JP4358727B2 - ガス供給装置，基板処理装置及び供給ガス設定方法 - Google Patents

ガス供給装置，基板処理装置及び供給ガス設定方法 Download PDF

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Publication number
JP4358727B2
JP4358727B2 JP2004357292A JP2004357292A JP4358727B2 JP 4358727 B2 JP4358727 B2 JP 4358727B2 JP 2004357292 A JP2004357292 A JP 2004357292A JP 2004357292 A JP2004357292 A JP 2004357292A JP 4358727 B2 JP4358727 B2 JP 4358727B2
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JP
Japan
Prior art keywords
gas
branch pipe
gas supply
pipe
additional gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004357292A
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English (en)
Japanese (ja)
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JP2006165399A5 (https=
JP2006165399A (ja
Inventor
兼悦 水澤
恵貴 伊藤
昌秀 伊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2004357292A priority Critical patent/JP4358727B2/ja
Priority to KR1020050119216A priority patent/KR100753692B1/ko
Priority to TW094143443A priority patent/TWI441254B/zh
Priority to US11/296,209 priority patent/US20060124169A1/en
Priority to CNB2005101303873A priority patent/CN100390933C/zh
Publication of JP2006165399A publication Critical patent/JP2006165399A/ja
Publication of JP2006165399A5 publication Critical patent/JP2006165399A5/ja
Application granted granted Critical
Publication of JP4358727B2 publication Critical patent/JP4358727B2/ja
Priority to US12/651,165 priority patent/US8906193B2/en
Priority to US13/691,125 priority patent/US9441791B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2004357292A 2004-12-09 2004-12-09 ガス供給装置，基板処理装置及び供給ガス設定方法 Expired - Fee Related JP4358727B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004357292A JP4358727B2 (ja) 2004-12-09 2004-12-09 ガス供給装置，基板処理装置及び供給ガス設定方法
TW094143443A TWI441254B (zh) 2004-12-09 2005-12-08 A gas supply device, a substrate processing device, and a supply gas setting method
US11/296,209 US20060124169A1 (en) 2004-12-09 2005-12-08 Gas supply unit, substrate processing apparatus, and supply gas setting method
KR1020050119216A KR100753692B1 (ko) 2004-12-09 2005-12-08 가스 공급 장치, 기판 처리 장치 및 공급 가스설정 방법
CNB2005101303873A CN100390933C (zh) 2004-12-09 2005-12-09 气体供给装置、基板处理装置及供给气体设定方法
US12/651,165 US8906193B2 (en) 2004-12-09 2009-12-31 Gas supply unit, substrate processing apparatus and supply gas setting method
US13/691,125 US9441791B2 (en) 2004-12-09 2012-11-30 Gas supply unit, substrate processing apparatus and supply gas setting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004357292A JP4358727B2 (ja) 2004-12-09 2004-12-09 ガス供給装置，基板処理装置及び供給ガス設定方法

Publications (3)

Publication Number Publication Date
JP2006165399A JP2006165399A (ja) 2006-06-22
JP2006165399A5 JP2006165399A5 (https=) 2008-01-31
JP4358727B2 true JP4358727B2 (ja) 2009-11-04

Family

ID=36667053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004357292A Expired - Fee Related JP4358727B2 (ja) 2004-12-09 2004-12-09 ガス供給装置，基板処理装置及び供給ガス設定方法

Country Status (4)

Country Link
JP (1) JP4358727B2 (https=)
KR (1) KR100753692B1 (https=)
CN (1) CN100390933C (https=)
TW (1) TWI441254B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160009542A (ko) 2013-05-15 2016-01-26 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 장치 및 플라즈마 에칭 방법
US9349619B2 (en) 2011-08-31 2016-05-24 Tokyo Electron Limited Plasma etching method and plasma etching apparatus
KR20180086151A (ko) 2017-01-20 2018-07-30 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4550507B2 (ja) 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4895167B2 (ja) * 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
US20080078746A1 (en) 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
JP5211450B2 (ja) * 2006-08-15 2013-06-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
JP5378706B2 (ja) * 2008-05-22 2013-12-25 東京エレクトロン株式会社 プラズマ処理装置及びそれに用いられる処理ガス供給装置
JP5452133B2 (ja) * 2009-08-27 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP5562712B2 (ja) * 2010-04-30 2014-07-30 東京エレクトロン株式会社 半導体製造装置用のガス供給装置
JP5689294B2 (ja) 2010-11-25 2015-03-25 東京エレクトロン株式会社 処理装置
JP2014003234A (ja) * 2012-06-20 2014-01-09 Tokyo Electron Ltd プラズマ処理装置、及びプラズマ処理方法
JP6034655B2 (ja) 2012-10-25 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置
US9620417B2 (en) 2014-09-30 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method of manufacturing fin-FET devices
CN107771353B (zh) * 2015-05-17 2022-02-01 恩特格里斯公司 气柜
JP6502779B2 (ja) * 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
CH713539A1 (fr) * 2017-03-03 2018-09-14 Pelco Sarl Mélangeur de gaz automatique.
JP7296854B2 (ja) * 2019-11-07 2023-06-23 東京エレクトロン株式会社 ガス供給方法及び基板処理装置
WO2021146099A1 (en) 2020-01-13 2021-07-22 Lam Research Corporation Multizone gas distribution plate for trench profile optimization
JP7507065B2 (ja) * 2020-11-09 2024-06-27 東京エレクトロン株式会社 処理装置及び処理方法
JP7727528B2 (ja) * 2021-12-23 2025-08-21 東京エレクトロン株式会社 プラズマ処理装置
CN117198848A (zh) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 气体分配装置、等离子体处理装置及方法
CN114774887A (zh) * 2022-06-22 2022-07-22 拓荆科技(北京)有限公司 气体传输装置、方法和半导体沉积设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05136098A (ja) * 1991-11-15 1993-06-01 Seiko Epson Corp 半導体装置の製造装置及び半導体装置の製造方法
US5916369A (en) * 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
JPH09289170A (ja) * 1996-04-23 1997-11-04 Sony Corp 半導体製造装置
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
CN1240113C (zh) * 2002-08-20 2006-02-01 东京毅力科创株式会社 等离子体蚀刻方法及装置
JP4127779B2 (ja) * 2002-08-28 2008-07-30 株式会社神戸製鋼所 熱間等方圧加圧装置および熱間等方圧加圧方法
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349619B2 (en) 2011-08-31 2016-05-24 Tokyo Electron Limited Plasma etching method and plasma etching apparatus
US9887109B2 (en) 2011-08-31 2018-02-06 Tokyo Electron Limited Plasma etching method and plasma etching apparatus
KR20160009542A (ko) 2013-05-15 2016-01-26 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 장치 및 플라즈마 에칭 방법
US9583315B2 (en) 2013-05-15 2017-02-28 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
KR20180086151A (ko) 2017-01-20 2018-07-30 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치

Also Published As

Publication number Publication date
CN100390933C (zh) 2008-05-28
CN1787170A (zh) 2006-06-14
TWI441254B (zh) 2014-06-11
KR20060065510A (ko) 2006-06-14
TW200633049A (en) 2006-09-16
KR100753692B1 (ko) 2007-08-30
JP2006165399A (ja) 2006-06-22

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