガス供給方法
JP4410117B2 (ja) ガス設定方法，ガス設定装置，エッチング装置及び基板処理システム
KR101262904B1 (ko) 플라즈마 식각 장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120802

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130801

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140808

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150716

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160721

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170720

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230824

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230824

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000